Semiconductor device having localized charge balance structure and method
In one embodiment, a semiconductor device has a superjunction structure formed adjoining a low-doped n-type region. A low-doped p-type region is formed adjoining the superjunction structure above the low-doped n-type region and is configured to improve Eas characteristics. A body region is formed adjacent the low-doped p-type region and a control electrode structure is formed adjacent the body region for controlling a channel region within the body region.
1. A method of forming a semiconductor device structure comprising:
providing a semiconductor substrate having a major surface;
forming a first region comprising pillars of first and second conductivity type doped material extending in a generally vertical orientation with respect to the major surface, wherein the first conductivity type is opposite to the second conductivity type, and wherein the first pillar is configured as a vertical current path;
providing a second region of the first conductivity type spaced apart from the major surface, wherein the second region adjoins a lower portion of the first region;
forming a third region of the second conductivity type, wherein the third region adjoins the first region between the major surface and the second region;
forming a body region overlying a portion of the third region;
forming a source region adjoining the body region; and
forming a control electrode adjacent the body region and the source region, wherein the control electrode is configured to control a channel region within the body region but not within the third region.
2. The method of claim 1 further comprising forming a linking region of the first conductivity type, wherein the linking region is between the body region and the third region.
3. The method of claim 1 , wherein forming the third region includes forming the third region having a dopant concentration less than or equal to about 5.0×10 15 atoms/cm 3 .
4. The method of claim 1 , wherein forming the third region includes forming the third region having a dopant concentration between about 1.0×10 15 atoms/cm 3 to about 3.0×10 15 atoms/cm 3 .
5. The method of claim 1 , wherein forming the first region includes forming the pillar of the first conductivity type adjoining the second and third regions.
6. The method of claim 1 , wherein forming the third region includes forming the third region having a thickness from about five microns to about fifteen microns.
7. The method of claim 1 further comprising forming a conductive layer electrically connected to the source region and the third region.
8. The method of claim 1 , wherein forming the control electrode comprises forming a trench control electrode, and wherein forming the third region comprises forming the third region overlapping the trench control electrode such that the trench control electrode terminates within the third region.
9. A method of forming a semiconductor device structure comprising:
providing a semiconductor substrate having a major surface;
forming a first region comprising a first pillar of a first conductivity type doped material extending in a generally vertical orientation with respect to the major surface, wherein the first pillar is configured as a vertical current path;
providing a second region of the first conductivity type spaced apart from the major surface, wherein the second region adjoins a lower portion of the first region;
forming a third region of a second conductivity type opposite to the first conductivity type, wherein the third region adjoins the first region between the major surface and the second region;
forming a body region overlying a portion of the third region;
forming a source region adjoining the body region; and
forming a control electrode adjacent the body region and the source region, wherein the control electrode is configured to control a channel region in the body region, and wherein the control electrode terminates within the third region.
10. The method of claim 9 , wherein forming the first region further comprises forming a second pillar of the second conductivity type adjacent the first pillar and extending in a generally vertical orientation with respect to the major surface.
11. The method of claim 10 , wherein forming the third region comprises forming the third region having a dopant concentration in a range from about 1.0×10 15 atoms/cm 3 to about 4.0×10 15 atoms/cm 3 , and wherein the first region has a charge balance other than zero.
12. The method of claim 9 further comprises forming a fourth region of the first conductivity type between the body region and the third region and configured to link a drain end of the channel region to the first pillar.
13. A method for forming a semiconductor device comprising:
providing a substrate having a semiconductor layer overlying the substrate, wherein the semiconductor layer has a major surface spaced apart from the substrate;
forming a vertically-oriented doped structure comprising a first pillar of a first conductivity type adjacent to the major surface and extending towards the substrate;
forming a body region of a second conductivity type adjacent to another portion of the major surface;
forming a first horizontally-oriented doped region of the first conductivity type spaced apart from the major surface and between the body region and the substrate, wherein the first horizontally-oriented doped region adjoins the first pillar;
forming a second horizontally-oriented doped region of the second conductivity type spaced apart from the major surface and between the first horizontally-oriented doped region and the substrate, wherein the second horizontally-oriented doped region adjoins the first pillar; and
forming a gate electrode electrically insulated from the body region and the first horizontally-oriented doped region,
wherein:
a transistor structure of the semiconductor device comprises the first horizontally-oriented doped region, the body region, and the gate electrode; and
the first pillar electrically connects the transistor structure and the substrate to each other.
14. The method of claim 13 , wherein forming the second horizontally-oriented doped region comprises forming the second horizontally-oriented doped region having a dopant concentration less than or equal to about 5.0×10 15 atoms/cm 3 .
15. The method of claim 13 , wherein forming the second horizontally-oriented doped region comprises forming the second horizontally-oriented doped region having a dopant concentration between about 1.0×10 15 atoms/cm 3 to about 3.0×10 15 atoms/cm 3 .
16. The method of claim 13 , wherein forming the second horizontally-oriented doped region comprises forming the second horizontally-oriented doped region having a thickness from about five microns to about fifteen microns.
17. The method of claim 13 , wherein forming the gate electrode comprises forming a trench gate electrode.
18. The method of claim 13 wherein forming the vertically-oriented doped structure comprises forming a second conductive pillar of the second conductivity type adjacent the first pillar and extending towards the substrate.
19. The method of claim 18 , wherein forming the vertically-oriented doped structure comprises forming the vertically-oriented doped structure having charge balance other than zero.
20. The method of claim 13 further comprising:
forming a source region in the body region; and
forming a conductive layer electrically coupled to the source region and the second horizontally-oriented doped region.