Coating layer for a conductive structure
View Patent ↗A coating layer for use in copper integrated circuit interconnect and other conductive structures hinders and decreases oxide growth on surfaces of such conductive structures. The coating layer includes an amorphous copper containing layer deposited on a crystalline copper substrate, such as utilized for a lead frame and a bonding wire. Additional amorphous layers may be interposed between the amorphous copper containing layer and the copper substrate, such as an amorphous tantalum nitride layer and an amorphous titanium nitride layer.
1. A conductive structure comprising:
a crystalline copper substrate suitable for an electrically conductive structure; and
a coating layer over the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing film, wherein the coating layer further comprises:
an amorphous tantalum nitride layer between the crystalline copper substrate and an amorphous titanium nitride layer; and
the amorphous titanium nitride layer between the amorphous tantalum nitride layer and the amorphous copper containing film.
2. The conductive structure as recited in claim 1 , wherein the amorphous copper containing film comprises an amorphous copper alloy.
3. The conductive structure as recited in claim 2 , wherein the amorphous copper alloy is selected from the group consisting of an amorphous copper zirconium alloy and an amorphous copper hafnium alloy.
4. A conductive structure comprising:
a crystalline copper substrate suitable for an electrically conductive structure; and
a coating layer over the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing film, wherein the amorphous copper containing film comprises an amorphous copper alloy.
5. A conductive structure comprising:
a crystalline copper substrate suitable for an electrically conductive structure; and
a coating layer over the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing film, wherein the coating layer comprises an amorphous copper alloy layer interposed between the amorphous copper containing film and the crystalline copper substrate.
6. The conductive structure as recited in claim 5 , wherein the amorphous copper alloy layer comprises an amorphous copper zirconium alloy.
7. The conductive structure as recited in claim 5 , wherein the amorphous copper alloy layer comprises an amorphous copper hafnium alloy.
8. A conductive structure comprising:
a crystalline copper substrate suitable for an electrically conductive structure; and
a coating layer over the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing film, wherein the coating layer has a thickness in a range of approximately 20-500 angstroms.
9. The A conductive structure comprising:
a crystalline copper substrate suitable for an electrically conductive structure; and
a coating layer over the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing film, wherein the conductive structure is a bonding wire.
10. A conductive structure comprising:
a crystalline copper substrate suitable for an electrically conductive structure; and
a coating layer over the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing film, wherein the conductive structure is a lead frame suitable for use in a semiconductor integrated circuit package.
11. A method for forming a conductive structure, the method comprising forming a coating layer on a crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing layer, wherein the forming of the coating layer on the crystalline copper substrate further comprises:
forming an amorphous tantalum nitride layer over the crystalline copper substrate;
forming an amorphous titanium nitride layer over the amorphous tantalum nitride layer; and
forming the amorphous copper containing layer, wherein the amorphous copper containing layer is separated from the crystalline copper substrate by the amorphous tantalum nitride layer and the amorphous titanium nitride layer.
12. The method as recited in claim 11 , wherein the amorphous copper containing layer comprises an amorphous copper alloy.
13. The method as recited in claim 12 , wherein the amorphous copper alloy is selected from the group consisting of an amorphous copper zirconium alloy and an amorphous copper hafnium alloy.
14. A method for forming a conductive structure, the method comprising forming a coating layer on a crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing layer, wherein the forming of the coating layer on the crystalline copper substrate further comprises performing an ion implantation of the crystalline copper substrate to form the amorphous copper containing layer.
15. A method for forming a conductive structure, the method comprising forming a coating layer on a crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing layer, wherein the amorphous copper containing layer is formed with an amorphous copper alloy.
16. A method for forming a conductive structure, the method comprising forming a coating layer on a crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing layer, wherein the forming of the coating layer on the crystalline copper substrate further comprises:
forming an amorphous copper alloy layer over the crystalline copper substrate; and
forming the amorphous copper containing layer, wherein the amorphous copper containing layer is separated from the crystalline copper substrate by the amorphous copper alloy layer.
17. A method for forming a conductive structure, the method comprising forming a coating layer on a crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing layer, wherein the conductive structure is a bonding wire.
18. A method for forming a conductive structure, the method comprising forming a coating layer on a crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing layer, wherein the conductive structure is a lead frame suitable for use in a semiconductor integrated circuit package.
19. Electrical circuitry comprising a conductive structure, wherein the conductive structure further comprises:
a crystalline copper substrate; and
a coating layer on the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing layer, wherein the coating layer further comprises:
an amorphous tantalum nitride layer between the crystalline copper substrate and an amorphous titanium nitride layer; and
the amorphous titanium nitride layer between the amorphous tantalum nitride layer and the amorphous copper containing layer.
20. The electrical circuitry as recited in claim 19 , wherein the amorphous copper containing layer comprises an amorphous copper alloy.
21. Electrical circuitry comprising a conductive structure, wherein the conductive structure further comprises:
a crystalline copper substrate; and
a coating layer on the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing layer, wherein the coating layer comprises an amorphous copper alloy layer interposed between an amorphous copper containing layer and the crystalline copper substrate.
22. Electrical circuitry comprising a conductive structure, wherein the conductive structure further comprises:
a crystalline copper substrate; and
a coating layer on the crystalline copper substrate, wherein the coating layer comprises a continuous amorphous copper containing layer, wherein the electrical circuitry includes an integrated circuit die mounted on a lead frame.
23. The electrical circuitry as recited in claim 22 , wherein the lead frame comprises the conductive structure.
24. The electrical circuitry as recited in claim 22 , further comprising a bonding wire coupled between the integrated circuit die and the lead frame, wherein the bonding wire comprises the conductive structure.
25. The method as recited in claim 11 , wherein the forming of the coating layer on the crystalline copper substrate further comprises performing a sputter deposition of any one or more of the amorphous tantalum nitride layer, the amorphous titanium nitride layer, or the amorphous copper containing layer.
26. The conductive structure as recited in claim 8 , wherein the amorphous copper containing film comprises an amorphous copper alloy.
27. The conductive structure as recited in claim 9 , wherein the amorphous copper containing film comprises an amorphous copper alloy.
28. The conductive structure as recited in claim 10 , wherein the amorphous copper containing film comprises an amorphous copper alloy.