Method and process for integration of TSV-middle in 3D IC stacks
Methods for integrating MOL TSVs in 3D SoC devices including face-to-face bonded IC chips. Embodiments include providing a device layer in each of IC chips on upper surfaces of top and bottom silicon wafers; forming, subsequent to the device layer, through-silicon vias (TSVs) extending through an upper surface of the device layer in each of the IC chips and into the bottom Si wafer; forming, subsequent to the TSVs, a dielectric layer on the upper surface of the device layer in each of the IC chips of the top and bottom Si wafers; forming a back-end-of-line metal layer in the dielectric layer of each of the IC chips of the top and bottom Si wafers; face-to-face bonding of opposing IC chips of the top and bottom Si wafers; and dicing adjacent bonded IC chips through vertically aligned dicing lanes in the top and bottom Si wafers.
1. A method comprising:
providing a device layer in each of integrated circuit (IC) chips on upper surfaces of top and bottom silicon (Si) wafers;
forming, subsequent to the device layer, through-silicon vias (TSVs) extending through an upper surface of the device layer in each of the IC chips and into the bottom Si wafer;
forming, subsequent to the TSVs, a dielectric layer on the upper surface of the device layer in each of the IC chips of the top and bottom Si wafers;
forming a back-end-of-line (BEOL) metal layer in the dielectric layer of each of the IC chips of the top and bottom Si wafers;
face-to-face bonding of opposing IC chips of the top and bottom Si wafers;
dicing adjacent bonded IC chips through vertically aligned dicing lanes in the top and bottom Si wafers;
planarizing the upper surface of the dielectric layer to a level of a BEOL final metal layer in each of the IC chips of the top and bottom Si wafers; and
forming vias in the dielectric layer of each of the IC chips of the top and bottom Si wafers, wherein upper surfaces of the vias are coplanar with the BEOL final metal layer in each of the IC chips of the top and bottom Si wafers,
wherein the face-to-face bonding of the opposing IC chips comprises:
hybrid-oxide bonding of vertically aligned exposed upper surfaces of the vias in the opposing IC chips.
2. The method according to claim 1 , wherein forming a TSV comprises:
forming a cavity extending through the upper surface of the device layer in each of the IC chips and into the bottom Si wafer;
forming a TSV dielectric layer on vertical and horizontal surfaces of the cavity; and
depositing in the cavity a conductive material surrounded by the TSV dielectric layer, wherein an upper surface of the TSV is exposed.
3. The method according to claim 1 , further comprising:
forming conductive elements between the BEOL metal layer and the device layer in each of the IC chips of the top and bottom Si wafers.
4. The method according to claim 1 , wherein the upper surfaces of the vias in the IC chips of the bottom Si wafer are either larger or smaller than the upper surfaces of the vias in the IC chips of the top Si wafer.
5. The method according to claim 1 , further comprising:
forming the BEOL metal layer and the vias in each of the IC chips of the top and bottom Si wafers by a dual damascene process.
6. The method according to claim 1 , further comprising:
prior to the dicing, removing, in each of the IC chips, a vertical portion of the bottom Si wafer to expose a section of each of the TSVs; and
forming conductive elements between an exposed section of each of the TSVs and interconnecting elements of an IC package substrate.
7. The method according to claim 1 , comprising hybrid-oxide bonding at a low-k dielectric layer in the opposing IC chips.
8. The method according to claim 1 , comprising forming the TSVs after forming contacts for the device layer and before forming first via contacts to BEOL metal layer in the IC chips of the bottom Si wafer.
9. The method according to claim 1 , wherein sizes of the TSVs are based on an aspect ratio of 1 to 20.