Memory array and coupled TCAM architecture for improved access time during search operation
View Patent ↗A memory device includes a first ternary content addressable memory (TCAM), a second TCAM, a memory array coupled to the first and second TCAMs, a first priority logic coupled between the first TCAM and the memory array, a second priority logic coupled between the second TCAM and the memory array, and a look-ahead signal generated by the first priority logic and provided to the second priority logic. Match lines from the first and second TCAMs are coupled to respective word lines in the memory array.
1. A memory device comprising:
a first ternary content addressable memory (TCAM);
a second TCAM;
a memory array coupled to the first and second TCAMs;
a first priority logic coupled between the first TCAM and the memory array;
a second priority logic coupled between the second TCAM and the memory array; and
a look-ahead signal generated by the first priority logic and provided to the second priority logic, wherein match lines from the first and second TCAMs are coupled to respective word lines in the memory array, and
wherein a pitch of match lines for the first and second TCAMs is approximately twice a pitch of word lines in the memory array.
2. The memory device of claim 1 further comprising:
decode logic coupled to the memory array; and
control circuitry coupled to the first and second priority logic and the decode logic.
3. The memory device of claim 2 wherein:
during a memory array read operation, the control circuitry disables the first and second priority logic and enables the decode logic.
4. The memory device of claim 2 wherein:
during a memory array write operation, the control circuitry disables the first and second priority logic and enables the decode logic.
5. The memory device of claim 2 wherein:
during a TCAM search operation, the control circuitry enables the first and second priority logic and disables the decode logic.
6. The memory device of claim 1 wherein:
the first and second TCAMs include volatile memory cells and the memory array includes one of a group consisting of volatile memory cells and non-volatile memory cells.
7. The memory device of claim 1 wherein:
the first and second TCAMs include non-volatile memory cells and the memory array includes one of a group consisting of volatile memory cells and non-volatile memory cells.
8. The memory device of claim 1 wherein:
when there is a match in the first TCAM, the look-ahead signal is set to disable the second priority logic, and when there is no match in the first TCAM, the look-ahead signal is set to enable the second priority logic.
9. The memory device of claim 7 wherein:
the non-volatile memory cells are implemented using one or more programmable resistive elements.
10. A semiconductor device comprising:
a memory device including:
a first ternary content addressable memory (TCAM) array;
a second TCAM array;
a memory array coupled to the first and second TCAMs;
an address decode unit coupled to the memory array; and
control circuitry operable to
set a look-ahead signal to give the first TCAM array higher priority than the second TCAM array during TCAM search operations, and
disable the address decode unit during TCAM search operations.
11. The device of claim 10 further comprising:
a first portion of memory cells in the memory array are coupled to the first TCAM array and a second portion of memory cells in the memory array are coupled to the second TCAM array.
12. The device of claim 10
wherein the address decode unit is enabled during memory array read and write operations.
13. The device of claim 10 further comprising:
a first priority logic unit coupled between the first TCAM and the memory array; and
a second priority logic unit coupled between the second TCAM and the memory array, wherein the first and second priority logic units are enabled during TCAM search operations and disabled during memory array read and write operations.
14. The device of claim 12 further comprising:
a set of switches in the memory array, wherein the switches are set to:
couple match lines in the first and second TCAM arrays to respective word lines in the memory array through the first and second priority logic units during the search operations, and
couple the word lines to the address decode unit during the read and write operations.
15. The device of claim 10 wherein:
the first and second TCAMs include volatile memory cells and the memory array includes one of a group consisting of volatile memory cells and non-volatile memory cells.
16. The device of claim 10 wherein:
the first and second TCAMs include non-volatile memory cells and the memory array includes one of a group consisting of volatile memory cells and non-volatile memory cells.
17. The device of claim 13 wherein:
when there is a match in the first TCAM, the look-ahead signal is set to disable the second priority logic, and when there is no match in the first TCAM, the look-ahead signal is set to enable the second priority logic.
18. A method of operating a memory device comprising:
enabling a first priority logic unit coupled between a first ternary content addressable memory (TCAM) array and a memory array and enabling a second priority logic unit coupled between a second TCAM array and the memory array while a TCAM search operation is performed on the first and second TCAM arrays; and
disabling an address decode unit in the memory array during the TCAM search operation.
19. The method of claim 18 further comprising:
during read and write operations of the memory array, disabling the first and second priority logic units and enabling the address decode unit in the memory array.
20. The method of claim 18 further comprising:
setting a look-ahead signal to give the first TCAM array higher priority than the second TCAM array during the TCAM search operation.