Semiconductor structure including a nonvolatile memory cell and method for the formation thereof

1. A semiconductor structure, comprising:

a nonvolatile memory cell comprising a first nonvolatile bit storage element and a second nonvolatile bit storage element, said first and second nonvolatile bit storage elements having a common source region provided in a semiconductor material and a common control gate structure, each of said first and second nonvolatile bit storage elements comprising:

a drain region and a channel region provided in said semiconductor material, said channel region having a select gate side portion and a floating gate side portion;

a select gate structure at said select gate side portion of said channel region;

a floating gate structure at said floating gate side portion of said channel region; and

an erase gate structure above said select gate structure and adjacent said floating gate structure;

wherein said floating gates for said first and second nonvolatile bit storage elements are separated by an isolation region, said floating gates for said first and second nonvolatile bit storage elements isolation structure have coplanar upper surfaces, and said common control gate structure is disposed on said coplanar upper surfaces and extends above said floating gate structures of said first and second nonvolatile bit storage elements.

2. The semiconductor structure of claim 1 , wherein said select gate structure is provided in a trench formed in said semiconductor material.

3. The semiconductor structure of claim 1 , wherein at least one of said erase gate structure, said select gate structure and said control gate structure comprises an electrically conductive metal.

4. The semiconductor structure of claim 1 , wherein each of said erase gate structure, said select gate structure and said control gate structure comprises said electrically conductive metal, said electrically conductive metal comprising tungsten.

5. The semiconductor structure of claim 1 , wherein said control gate structure comprises a portion above said source region.

6. The semiconductor structure of claim 1 , wherein said erase gate structure of said first nonvolatile bit storage element and said erase gate structure of said second nonvolatile bit storage element are arranged on opposite sides of said source region.

7. The semiconductor structure of claim 1 , wherein each of said first and second nonvolatile bit storage elements comprises a tunnel layer arranged at a side of said floating gate structure facing said erase gate structure.

8. The semiconductor structure of claim 1 , further comprising circuitry comprising at least one of a logic circuit and a static random access memory circuit, said circuitry comprising:

a field effect transistor, said field effect transistor comprising one of a high-k metal gate structure and a polysilicon silicon oxynitride gate structure;

wherein said high-k metal gate structure comprises a gate insulation layer comprising a high-k dielectric material having a greater dielectric constant than silicon dioxide and a gate electrode comprising a metal; and

wherein said polysilicon silicon oxynitride gate structure comprises a gate insulation layer comprising silicon oxynitride and a gate electrode comprising polysilicon.

9. A semiconductor structure, comprising:

a plurality of static random access memory cells, each of said plurality of static random access memory cells having a bitline connection node and an inverse bitline connection node; and

a plurality of nonvolatile memory cells, each of said plurality of nonvolatile memory cells comprising a first nonvolatile bit storage element and a second nonvolatile bit storage element, said first and second nonvolatile bit storage elements having a common source region provided in a semiconductor material and a common control gate structure, each of said first and second nonvolatile bit storage elements comprising:

a drain region and a channel region provided in said semiconductor material, said channel region having a select gate side portion and a floating gate side portion;

a select gate structure provided in a trench in said semiconductor material at said select gate side portion of said channel region;

a floating gate structure at said floating gate side portion of said channel region; and

an erase gate structure above said select gate structure and adjacent said floating gate structure;

wherein said floating gates for said first and second nonvolatile bit storage elements are separated by an isolation region, said floating gates for said first and second nonvolatile bit storage elements isolation structure have coplanar upper surfaces, and said common control gate structure extends above said floating gate structures of said first and second nonvolatile bit storage elements;

wherein each of said bitline connection nodes and said inverse bitline connection nodes of said plurality of static random access memory cells is coupled to a drain region of a respective one of said nonvolatile bit storage elements of said plurality of nonvolatile memory cells; and

wherein said semiconductor structure comprises a drive circuit for performing a storage operation wherein a data bit indicative of a respective voltage at each of said bitline connection nodes and said inverse bitline connection nodes is stored in said one of said nonvolatile bit storage elements associated therewith and a recall operation wherein a respective voltage at each of said bitline connection nodes and said inverse bitline connection nodes is set on the basis of said data bit stored in said one of said nonvolatile bit storage elements associated therewith.

10. The semiconductor structure of claim 9 , wherein at least one of said erase gate structure, said select gate structure and said control gate structure comprises an electrically conductive metal.

11. The semiconductor structure of claim 9 , wherein each of said erase gate structure, said select gate structure and said control gate structure comprises said electrically conductive metal, said electrically conductive metal comprising tungsten.

12. The semiconductor structure of claim 9 , wherein said control gate structure comprises a portion above said source region.

13. The semiconductor structure of claim 9 , wherein said erase gate structure of said first nonvolatile bit storage element and said erase gate structure of said second nonvolatile bit storage element are arranged on opposite sides of said source region.

14. The semiconductor structure of claim 9 , wherein each of said first and second nonvolatile bit storage elements comprises a tunnel layer arranged at a side of said floating gate structure facing said erase gate structure.

15. The semiconductor structure of claim 9 , further comprising circuitry comprising at least one of a logic circuit and a static random access memory circuit, said circuitry comprising:

a field effect transistor, said field effect transistor comprising one of a high-k metal gate structure and a polysilicon silicon oxynitride gate structure;

wherein said high-k metal gate structure comprises a gate insulation layer comprising a high-k dielectric material having a greater dielectric constant than silicon dioxide and a gate electrode comprising a metal; and

wherein said polysilicon silicon oxynitride gate structure comprises a gate insulation layer comprising silicon oxynitride and a gate electrode comprising polysilicon.