Systems and methods for test circuitry for insulated-gate bipolar transistors
A driver circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”) includes a comparator having a first input coupled to a reference voltage and a second input coupled to a saturation test node, and a first transistor having a first current electrode coupled to the first input of the comparator, a second current electrode coupled to a supply voltage, and a control electrode coupled to a first output of a test circuit. The first output is associated with a test initiation function of an internal test process. A second transistor has a first current electrode coupled to a control electrode of the IBGT transistor, a second current electrode coupled to the supply voltage, and a control electrode coupled to a second output of the test circuit. The second output is associated with an over-current indication of the internal test process.
1. A driver circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”), the driver circuit comprising:
a comparator having a first input coupled to a reference voltage and a second input coupled to a saturation test node;
a first transistor having a first current electrode coupled to the first input of the comparator, a second current electrode coupled to a supply voltage, and a control electrode coupled to a first output of a test circuit, wherein the first output is associated with a test initiation function of an internal test process;
a second transistor having a first current electrode coupled to a control electrode of the IBGT transistor, a second current electrode coupled to the supply voltage, and a control electrode coupled to a second output of the test circuit, wherein the second output is associated with an over-current indication of the internal test process; and
wherein the test circuit is operable to perform the internal test process to confirm an operation of the comparator, the second transistor, and the test circuit.
2. The circuit of claim 1 , wherein the test circuit comprises:
a first latch having an input coupled to an output of the comparator, a reset input, and an output, wherein the output is coupled to the second output of the test circuit; and
a second latch having a first input coupled to the first current electrode of the second transistor, a second input coupled to the output of the comparator, and an output coupled to the first output of the test circuit.
3. The circuit of claim 2 , wherein the test circuit further comprises:
a first inverter having an input coupled to the output of the comparator;
a first delay module having an input coupled to an output of the first inverter;
a first OR gate having a first input operable to receive a test circuit on signal;
a first AND gate having a first input coupled to an output of the first OR gate and a second input coupled to an output of the first delay module, and an output coupled to the input of the first latch;
a second inverter coupled to the output of the first delay module;
a second delay module having an input coupled to an output of the second inverter, and an output coupled to a first input CK of the second latch;
a second OR gate having a first input operable to receive a test circuit start signal, a second input operable to receive an over-current reset signal, and an output coupled to a reset input of the first latch;
a third inverter having an input coupled to a third output of the test circuit, wherein the third output is coupled to the first current electrode of the second transistor;
a third OR gate having a first input coupled to a first output of the second latch, a second input coupled to an output of the third inverter, and an output coupled to a second input of the second latch; and
a second AND gate having a first input coupled to a second input of the second latch, a second input operable to receive a start check signal, and an output coupled to the first output of the test circuit.
4. The circuit of claim 2 , wherein the first latch is a set/reset latch.
5. The circuit of claim 2 , wherein the second latch is a flip-flop.
6. The circuit of claim 1 , further comprising a current source coupled to the first current electrode of the second transistor.
7. The circuit of claim 1 , further comprising a pull-up resistor having a first terminal coupled to the second input of the comparator and a second terminal coupled to an internal voltage source.
8. The circuit of claim 1 , further comprising a saturation edge detection circuit having a first input coupled to the first current electrode of the second transistor and a second input coupled to the output of the comparator.
9. The circuit of claim 8 , wherein the saturation edge detection circuit comprises:
a first latch having a first input coupled to a second supply voltage and a second input coupled to the output of the comparator; and
a second latch having a first input coupled to an output of the first latch, a second input operable to receive an on signal.
10. The circuit of claim 9 , wherein the saturation edge detection circuit further comprises:
an inverter having an input operable to receive a pre-delay on signal;
a delay module having an input coupled to an output of the inverter and an output operable to provide the on signal;
a pulse module having an input operable to receive the pre-delay on signal and an output coupled to a reset input of the first latch;
an OR gate having a first input coupled the on signal, a second input coupled to an output of the second latch; and
an AND gate having a first input coupled to an output of the OR gate, a second input operable to receive the pre-delay on signal, and an output coupled to the control electrode of the IGBT.
11. A method for testing an over-current protection circuit coupled to an insulated gate bipolar transistor (“IGBT”), the method comprising:
enabling a self-test function of the over-current protection circuit prior to a powering-on of the IGBT;
performing the self-test function to ensure performance of a plurality of components of the over-current protection circuit; and
if the self-test function is successful, disabling the self-test function of the over-current protection circuit and performing an over-current protection function with the over-current protection circuit.
12. The method of claim 11 , wherein the plurality of components includes a comparator 110 coupled to the IGBT.
13. The method of claim 11 , wherein the plurality of components includes a latch of a test circuit coupled to the IGBT.
14. The method of claim 11 , wherein the plurality of components includes a transistor 116 coupled to the IGBT, wherein the transistor is operable to slow the powering down of the IGBT in the event of an over-current fault.
15. The method of claim 14 , wherein performing the self-test function comprises providing a current to a current electrode of the transistor in order to test a coupling between the transistor and the IGBT.
16. The method of claim 11 , wherein enabling the self-test function comprises enabling a transistor 112 , the transistor operable to reduce a voltage level associated with a saturation test node.
17. The method of claim 16 , wherein enabling the transistor comprises providing a start check signal to the test circuit and performing a logical operation with the start check signal and a test disable signal.
18. The method of claim 11 , wherein disabling the self-test function comprises disabling a transistor 112 , the transistor operable to reduce a voltage level associated with a saturation test node.
19. The method of claim 18 , wherein disabling the transistor comprises performing a logical operation with a start check signal and a test disable signal.
20. The method of claim 11 , wherein performing the self-test function comprises storing a state associated with a saturation test node.