CIRCUIT INCLUDING A RECTIFYING ELEMENT, AN ELECTRONIC DEVICE INCLUDING A DIODE AND A PROCESS OF FORMING THE SAME
A circuit can include a transistor, a capacitive element, and a rectifying element. The rectifying element and the capacitive element can be serially connected and coupled to the current-carrying terminals of the transistor. An electronic device may include part of the circuit. The electronic device can include a diode that includes a horizontally-oriented semiconductor member and a vertically-oriented semiconductor member having different conductivity types. The ends of the horizontally-oriented semiconductor and vertically-oriented semiconductor members physically contact each other. A process of forming an electronic device can include forming a semiconductor layer and forming a second semiconductor member. In a finished device, a diode includes a junction between dopants of first and second conductivity types within the semiconductor layer, within the semiconductor member, or at an interface between the semiconductor layer and the semiconductor member.
1 . A circuit comprising:
a first transistor including a first current-carrying terminal and a second current-carrying terminal;
a first capacitive element including a first electrode and a second electrode, wherein the first electrode is coupled to the first current-carrying terminal of the first transistor; and
a rectifying element including an anode and a cathode, wherein the cathode is coupled to the second electrode of the first capacitive element, and the anode is coupled to the second current-carrying terminal of the first transistor
wherein the first current-carrying terminal is a drain terminal, and the second current-carrying terminal is a source terminal.
2 . The circuit of claim 1 , wherein the first transistor is an insulated gate field-effect transistor.
3 . The circuit of claim 1 , wherein the rectifying element is a zener diode or a Schottky diode and has a diode breakdown voltage.
4 . The circuit of claim 3 , wherein the diode breakdown voltage is at least 3 V.
5 . The circuit of claim 3 , wherein the diode breakdown voltage is no greater than 12V.
6 . The circuit of claim 3 , wherein the diode breakdown voltage is less than a breakdown voltage between the first and second current-carrying terminals of the first transistor.
7 . The circuit of claim 3 , wherein the diode breakdown voltage is less than half of a breakdown voltage between the first and second current-carrying terminals of the first transistor.
8 . The circuit of claim 1 , further comprising:
a second transistor including a third current-carrying terminal and a fourth current-carrying terminal; and
a second capacitive element including a third electrode and a fourth electrode,
wherein:
the first current-carrying terminal of the first transistor is electrically connected to the first electrode of the first capacitive element and is coupled to an output node;
the second electrode of the first capacitive element is electrically connected to the cathode of the rectifying element;
the second current-carrying terminal of the first transistor is electrically connected to the anode of the rectifying element and is coupled to a first power supply terminal;
the third current-carrying terminal of the second transistor is coupled to a second power supply terminal and the third electrode of the second capacitive element; and
the fourth current-carrying terminal of the second transistor is electrically connected to the fourth electrode of the second capacitive element and is coupled to the output node.
9 . An electronic device comprising:
the current of claim 1 , wherein the rectifying element includes a diode comprising:
a first horizontally-oriented semiconductor member having a first end and a first conductivity type with a first doping concentration;
a first vertically-oriented semiconductor member having a second end and a second conductivity type with a second doping concentration, and the first end of the first horizontally-oriented semiconductor member physically contacts the second end of the first vertically-oriented semiconductor member, wherein either the second conductivity type is different than the first conductivity type, or the second doping concentration is significantly lower than the first doping concentration, or both; and
a metal-containing material in contact with the first vertically-oriented semiconductor member.
10 . The electronic device of claim 9 , further comprising:
a semiconductor layer having a primary surface; and
an insulating layer disposed between the semiconductor layer and the first horizontally-oriented semiconductor member.
11 . The electronic device of claim 9 , wherein:
the first transistor includes a first doped region in a semiconductor layer; and
the first electrode of the first capacitive element includes the first horizontally-oriented semiconductor member, and the second electrode includes the first doped region.
12 . The electronic device of claim 9 , further comprising an electrical contact to the first vertically-oriented semiconductor member.
13 . The electronic device of claim 12 , wherein the first horizontally-oriented semiconductor member has no electrical contact apart from the first vertically-oriented semiconductor member.
14 .- 20 . (canceled)
21 . The circuit of claim 1 , wherein the first current-carrying terminal of the first transistor is electrically connected to the first electrode of the first capacitive element and is coupled to an output node.
22 . The circuit of claim 1 , wherein the second electrode of the first capacitive element is electrically connected to the cathode of the rectifying element.
23 . The circuit of claim 1 , wherein the second current-carrying terminal of the first transistor is electrically connected to the anode of the rectifying element and is coupled to a first power supply terminal.
24 . The electronic device of claim 1 , further comprising an insulating layer disposed between the semiconductor layer and the first horizontally-oriented semiconductor member.
25 . The electronic device of claim 24 , wherein the first doped region is a horizontally-oriented doped region adjacent to a primary surface of the semiconductor layer and beneath the first horizontally-oriented semiconductor member.
26 . The electronic device of claim 25 , further comprising an ohmic contact to the semiconductor layer, wherein the ohmic contact is spaced apart from the first horizontally-oriented semiconductor member and is electrically connected to the electrical contact of the first vertically-oriented semiconductor member.
27 . The electronic device of claim 8 , wherein the third current-carrying terminal of the second transistor is electrically connected to the third electrode of the second capacitive element.