Titanium-nitride removal
A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present invention decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.
1. A method of removing a metallic hard mask and etching residues from a microelectronic device comprising steps of:
providing a material stack of from, bottom to top, a dielectric capping layer, an interlevel dielectric, a dielectric hard mask, a metallic hard mask, and a patterned photoresist having at least one opening that exposes a portion of the upper surface of said metallic hard mask;
transferring the at least one opening into said metallic hard mask, stopping on said dielectric hard mask by etching, wherein during said etching an entirety of said patterned photoresist is removed, while maintaining metallic hard mask portions on said dielectric hard mask;
extending said at least one opening through said dielectric hard mask, into said interlevel dielectric material and stopping on said dielectric capping layer by a reactive ion etching process (RIE);
applying a wet chemical composition removing at least a portion of said metallic hard mask portions from a topmost surface of said dielectric hard mask layer, said chemical composition comprising an oxidizing agent selected from the group consisting of peroxides and oxidants, a pH controlling agent selected from the group consisting of quaternary ammonium salts and quaternary ammonium alkali, and an aqueous solution, wherein the composition has a pH in the range of about 7 to about 14; and
etching the material stack to open the dielectric capping layer above a copper device layer for filling the at least one opening.
2. The method of claim 1 , wherein the wet chemical composition removes an entirety of said metallic hard mask portions selective to the dielectric hard mask by applying the composition in a range from about 1 minute to about 5 minutes at a temperature in the range of about 25° C. to about 80° C.
3. The method of claim 2 , wherein the wet chemical composition is applied for about 2 minutes at a temperature of about 60° C.
4. The method of claim 2 , wherein the wet chemical composition is applied for about 4 minutes at a temperature of about 60° C.
5. The method of claim 1 , wherein the wet chemical composition partially removes said metallic hard mask portions selective to the dielectric hard mask by applying the composition in a range from about 1 minute to about 2 minutes at a temperature of about 60° C.
6. A method of removing a metallic hard mask and etching residues from a microelectronic device comprising steps of:
providing a material stack of from, bottom to top, an interlevel dielectric, a dielectric hard mask, a metallic hard mask, and a patterned photoresist having at least one opening that exposes a portion of the upper surface of said metallic hard mask;
transferring the at least one opening into said metallic hard mask, stopping on said dielectric hard mask by etching, wherein during said etching an entirety of said patterned photoresist is removed, while maintaining metallic hard mask portions on said dielectric hard mask;
extending said at least one opening through said dielectric hard mask and into said interlevel dielectric material by a reactive ion etching process (RIE); and
applying a wet chemical composition removing at least a portion of said metallic hard mask portions from a topmost surface of said dielectric hard mask, said chemical composition comprising an oxidizing agent selected from the group consisting of peroxides and oxidants, a pH controlling agent selected from the group consisting of quaternary ammonium salts and quaternary ammonium alkali, and an aqueous solution, wherein the composition has a pH in the range of about 7 to about 14.
7. The method of claim 6 , wherein the wet chemical composition removes an entirety of said metallic hard mask portions selective to the dielectric hard mask by applying the composition in a range from about 1 minute to about 5 minutes at a temperature in the range of about 25° C. to about 80° C.
8. The method of claim 7 , wherein the wet chemical composition is applied for about 2 minutes at a temperature of about 60° C.
9. The method of claim 7 , wherein the wet chemical composition is applied for about 4 minutes at a temperature of about 60° C.
10. The method of claim 6 , wherein the wet chemical composition partially removes said metallic hard mask portions selective to the dielectric hard mask by applying the composition in a range from about 1 minute to about 2 minutes at a temperature of about 60° C.
11. The method of claim 10 , further comprising etching the interconnect structure to further open material layers above an underlying copper device layer for filling the at least one opening.
12. The method of claim 6 , wherein said wet chemical composition is selected from the group consisting essentially of said oxidizing agent, said pH stabilizer agent, and said aqueous solution.
13. The method of claim 6 , wherein said peroxide is hydrogen peroxide.
14. The method of claim 6 , wherein said wet chemical composition comprises 1.9% of said oxidizing agent, 0.8% of said pH controlling agent, and 90.2% of said aqueous solution.
15. The method of claim 6 , wherein said wet chemical composition comprises 2.9% of said oxidizing agent, 0.8% of said pH controlling agent, 10 ppm of a sequestering agent, and the remainder said aqueous solution.
16. The method of claim 6 , wherein said wet chemical composition comprises 3.9% of said oxidizing agent, 0.8% of said pH controlling agent, 10 ppm of a sequestering agent, 100 ppm of a copper protectant and the remainder said aqueous solution.
17. A method of removing a metallic hard mask and etching residues from a microelectronic device comprising steps of:
providing a material stack of from, bottom to top, an interlevel dielectric, a dielectric hard mask, a metallic hard mask, and a patterned photoresist having at least one opening that exposes a portion of the upper surface of said metallic hard mask;
transferring the at least one opening into said metallic hard mask, stopping on said dielectric hard mask by etching, wherein during said etching an entirety of said patterned photoresist is removed, while maintaining metallic hard mask portions on said dielectric hard mask;
extending said at least one opening through said dielectric hard mask and into said interlevel dielectric material by a reactive ion etching process (RIE); and
applying a wet chemical composition removing at least a portion of said metallic hard mask portions from a topmost surface of said dielectric hard mask, said chemical composition consisting essentially of an oxidizing agent selected from the group consisting of a peroxide, a pH controlling agent selected from the group consisting of quaternary ammonium salts and quaternary ammonium alkali, and an aqueous solution, wherein the composition has a pH in the range of about 7 to about 14.
18. The method of claim 17 , wherein said wet chemical composition consists of said oxidizing agent, said pH controlling agent, and said aqueous solution.
19. The method of claim 18 , wherein said peroxide is hydrogen peroxide.
20. The method of claim 19 , wherein said wet chemical composition comprises 1.9% of said oxidizing agent, 0.8% of said pH controlling agent, and 90.2% of said aqueous solution.
21. The method of claim 17 , wherein said wet chemical composition comprises 2.9% of said oxidizing agent, 0.8% of said pH controlling agent, 10 ppm of a sequestering agent, and the remainder said aqueous solution.
22. The method of claim 17 , wherein said wet chemical composition comprises 3.9% of said oxidizing agent, 0.8% of said pH controlling agent, 10 ppm of a sequestering agent, 100 ppm of a copper protectant and the remainder said aqueous solution.