IP Library Granted Patent US 10,459,465
Granted Patent B2
US 10,459,465 · App. 14/844,927 · Granted Oct 29, 2019

Power-down discharger

Inventors: Jan Jezik (Bystricka, CZ); Pierre Andre Genest (Lafitte-Vigordane, FR)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
G05F1/468
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Quick Facts
Patent No.
US 10,459,465
App. No.
14/844,927
Granted
Oct 29, 2019
Kind
B2
Abstract

Active post-power loss discharging of capacitors is provided. In an integrated circuit having a startup behavior depending on a capacitor voltage, a discharge transistor is provided to discharge the capacitor. A power-down discharger actively drives the discharge transistor after a power supply voltage drops below a threshold. The power-down discharger may include, or be coupled to, an internal capacitance that is charged when the power supply voltage is above the threshold, thereby storing sufficient energy for later driving of the discharge transistor. A diode is employed to ensure that the loss of power does not drain away the needed energy until after the discharge has been completed. One illustrative discharging method includes: sensing a condition indicative of power supply voltage loss for an integrated circuit; and actively driving the discharge transistor into a conducting state. The sensing may include driving the discharge transistor inversely to a signal from a pin.

Claims (19)

1. A low dropout (LDO) regulator that comprises:

an output transistor that couples a DC input voltage pin to a DC output voltage pin;

an operational amplifier that drives the output transistor in response to a difference between a feedback signal and a reference voltage from a capacitor;

a soft-start circuit that ramps the reference voltage from an initial voltage;

a discharge transistor that discharges the capacitor when driven to a conducting state; and

a power-down discharger that includes:

an internal capacitance;

a diode, or transistor configured as a diode, connecting the DC input voltage pin to the internal capacitance to charge the internal capacitance;

a sense transistor connecting the internal capacitance to a gate of the discharge transistor to drive the discharge transistor to the conducting state when a voltage on the DC input voltage pin drops below a threshold.

2. The low dropout (LDO) regulator of claim 1 , wherein the discharge transistor is an n-channel metal-oxide-semiconductor field-effect transistor (NMOS), and the sense transistor is a p-channel metal-oxide-semiconductor field-effect transistor (PMOS) having a gate connected to the DC input voltage pin.

3. An integrated power switch that comprises:

an output transistor that couples a power supply voltage on a DC input voltage pin to a DC output voltage pin;

a high-impedance source that drives a gate of the output transistor;

a discharge transistor that discharges the gate of the output transistor when driven to a conducting state; and

a power-down discharger that includes:

a sense transistor having a gate that receives an enable signal;

a diode, or transistor configured as a diode, connecting the sense transistor to a gate of the discharge transistor to drive the discharge transistor to the conducting state when the enable signal is de-asserted.

4. The integrated power switch of claim 3 , wherein the power-down discharger further includes an internal capacitance connected to the gate of the discharge transistor.

5. The integrated power switch of claim 3 , wherein the discharge transistor is an n-channel metal-oxide-semiconductor field-effect transistor (NMOS), and the sense transistor is a p-channel metal-oxide-semiconductor field-effect transistor (PMOS).

Assignments (4)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2015
From: JEZIK, JAN; GENEST, PIERRE ANDRE
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 036490/0938 →
Continuity (2)
Provisional Application 62193221 · Jul 16, 2015
Related Publication 20170017249A1 · Jan 19, 2017