Semiconductor device having a nanotube layer and method for forming
View Patent ↗A method of forming a semiconductor device includes forming a first conductive layer over the substrate. A dielectric layer, having a first opening, is formed over the first conductive layer. A seed layer is deposited over the first dielectric layer and in the first opening. A layer is formed of conductive nanotubes from the seed layer over the first dielectric layer and over the first opening. A second dielectric is formed over the layer of conductive nanotubes. An opening is formed in the second dielectric layer over the first opening. Conductive material is deposited in the second opening.
1. A semiconductor device, comprising:
a substrate;
a conductive layer over the substrate;
a first dielectric layer over the conductive layer, the dielectric layer having a first opening;
a first plurality of conductive nanotubes over the dielectric layer;
a second plurality of conductive nanotubes over the first opening in the dielectric layer;
a second dielectric layer above the first plurality of conductive nanotubes and the second plurality of conductive nanotubes, the second dielectric layer having a second opening that is over the second plurality of conductive nanotubes; and
a conductive material in the second opening to form electrical contact between the conductive layer and the conductive material through the second plurality of conductive nanotubes, wherein the first plurality of nanotubes extends from the first dielectric layer to the second dielectric layer and the second plurality of nanotubes extends from the conductive layer to the conductive material.
2. The semiconductor device of claim 1 , wherein the first plurality and second plurality of conductive nanotubes are homogeneous.
3. The semiconductor device of claim 1 , wherein the conductive nanotubes of the first and second pluralities of conductive nanotubes are carbon nanotubes.
4. The semiconductor device of claim 1 , wherein the first dielectric layer comprises one of a group consisting of an oxide and nitride.
5. The semiconductor device of claim 1 wherein an alloy between the second plurality of conductive nanotubes and the conductive layer comprises cobalt.
6. The semiconductor device of claim 5 , wherein the metal layer comprises a copper layer and a layer comprising titanium and tantalum.
7. The semiconductor device of claim 1 , wherein the metal material comprises a first metal layer contacting a sidewall of the second opening and tops of the second plurality of conductive nanotubes and a metal fill for filling the second opening.
8. The semiconductor device of claim 7 , wherein the conductive material comprises copper.
9. The semiconductor device of claim 1 , wherein the second plurality of nanotubes is characterized as a conductive via and the first plurality of nanotubes is characterized as an interlayer dielectric surrounding the conductive via.
10. The semiconductor device of claim 1 , wherein the conductive material comprises a metal.