Command Set Extension for Non-Volatile Memory
A method and apparatus are provided for generating an adjusted internal electrical parameter for accessing a NAND Flash memory array based on an adjustment control parameter conveyed by a memory access instruction, where the memory access instruction is compliant with an Open NAND Flash Interface (ONFI) protocol to include a two command cycle sequence to specify a command for accessing the NAND Flash memory with the adjusted internal electrical parameter.
1 . A method comprising:
receiving a memory access instruction for accessing a non-volatile memory array;
generating an adjusted internal electrical parameter for accessing the non-volatile memory array based on an adjustment control parameter conveyed by the memory access instruction, and
accessing the non-volatile memory array using the adjusted internal electrical parameter.
2 . The method of claim 1 , where receiving the memory access instruction comprises receiving a memory access instruction for accessing a NAND Flash memory which is compliant with an Open NAND Flash Interface (ONFI) protocol, where the memory access instruction comprises a two command cycle sequence to specify a command for accessing the NAND Flash memory.
3 . The method of claim 1 , where generating the adjusted internal electrical parameter comprises increasing by a predetermined increment one or more read reference voltages that are applied to a gate of a multi-level cell (MLC) in the non-volatile memory array during a read operation for accessing the non-volatile memory array, where the predetermined increment corresponds to the adjustment control parameter conveyed by the memory access instruction.
4 . The method of claim 1 , where generating the adjusted internal electrical parameter comprises decreasing by a predetermined decrement one or more read reference voltages that are applied to a gate of a multi-level cell (MLC) in the non-volatile memory array during a read operation for accessing the non-volatile memory array, where the predetermined decrement corresponds to the adjustment control parameter conveyed by the memory access instruction.
5 . The method of claim 1 , where generating the adjusted internal electrical parameter comprises applying a temperature compensation adjustment to one or more read reference voltages that are applied to a gate of a multi-level cell (MLC) in the non-volatile memory array during a read operation for accessing the non-volatile memory array, where the temperature compensation adjustment corresponds to the adjustment control parameter conveyed by the memory access instruction.
6 . The method of claim 1 , where generating the adjusted internal electrical parameter comprises increasing, by a predetermined increment, an erase margin that is applied to a block of bitcells in the non-volatile memory array during an erase operation for accessing the non-volatile memory array, where the predetermined increment corresponds to the adjustment control parameter conveyed by the memory access instruction.
7 . The method of claim 1 , where generating the adjusted internal electrical parameter comprises decreasing, by a predetermined decrement, an erase margin that is applied to a block of bitcells in the non-volatile memory array during an erase operation for accessing the non-volatile memory array, where the predetermined decrement corresponds to the adjustment control parameter conveyed by the memory access instruction.
8 . The method of claim 1 , where generating the adjusted internal electrical parameter comprises applying a temperature compensation adjustment to an erase margin that is applied to a block of bitcells in the non-volatile memory array during an erase operation for accessing the non-volatile memory array, where the temperature compensation adjustment corresponds to the adjustment control parameter conveyed by the memory access instruction.
9 . The method of claim 1 , where generating the adjusted internal electrical parameter comprises increasing, by a predetermined increment, a program margin that is applied to a page of bitcells in the non-volatile memory array during a program operation for accessing the non-volatile memory array, where the predetermined increment corresponds to the adjustment control parameter conveyed by the memory access instruction.
10 . The method of claim 1 , where generating the adjusted internal electrical parameter comprises decreasing, by a predetermined decrement, a program margin that is applied to a page of bitcells in the non-volatile memory array during a program operation for accessing the non-volatile memory array, where the predetermined decrement corresponds to the adjustment control parameter conveyed by the memory access instruction.
11 . The method of claim 1 , where generating the adjusted internal electrical parameter comprises applying a temperature compensation adjustment to a program margin that is applied to a page of bitcells in the non-volatile memory array during a program operation for accessing the non-volatile memory array, where the temperature compensation adjustment corresponds to the adjustment control parameter conveyed by the memory access instruction.
12 . A device comprising:
a power supply unit for generating a supply voltage;
a non-volatile memory array comprising one or more line driver circuits and a plurality of sets of bit cells arranged in rows and columns, the non-volatile memory array adapted to receive the supply voltage at the one or more line driver circuits; and
a controller adapted to receive a memory access instruction for accessing the non-volatile memory array which comprises a control code, the controller adapted to provide a control signal to the power supply unit for adjusting the supply voltage generated by the power supply unit based on the control code.
13 . The device of claim 12 , wherein the power supply unit is a charge pump circuit.
14 . The device of claim 12 , where the memory access instruction comprises a memory access instruction which is compliant with an Open NAND Flash Interface (ONFI) protocol for accessing a NAND Flash memory.
15 . The device of claim 12 , where the controller provides a control signal to the power supply unit to increase by a predetermined increment one or more read reference voltages that are applied to a gate of a multi-level cell (MLC) in the non-volatile memory array, where the predetermined increment corresponds to a first control code in the memory access instruction.
16 . The device of claim 12 , where the controller provides a control signal to the power supply unit to decrease by a predetermined decrement one or more read reference voltages that are applied to a gate of a multi-level cell (MLC) in the non-volatile memory array, where the predetermined decrement corresponds to a second control code in the memory access instruction.
17 . The device of claim 12 , where the controller provides a control signal to the power supply unit to increase by a predetermined increment an erase margin that is applied to a block of multi-level bitcells in the non-volatile memory array, where the predetermined increment corresponds to a third control code in the memory access instruction.
18 . The device of claim 12 , where the controller provides a control signal to the power supply unit to decrease by a predetermined decrement an erase margin that is applied to a block of multi-level bitcells in the non-volatile memory array, where the predetermined decrement corresponds to a fourth control code in the memory access instruction.
19 . The device of claim 12 , where the controller provides a control signal to the power supply unit to increase by a predetermined increment a program margin that is applied to a page of multi-level bitcells in the non-volatile memory array, where the predetermined increment corresponds to a fifth control code in the memory access instruction.
20 . The device of claim 12 , where the controller provides a control signal to the power supply unit to decrease by a predetermined decrement a program margin that is applied to a page of multi-level bitcells in the non-volatile memory array, where the predetermined decrement corresponds to a sixth control code in the memory access instruction.