IP Library Granted Patent US 9,224,466
Granted Patent B1
US 9,224,466 · App. 14/499,717 · Granted Dec 29, 2015

Dual capacitor sense amplifier and methods therefor

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Quick Facts
Patent No.
US 9,224,466
App. No.
14/499,717
Granted
Dec 29, 2015
Kind
B1
Abstract

Methods and apparatus are provided for reading a selected memory cell of a memory array using a sense amplifier that includes a first capacitor and a second capacitor. The selected memory cell is coupled to a bit line and a selected word line. A first noise voltage is generated on the first capacitor, and a selected memory cell voltage and a second noise voltage are generated on the second capacitor. The first noise voltage is an estimate of the second noise voltage. An output signal value is generated proportional to a difference between the selected memory cell voltage and a reference voltage, and a difference between the first noise voltage and second noise voltage. The output signal value is used to determine a data value for the selected memory cell.

Claims (54)

1. A method for use with a memory array comprising a selected memory cell and a plurality of unselected memory cells, the selected memory cell coupled to a selected word line and a selected bit line, each unselected memory cell coupled to the selected bit line and a corresponding one of a plurality of unselected word lines, the selected bit line biased at a selected bit line voltage, each unselected word line biased at an unselected word line voltage, the method comprising:

integrating a first selected bit line current on a first capacitor of a sense amplifier for a first sense interval, the first selected bit line current comprising a first noise current of the memory array; and

integrating a second selected bit line current on a second capacitor of the sense amplifier for a second sense interval, the second selected bit line current comprising a sum of a current conducted by the selected memory cell and a second noise current of the memory array.

2. The method of claim 1 , wherein the first capacitor has a first capacitor value and the second capacitor has a second capacitor value, and the first capacitor value and the second capacitor value are equal within a predetermined capacitor matching accuracy.

3. The method of claim 1 , wherein the first noise current comprises an estimate of the second noise current.

4. The method of claim 1 , wherein the first sense interval substantially equals the second sense interval.

5. The method of claim 1 , wherein the selected memory cell and the unselected memory cells each comprise a reversible resistance-switching element.

6. A sense amplifier for use with a memory array comprising a selected memory cell and a plurality of unselected memory cells, the selected memory cell coupled to a selected word line and a selected bit line, each unselected memory cell coupled to the selected bit line and a corresponding one of a plurality of unselected word lines, the selected bit line biased at a selected bit line voltage, each unselected word line biased at an unselected word line voltage, the sense amplifier comprising:

an input terminal coupled to the selected bit line, an output terminal, a reference terminal and a clock terminal;

a comparator comprising a first input terminal, a second input terminal, and an output terminal coupled to the output terminal of the sense amplifier;

a first capacitor comprising a first terminal coupled to the input terminal of the sense amplifier and the first input terminal of the comparator, and a second terminal coupled to the clock terminal; and

a second capacitor comprising a first terminal coupled to the input terminal of the sense amplifier and the second input terminal of the comparator, and a second terminal coupled to the reference terminal.

7. The sense amplifier of claim 6 , wherein the first capacitor has a first capacitor value and the second capacitor has a second capacitor value, and the first capacitor value and the second capacitor value are equal within a predetermined capacitor matching accuracy.

8. The sense amplifier of claim 6 , further comprising:

a first switch coupled between the first terminal of the first capacitor and the input terminal of the sense amplifier; and

a second switch coupled between the first terminal of the second capacitor and the input terminal of the sense amplifier.

9. The sense amplifier of claim 8 , wherein:

the first switch connects the first terminal of the first capacitor and the input terminal of the sense amplifier for a first sense interval; and

the second switch connects the first terminal of the second capacitor and the input terminal of the sense amplifier for a second sense interval,

wherein the first sense interval substantially equals the second sense interval.

10. The sense amplifier of claim 6 , further comprising:

a pre-charge input terminal; and

a third switch coupled between the pre-charge input terminal and the first terminal of the first capacitor and the first terminal of the second capacitor.

11. The sense amplifier of claim 6 , further comprising a fourth switch coupled between the clock terminal and the second terminal of the first capacitor and the second terminal of the second capacitor.

