METHODS AND APPARATUS FOR METAL OXIDE REVERSIBLE RESISTANCE-SWITCHING MEMORY DEVICES
In some aspects, a memory cell is provided that includes a first conducting layer, a reversible resistance switching element above the first conducting layer, a second conducting layer above the reversible resistance switching element, and a liner disposed about a sidewall of the reversible resistance switching element. The reversible resistance switching element includes a first metal oxide material, and the liner includes the first metal oxide material. Numerous other aspects are provided.
1 . A memory cell comprising:
a first conducting layer;
a reversible resistance switching element above the first conducting layer;
a second conducting layer above the reversible resistance switching element; and
a liner disposed about a sidewall of the reversible resistance switching element,
wherein:
the reversible resistance switching element comprises a first metal oxide material, and
the liner comprises the first metal oxide material.
2 . The memory cell of claim 1 , wherein the first metal oxide material comprises one or more of HfO 2 , Al 2 O 3 , HfSiO x , HfSiO x N y , HfAlO x , Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , Cr 2 O 3 , Fe 2 O 3 , Ni 2 O 3 , Co 2 O 3 , WO 3 , TiO 2 , SrZrO 3 , SrTiO 3 .
3 . The memory cell of claim 1 , wherein first metal oxide material comprises a stoichiometric metal oxide material, and the liner comprises the stoichiometric metal oxide material.
4 . The memory cell of claim 1 , wherein first metal oxide material comprises a non-stoichiometric metal oxide material, and the liner comprises a corresponding stoichiometric metal oxide material.
5 . The memory cell of claim 1 , wherein the reversible resistance-switching element comprises a stack of the first metal oxide material and a second metal oxide material.
6 . The memory cell of claim 5 , wherein the first metal oxide material exhibits resistivity-switching behavior.
7 . The memory cell of claim 1 , wherein the liner comprises a thickness between about 1 nm and about 30 nm.
8 . The memory cell of claim 1 , wherein the liner is formed by any of atomic layer deposition, or chemical vapor deposition.
9 . The memory cell of claim 1 , further comprising a steering element coupled in series with the reversible resistance-switching element.
10 . The memory cell of claim 1 , further comprising a diode coupled in series with the reversible resistance-switching element.
11 . A method of forming a memory cell, the method comprising:
forming a first conducting layer;
forming a reversible resistance switching element above the first conducting layer;
forming a second conducting layer above the reversible resistance switching element; and
forming a liner about a sidewall of the reversible resistance switching element,
wherein:
the reversible resistance switching element comprises a first metal oxide material, and
the liner comprises the first metal oxide material.
12 . The method cell of claim 11 , wherein the first metal oxide material comprises one or more of HfO 2 , Al 2 O 3 , HfSiO x , HfSiO x N y , HfAlO x , Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , Cr 2 O 3 , Fe 2 O 3 , Ni 2 O 3 , CO 2 O 3 , WO 3 , TiO 2 , SrZrO 3 , SrTiO 3 .
13 . The method cell of claim 11 , wherein first metal oxide material comprises a stoichiometric metal oxide material, and the liner comprises the stoichiometric metal oxide material.
14 . The method cell of claim 11 , wherein first metal oxide material comprises a non-stoichiometric metal oxide material, and the liner comprises a corresponding stoichiometric metal oxide material.
15 . The method cell of claim 11 , wherein the reversible resistance-switching element comprises a stack of the first metal oxide material and a second metal oxide material.
16 . The method of claim 15 , wherein the first metal oxide material exhibits resistivity-switching behavior.
17 . The method cell of claim 11 , wherein the liner comprises a thickness between about 1 nm and about 30 nm.
18 . The method cell of claim 11 , wherein the liner is formed by any of atomic layer deposition, or chemical vapor deposition.
19 . The method cell of claim 11 , further comprising forming a steering element coupled in series with the reversible resistance-switching element.
20 . The method cell of claim 11 , further comprising forming a diode coupled in series with the reversible resistance-switching element.