IP Library Patent Application 14558694
Patent Application
App. No. 14/558,694

METHOD AND APPARATUS FOR CIRCUIT RELIABILITY AGING

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Patent No.
US None
App. No.
14/558,694
Abstract

A method for integrated circuit reliability aging simulation includes dividing a target time period into N stages including a first stage and a second stage; obtaining first parameter values of a reliability model for the first stage; performing a first simulation on the circuit based on the reliability model and the first parameter values to obtain first aging results; obtaining second parameter values of the reliability model for the second stage; and performing a second simulation on the circuit based on the reliability model and the second parameter values to obtain second aging results.

Claims (58)

1 . A method for reliability aging simulation of a circuit for a predetermined target time period, the method comprising:

dividing the target time period into N stages including a first stage and a second stage, where N is a natural number equal to or greater than 2;

obtaining first parameter values of a reliability model for the first stage;

performing, for the first stage, a first simulation on the circuit based on the reliability model and the first parameter values to obtain first aging results;

obtaining second parameter values of the reliability model for the second stage based on the first aging results; and

performing, for the second stage, a second simulation on the circuit based on the reliability model and the second parameter values to obtain second aging results.

2 . The method of claim 1 , wherein:

obtaining the first parameter values comprises obtaining initial parameter values for the reliability aging simulation as the first parameter values; and

obtaining the second parameter values comprises combining the first aging results and the first parameter values to obtain the second parameter values for the second stage.

3 . The method of claim 1 , wherein the first aging results are drift parameter values calculated with respect to the first stage, or drifted parameter values calculated as the reliability aging simulation is proceeding to the end of the first stage, and

the second aging results are drift parameter values calculated with respect to the second stage, or drifted values of the respective parameters calculated as the reliability aging simulation is proceeding to the end of the second stage.

4 . The method of claim 1 , further comprising:

obtaining i th parameter values of the reliability model for an i th stage based on (i−1) th aging results, where i denotes a natural number from 3 to N; and

performing, for the i th stage of the target time period, an i th simulation on the circuit based on the reliability model and the i th parameter values to obtain i th aging results.

5 . The method of claim 4 , wherein obtaining the i th parameter values comprises combining the (i−1) th aging results and (i−1) th parameter values to obtain i th parameter values of the reliability model for the i th stage.

6 . The method of claim 4 , wherein the i th aging results are drift parameter values calculated with respect to the i th stage, or drifted parameter values calculated as the reliability aging simulation is proceeding until the end of the i th stage.

7 . The method of claim 1 , further comprising:

performing a performance simulation based on drifted parameter values calculated as the reliability aging simulation is proceeding until the end of an N th stage.

8 . The method of claim 1 , wherein the reliability aging simulation is performed based on a netlist of the circuit, and the method further comprises:

generating a netlist of the circuit based on at least one of a schematic or layout of the circuit.

9 . An apparatus for performing a reliability aging simulation of a circuit for a target time period, the apparatus comprising:

a dividing module for dividing the target time period into N stages including a first stage and a second stage, where N is a natural number equal to or greater than 2; and

a simulation module for:

obtaining first parameter values of a reliability model for the first stage;

performing, for the first stage, a first simulation on the circuit based on the reliability model and the first parameter values to obtain first aging results;

obtaining second parameter values of the reliability model for the second stage based on the first aging results; and

performing, for the second stage, a second simulation on the circuit based on the reliability model and second parameter values to obtain second aging results.

10 . The apparatus of claim 9 , wherein:

obtaining the first parameter values comprises obtaining initial parameter values for the reliability aging simulation as the first parameter values; and

obtaining the second parameter values comprises combining the first aging results and the first parameter values to obtain the second parameter values.

11 . The apparatus of claim 9 , wherein

the first aging results are drift parameter values calculated with respect to the first stage, or drifted parameter values calculated as the reliability aging simulation is proceeding until the end of the first stage, and

the second aging results are drift parameter values calculated with respect to the second stage, or drifted parameter values calculated as the reliability aging simulation is proceeding until the end of the second stage.

12 . The apparatus of claim 9 , wherein the simulation module is further configured for:

obtaining i th parameter values of the reliability model for an i th stage based on (i−1) th aging results, where i denotes a natural number from 3 to N; and

performing, for an i th stage of the target time period, an i th simulation on the circuit based on the reliability model and the i th parameter values of the reliability model to obtain i th aging results.

13 . The apparatus of claim 12 , wherein said obtaining the i th parameter values comprises:

combining the (i−1) th aging results and (i−1) th parameter values to obtain the i th parameter values of the reliability model for the i th stage.

14 . The apparatus of claim 12 , wherein the i th aging results are drift parameter values calculated with respect to the i th stage, or drifted parameter values calculated as the reliability aging simulation is proceeding till the end of the i th stage.

15 . The apparatus of claim 14 , further comprising:

a performance simulation module for performing a performance simulation based on drifted parameter values calculated as the reliability aging simulation is proceeding till the end of an N th stage.

16 . The apparatus of claim 9 , further comprising:

a netlist generating module for generating the netlist of the circuit based on at least one of a schematic or layout of the circuit,

wherein the reliability aging simulation are performed based upon the netlist.

17 . An apparatus for reliability aging simulation of a circuit for a target time period, the apparatus comprising:

a dividing module for dividing the target time period into N stages including a first stage and a second stage, where N is a natural number equal to or greater than 2;

a first obtaining module for obtaining first parameter values of a reliability model for the first stage;

a first simulation module for performing, for the first stage, a first simulation on the circuit based on the reliability model and the first parameter values to obtain first aging results;

a second obtaining module for obtaining second parameter values of the reliability model for the second stage based on the first aging results; and

a second simulation module for performing, for the second stage, a second simulation on the circuit based on the reliability model and the second parameter values to obtain second aging results.

18 . The apparatus of claim 17 , wherein:

obtaining the first parameter values comprises obtaining initial parameter values for the reliability; and

obtaining the second parameter values comprises combining the first aging results and the first parameter values.

19 . The apparatus of claim 17 , wherein the first aging results are drift parameter values calculated with respect to the first stage, or drifted parameter values calculated as the reliability aging simulation is proceeding until the end of the first stage, and

the second aging results are drift parameter values calculated with respect to the second stage, or drifted parameter values calculated as the reliability aging simulation is proceeding until the end of the second stage.

20 . The apparatus of claim 17 , further comprises:

an i th obtaining module for obtaining i th parameter values of the reliability model for an i th stage based on (i−1) th aging results, where i denotes a natural number from 3 to N; and

an i th simulation module for performing, for an i th stage of the target time period, an i th simulation on the circuit based on the reliability model and the i th parameter values of the reliability model to obtain i th aging results.

Assignments (11)
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040626 FRAME: 0683. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME EFFECTIVE NOVEMBER 7, 2016. Recorded Jan 12, 2017
From: NXP SEMICONDUCTORS USA, INC. (MERGED INTO); FREESCALE SEMICONDUCTOR, INC. (UNDER)
To: NXP USA, INC.
Reel/Frame 041414/0883 →
CHANGE OF NAME Recorded Nov 16, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040626/0683 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 5, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037444/0444 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 5, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037444/0535 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037358/0001 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Feb 18, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035034/0019 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Feb 18, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035033/0923 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Feb 18, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035033/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 2, 2014
From: ZHANG, ZHICHEN; HOURS, XAVIER; SHROFF, MEHUL D.; WANG, CHUANZHENG; ZHANG, QILIN
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 034314/0804 →