Die edge seal employing low-K dielectric material
A semiconductor wafer has a multi-stage structure that damps and contains nascent cracks generated during dicing and inhibits moisture penetration into the active region of a die. The wafer includes an array of die regions separated by scribe lanes. The die regions include an active region and a first ring that surrounds the active region. A portion of the first ring includes a low-k dielectric material. A second ring includes a stack of alternating layers of metal and interlayer dielectric (ILD) material. A dummy metal region around the rings includes a stacked dummy metal features and surrounds the active region. A regular or irregular staggered arrangement of saw grid process control (SGPC) features reduces mechanical stress during dicing.
1. A semiconductor wafer comprising an array of die regions separated by scribe lanes, wherein the wafer further comprises:
an active region in a die region;
a first ring at least partially surrounding the active region and within the die region, wherein at least a portion of the first ring comprises a low-k dielectric material;
at least one of a dummy metal region that at least partially surrounds the active region, wherein the dummy metal region comprises a plurality of stacked dummy metal features disposed along at least one side of the die region, and a plurality of scribe-grid process-control (SGPC) features disposed alternately along opposing sides of a saw blade kerf region of a first scribe lane, such that the SGPC features are staggered with respect to each other and aligned along the opposing sides of the saw blade kerf region such that a saw blade will contact no more than one of the SGPC features at a time.
2. The semiconductor wafer of claim 1 , wherein the low-k dielectric material fills a trench of the semiconductor wafer.
3. The semiconductor wafer of claim 1 , wherein the first ring has a rectangular cross-section.
4. The semiconductor wafer of claim 1 , wherein the first ring completely surrounds the active region.
5. The semiconductor wafer of claim 1 , wherein the at least one die region further comprises a second ring at least partially surrounding the active region.
6. The semiconductor wafer of claim 5 , wherein the second ring comprises a stack of alternating layers of metal and interlayer dielectric (ILD) material.
7. The semiconductor wafer of claim 1 , wherein no portion of any of the stacked dummy metal features in the at least one die region extends into an adjacent saw blade kerf region.
8. The semiconductor wafer of claim 1 , wherein the stacked dummy metal features include a plurality of first metal structures having generally L-shaped or V-shaped layouts.
9. The semiconductor wafer of claim 8 , wherein each of the stacked dummy metal features includes at least one second metal structure having a generally rectangular cross section and disposed between a pair of the first metal structures, wherein the stacked dummy metal features are vertically spaced and disconnected from each other.
10. The semiconductor wafer of claim 1 , wherein the first ring is substantially free or completely free of metal.
11. The semiconductor wafer of claim 1 , wherein the low-k material is porous.
12. The semiconductor wafer of claim 1 , wherein the low-k material comprises at least one of fluorinated SiO2, organosilane, and amorphous fluorocarbon.
13. The semiconductor wafer of claim 1 , wherein the low-k material comprises at least one of carbon-doped silicon dioxide, porous silicon dioxide, porous carbon-doped silicon dioxide, a spin-on organic polymeric dielectric, and a spin-on silicon-based polymeric dielectric.
14. The semiconductor wafer of claim 1 , wherein the low-k material has a dielectric constant value of less than 4.
15. The semiconductor wafer of claim 1 , wherein no portion of any dummy metal feature in the at least one die region extends into an adjacent saw blade kerf region.
16. The semiconductor wafer of claim 5 , wherein the second ring is located between the active region and the first ring.
17. The semiconductor wafer of claim 1 , wherein the dummy metal region at least partially surrounds the first ring.