Fan-out wafer level packages containing embedded ground plane interconnect structures and methods for the fabrication thereof
View Patent ↗Fan-Out Wafer Level Packages (FO-WLPs) and methods for fabricating FO-WLPs containing Embedded Ground Planes (EGPs) and backside EGP interconnect structures are provided. In one embodiment, the method includes electrically coupling an EGP to a backside terminal of a first microelectronic device through a backside EGP interconnect structure. A molded package body is formed around the first microelectronic device, the EGP, and the EGP interconnect structure. The molded package body has a frontside at which the EGP is exposed. One or more Redistribution Layers are formed over the frontside of the molded packaged body and contain at least one interconnect line electrically coupled to the backside contact through the EGP and the backside EGP interconnect structure.
1. A method for fabricating a Fan-Out Wafer Level Package (FO-WLP), comprising:
electrically coupling an Embedded Ground Plane (EGP) to a backside contact of a first microelectronic device through a backside EGP interconnect structure;
electrically coupling the backside EGP interconnect structure between the EGP and a backside contact of a second microelectronic device;
forming a molded package body around the first microelectronic device, the second microelectronic device, the EGP, and the backside EGP interconnect structure, the molded package body having a frontside at which the EGP is exposed; and
producing one or more Redistribution Layers (RDLs) over the frontside of the molded packaged body, the one or more RDLs containing at least one interconnect line electrically coupled to the backside contact of the first microelectronic device through the EGP and the backside EGP interconnect structure.
2. The method of claim 1 wherein electrically coupling the backside EGP interconnect structure between the EGP and the backside contact comprises bonding the backside EGP interconnect structure to the backside contact utilizing an electrically-conductive adhesive.
3. The method of claim 1 further comprising:
placing the first microelectronic device on a temporary substrate; and
after placing the first microelectronic device, positioning the backside EGP interconnect structure to extend at least partially over the backside contact.
4. The method of claim 3 further comprises dispensing an electrically-conductive bonding material onto at least one of the backside EGP interconnect structure and the backside contact prior to positioning the backside EGP interconnect structure to extend at least partially over the backside contact.
5. The method of claim 3 further comprising placing the EGP on the temporary substrate at a location laterally adjacent the first microelectronic device and underlying the backside EGP interconnect structure.
6. The method of claim 1 wherein the first and second microelectronic devices have different heights, and wherein the method further comprises fabricating the backside EGP interconnect structure to have at least one step feature accommodating the difference in the heights of the first and second microelectronic devices.
7. The method of claim 1 further comprising electrically coupling the backside EGP interconnect structure between the EGP and a first terminal of a Surface Mount Device (SMD).
8. The method of claim 7 wherein the producing comprises producing the one or more RDLs to contain an interconnect line electrically coupled to a second terminal of the SMD.
9. The method of claim 1 wherein the EGP and the backside EGP interconnect structure are integrally formed as a single piece, and wherein the method further comprises:
placing the microelectronic device on a temporary substrate; and
positioning the EGP and backside EGP interconnect structure adjacent the microelectronic component such that the EGP interconnect structure extends at least partially over the backside contact.
10. The method of claim 1 wherein the EGP and the backside EGP interconnect structure are separate pieces, and wherein the method further comprises:
placing the first microelectronic device and the EGP on a temporary substrate; and
positioning the backside EGP interconnect structure over the EGP and over the first microelectronic device after placing the EGP and the first microelectronic device on the temporary substrate.
11. The method of claim 10 further comprising bonding the backside EGP interconnect structure to the EGP utilizing an electrically-conductive bonding material.
12. A method for fabricating a Fan-Out Wafer Level Package (FO-WLP), comprising:
placing a microelectronic device on a temporary substrate;
electrically coupling an Embedded Ground Plane (EGP) to a backside contact of a first microelectronic device through a backside EGP interconnect structure, the EGP and the backside EGP interconnect structure integrally formed as a single piece and positioned adjacent the microelectronic component such that the EGP interconnect structure extends at least partially over the backside contact;
forming a molded package body around the first microelectronic device, the EGP, and the backside EGP interconnect structure, the molded package body having a frontside at which the EGP is exposed; and
producing one or more Redistribution Layers (RDLs) over the frontside of the molded packaged body, the one or more RDLs containing at least one interconnect line electrically coupled to the backside contact through the EGP and the backside EGP interconnect structure.
13. The method of claim 12 further comprising electrically coupling the backside EGP interconnect structure between the EGP and a first terminal of a Surface Mount Device (SMD).
14. The method of claim 13 wherein the producing comprises producing the RDLs to contain an interconnect line electrically coupled to a second terminal of the SMD.
15. A method for fabricating a Fan-Out Wafer Level Package (FO-WLP), comprising:
placing an Embedded Ground Plane (EGP) and a first microelectronic device having a backside contact on a temporary substrate;
dispensing an electrically-conductive conductive bonding material over selected regions of the EGP;
after dispensing the electrically-conductive bonding material, positioning a backside EGP interconnect structure over the EGP, over the first microelectronic device, and in contact with the electrically-conductive conductive bonding material to electrically couple the EGP to the backside contact through a backside EGP interconnect structure;
forming a molded package body around the first microelectronic device, the EGP, and the backside EGP interconnect structure, the molded package body having a frontside at which the EGP is exposed; and
producing one or more Redistribution Layers (RDLs) over the frontside of the molded packaged body, the one or more RDLs containing at least one interconnect line electrically coupled to the backside contact through the EGP and the backside EGP interconnect structure.
16. The method of claim 15 wherein the backside EGP interconnect structure comprises a metal clip.
17. The method of claim 15 wherein the electrically-conductive bonding material comprises a metal-filled epoxy, and wherein the method further comprises curing the metal-filled epoxy after positioning the backside EGP interconnect structure over the EGP, over the first microelectronic device, and in contact with the electrically-conductive bonding material.
18. The method of claim 15 further comprising electrically coupling the backside EGP interconnect structure between the EGP and a first terminal of a Surface Mount Device (SMD).