IP Library Granted Patent US 9,257,415
Granted Patent B2
US 9,257,415 · App. 14/706,359 · Granted Feb 9, 2016

Stacked microelectronic packages having sidewall conductors and methods for the fabrication thereof

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Quick Facts
Patent No.
US 9,257,415
App. No.
14/706,359
Granted
Feb 9, 2016
Kind
B2
Abstract

Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of stacked microelectronic packages. In one embodiment, the method includes producing a partially-completed stacked microelectronic package including a package body having a vertical package sidewall, a plurality microelectronic devices embedded within the package body, and package edge conductors electrically coupled to the plurality of microelectronic devices and extending to the vertical package sidewall. A flowable conductive material is applied on the vertical package sidewall and contacts the package edge conductors. Selected portions of the flowable conductive material are then removed to define, at least in part, electrically-isolated sidewall conductors electrically coupled to different ones of the package edge conductors.

Claims (35)

1. A stacked microelectronic package, comprising:

first and second package layers bonded in a stacked relationship, each package layer comprising:

a molded package layer body;

a microelectronic device embedded within the molded package layer body; and

package edge conductors electrically coupled to the microelectronic device and extending to at least one sidewall of the package layer; and

a plurality of sidewall conductors electrically coupled to the package edge conductors and electrically interconnecting the microelectronic devices within the upper and lower package layers, the plurality of sidewall conductors composed of an electrically-conductive material deposited on sidewalls of the first and second package layers and having openings extending vertically therethrough electrically isolating adjacent ones of the sidewall conductors.

2. The stacked microelectronic package of claim 1 wherein the electrically-conductive material comprises a metal-containing epoxy.

3. The stacked microelectronic package of claim 1 further comprising a contact formation disposed over the first package layer and electrically coupled to at least one microelectronic device contained within the second package layer through at least one of the plurality of sidewall conductors.

4. The stacked microelectronic package of claim 1 wherein at least one of the first package layer and the second package layer comprises a redistributed chip panel package layer.

5. The stacked microelectronic package of claim 1 wherein the plurality of sidewall conductors have substantially linear shapes.

6. The stacked microelectronic package of claim 5 wherein the plurality of sidewall conductors are vertically oriented.

7. The stacked microelectronic package of claim 1 wherein the plurality of sidewall conductors interconnect different vertically-aligning pairs of the package edge conductors.

8. The stacked microelectronic package of claim 1 further comprises a dielectric material deposited onto sidewalls of the first and second package layers, the dielectric material filling the space between the plurality of sidewall conductors.

9. The stacked microelectronic package of claim 1 wherein the openings extend into the first and second package layers at locations between the plurality of sidewall conductors as viewed from a side of the stacked microelectronic package, and wherein the openings have concave geometries as viewed from a top-down perspective.

10. A stacked microelectronic package, comprising:

a plurality of package layers laminated together in a stacked formation to yield a stacked microelectronic package having a vertical sidewall, each package layer comprising:

a molded package layer body;

a microelectronic device embedded within the molded package layer body; and

package edge conductors extending from the microelectronic device to the vertical sidewall;

a plurality of sidewall conductors formed over the vertical package sidewall, the plurality of sidewall conductors composed of an electrically-conductive material applied on the vertical package sidewall, contacting the package edge conductors, and having vertical openings formed therein electrically isolating adjacent sidewall conductors.

11. The stacked microelectronic package of claim 10 wherein, for each package layer, the molded package layer body comprises a singulated piece of a larger molded panel.

12. The stacked microelectronic package of claim 10 wherein the vertical openings comprise at least one row of vertical openings drilled through the electrically-conductive material.

13. The stacked microelectronic package of claim 10 wherein the electrically-conductive material comprises an electrically-conductive paste.

14. The stacked microelectronic package of claim 10 wherein the vertical openings extend into the vertical sidewall of the stacked microelectronic package.

15. The stacked microelectronic package of claim 10 wherein the plurality of sidewall conductors each have substantially linear, elongated geometries.

16. The stacked microelectronic package of claim 15 wherein the plurality of sidewall conductors are each vertically oriented.

17. A stacked microelectronic package, comprising:

an upper package layer;

a lower package layer bonded to the upper package layer and cooperating therewith to define a vertical sidewall of the stacked microelectronic package;

a first plurality of package edge conductors in the upper package layer and extending to the vertical sidewall;

a second plurality of package edge conductors in the lower package layer and extending to the vertical sidewall;

electrically conductive circuit lines formed on the vertical sidewall composed of an electrically conductive adhesive through which vertical openings are formed to electrically isolate neighboring ones of the electrically conductive circuit lines, the electrically conductive circuit lines interconnecting the first plurality of package edge conductors with the second plurality of package edge conductors.

18. The stacked microelectronic package of claim 17 further comprising a dielectric material deposited onto the vertical sidewall and into the vertical openings.

19. The stacked microelectronic package of claim 17 wherein the vertical openings extend into the vertical sidewall.

20. The stacked microelectronic package of claim 17 wherein the vertical openings comprise at least one row of vertical openings drilled through the electrically conductive adhesive.

Assignments (15)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 20, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037565/0510 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 20, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037565/0527 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0859 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Aug 6, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 036284/0105 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Aug 6, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 036284/0363 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Aug 6, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 036284/0339 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2015
From: VINCENT, MICHAEL B.; HAYES, SCOTT M.; WRIGHT, JASON R.; GONG, ZHIWEI
To: FREESCALE SEMICONDUCTOR INC.
Reel/Frame 035586/0818 →