METHOD AND STRUCTURE FOR REWORKING ANTIREFLECTIVE COATING OVER SEMICONDUCTOR SUBSTRATE
A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
1 . A multilayer structure comprising:
a substrate having a material layer;
a planarization layer on the material layer;
an organic solvent soluble layer on the planarization layer; and
an ARC layer on the organic solvent soluble layer.
2 . The multilayer structure of claim 1 , wherein the material layer is an organic dielectric, a metal, a ceramic, or a semiconductor.
3 . The multilayer structure of claim 1 , further comprising:
a hardmask layer between the material layer and the planarization layer.
4 . The multilayer structure of claim 1 , further comprising:
a hardmask layer between the planarization layer and the organic solvent soluble layer.
5 . The multilayer structure of claim 1 , wherein the ARC layer is a silicon ARC layer.
6 . The multilayer structure of claim 1 , the organic solvent soluble layer comprises polysulfone, polyarylsulfone, polyethersulfone, polyimide, or polyarylether.
7 . The multilayer structure of claim 6 , wherein the thickness of the organic solvent soluble layer is in the range from about 20 nm to about 100 nm.
8 . A multilayer structure comprising:
a semiconductor substrate having a material layer and a hardmask layer on the material layer;
an organic solvent soluble layer on the hardmask layer;
a planarization layer on the organic solvent soluble layer; and
an ARC layer on the planarization layer.
9 . The multilayer structure of claim 8 , wherein the material layer is an organic dielectric, a metal, a ceramic, or a semiconductor.
10 . The multilayer structure of claim 8 , wherein the ARC layer is a silicon ARC layer.
11 . The multilayer structure of claim 8 , the organic solvent soluble layer comprises polysulfone, polyarylsulfone, polyethersulfone, polyimide, or polyarylether.
12 . The multilayer structure of claim 11 , wherein the thickness of the organic solvent soluble layer is in the range from about 20 nm to about 100 nm.