12. The sense amplifier of claim 6 , further comprising a fifth switch coupled between the second terminal of the second capacitor and the reference terminal.

13. A method for determining a data value of a selected memory cell of a memory array, the selected memory cell coupled to a selected word line and a selected bit line, the memory array further comprising a plurality of unselected memory cells, each unselected memory cell coupled to the selected bit line and a corresponding one of a plurality of unselected word lines, the selected bit line biased at a selected bit line voltage, each unselected word line biased at an unselected word line voltage, the method comprising:

providing a sense amplifier comprising a first capacitor, a second capacitor, a reference terminal coupled to a reference voltage, and an output terminal;

generating a first voltage on the first capacitor proportional to a first noise current in the memory array;

generating a second voltage on the second capacitor proportional to a current conducted by the selected memory cell;

generating a third voltage on the second capacitor proportional to a second noise current in the memory array;

generating an output voltage at the output terminal, wherein the output voltage is proportional to a difference between the reference voltage and the second voltage and a difference between the first voltage and the third voltage; and

determining the data value based on the output voltage.

14. The method of claim 13 , wherein the first capacitor has a first capacitor value and the second capacitor has a second capacitor value, and the first capacitor value and the second capacitor value are equal within a predetermined capacitor matching accuracy.

15. The method of claim 13 , wherein the first voltage substantially equals the third voltage.

16. The method of claim 13 , wherein generating the first voltage comprises:

biasing the selected word line to the unselected word line voltage; and

coupling the bit line to the first capacitor for a first sense interval.

17. The method of claim 13 , wherein generating a second voltage and generating a third voltage comprises:

biasing the selected word line to a selected word line voltage; and

coupling the bit line to the second capacitor for a second sense interval.

18. The method of claim 13 , wherein:

generating the first voltage comprises a first sense interval and generating the second voltage and generating a the third voltage comprises a second sense interval; and

the first sense interval substantially equals the second sense interval.

19. The method of claim 13 , wherein generating the output voltage comprises:

coupling a first terminal of the first capacitor to a first input terminal of a comparator, and coupling a second terminal of the first capacitor to a ground potential;

coupling a first terminal of the second capacitor to a second terminal of the comparator, and coupling a second terminal of the second capacitor to the reference terminal; and

coupling an output of the comparator to the output terminal of the sense amplifier.

20. The method of claim 13 , wherein the selected memory cell and the unselected memory cells each comprise a reversible resistance-switching element.

21. A method for use with a memory array comprising a selected memory cell and a plurality of unselected memory cells, the selected memory cell coupled to a selected word line and a selected bit line, each unselected memory cell coupled to the selected bit line and a corresponding one of a plurality of unselected word lines, the selected bit line biased at a selected bit line voltage, each unselected word line biased at an unselected word line voltage, the method comprising:

providing a sense amplifier comprising:

an input terminal coupled to the selected bit line, an output terminal, a reference terminal and a clock terminal;

a comparator comprising a first input terminal, a second input terminal, and an output terminal coupled to the output terminal of the sense amplifier;

a first capacitor comprising a first terminal coupled to the input terminal of the sense amplifier and the first terminal of the comparator, and a second terminal coupled to the clock terminal; and

a second capacitor comprising a first terminal coupled to the input terminal of the sense amplifier and the second terminal of the comparator, and a second terminal coupled to the reference terminal.

Assignments (4)
CHANGE OF NAME Recorded May 25, 2016
From: SANDISK TECHNOLOGIES INC
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 038807/0948 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT LISTED PATENT NUMBER 8853569 TO THE CORRECT PATENT NUMBER 8883569 PREVIOUSLY RECORDED ON REEL 038300 FRAME 0665. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Apr 25, 2016
From: SANDISK 3D LLC
To: SANDISK TECHNOLOGIES INC.
Reel/Frame 038520/0552 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2016
From: SANDISK 3D LLC.
To: SANDISK TECHNOLOGIES INC.
Reel/Frame 038300/0665 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2014
From: CHEN, YINGCHANG; NIGAM, ANURAG
To: SANDISK 3D LLC
Reel/Frame 033840/0258 →