Thin strain relaxed buffers with multilayer film stacks
A semiconductor structure can include a substrate and a substrate layer. The substrate can be formed of silicon and the substrate layer can be formed of silicon germanium. Above the substrate and under the substrate layer there can be provided a multilayer substructure. The multilayer substructure can include a first layer and a second layer. The first layer can be formed of a first material and the second layer can be formed of second material. A method can include forming a multilayer substructure on a substrate, annealing the multilayer substructure, and forming a substrate layer on the multilayer substructure.
1. A method comprising:
forming a multilayer substructure on a substrate;
annealing the multilayer substructure at a temperature of a greater than 800 degrees C.; and
wherein the multilayer substructure includes one or more first layer and one or more second layer, the one or more first layer formed of a first material, the one or more second layer formed of a second material different from a material of the one or more first layer, and each of the first material and the second material is selected from the group consisting of silicon (Si), silicon germanium (SiGe), silicon with carbon (Si:C), and silicon germanium with carbon (SiGe:C); and
forming a substrate layer on the multilayer substructure.
2. The method of claim 1 , wherein the annealing includes annealing at a temperature of between about 950 degrees C. and about 1000 degrees C.
3. The method of claim 1 , wherein the method includes doping one or more layer of the multilayer substructure with a light atom implant.
4. The method of claim 1 , wherein the method includes doping one or more layer of the multilayer substructure with a light atom implant selected from the group consisting of He and H.
5. The method of claim 1 , wherein the method is further characterized by one or more of the following selected from the group consisting of (a) each of the one or more first layer and the one or more second layer has a thickness of about 20 nm or less, and (b) each of the one or more first layer and the one or more second layer has a thickness of about 10 nm or less.
6. The method of claim 1 , wherein the multilayer substructure includes one or more third layer, the one or more third layer being formed of a material different from a material of the one or more first layer and the one or more second layer.
7. The method of claim 1 , wherein the method is further characterized by one or more of the following selected from the group consisting of (a) the multilayer substructure includes one or more layer formed of SiGe:C or Si:C having an atomic percent of germanium of between about 0% and about 40%, (b) the multilayer substructure includes one or more layer formed of SiGe:C having an atomic percent of germanium of between about 20% and about 25%, (c) the multilayer substructure includes one or more layer formed of SiGe:C or Si:C having an atomic percent of carbon of between about 0% and about 1.5%, and (d) the multilayer substructure includes one or more layer formed of SiGe:C or Si:C having an atomic percent of carbon of between about 0.4% and about 0.6%.
8. A method comprising:
forming a multilayer substructure on a substrate;
annealing the multilayer substructure;
forming a substrate layer on the multilayer substructure; and
wherein the method is further characterized by one or more of the following selected from the group consisting of (a) the multilayer substructure includes one or more layer formed of SiGe:C or Si:C having an atomic percent of germanium of between about 0% and about 40%, (b) the multilayer substructure includes one or more layer formed of SiGe:C having an atomic percent of germanium of between about 20% and about 25%, (c) the multilayer substructure includes one or more layer formed of SiGe:C or Si:C having an atomic percent of carbon of between about 0% and about 1.5%, and (d) the multilayer substructure includes one or more layer formed of SiGe:C or Si:C having an atomic percent of carbon of between about 0.4% and about 0.6%.
9. A method comprising:
forming a multilayer substructure on a substrate;
annealing the multilayer substructure at a temperature of a greater than 800 degrees C.;
forming a substrate layer on the multilayer substructure;
wherein the multilayer substructure includes one or more first layer and one or more second layer, the one or more first layer formed of a first material, the one or more second layer formed of a second material different from a material of the one or more first layer; and
wherein the method is further characterized by one or more of the following selected from the group consisting of (a) each of the one or more first layer and the one or more second layer has a thickness of about 20 nm or less, and (b) each of the one or more first layer and the one or more second layer has a thickness of about 10 nm or less.
10. The method of claim 8 , wherein the method includes doping one or more layer of the multilayer substructure with a light atom implant.
11. The method of claim 8 , wherein the method includes doping one or more layer of the multilayer substructure with a light atom implant selected from the group consisting of He and H.
12. The method of claim 8 , wherein the multilayer substructure includes one or more third layer, the one or more third layer being formed of a material different from a material of the one or more first layer and the one or more second layer.
13. The method of claim 9 , wherein the method includes doping one or more layer of the multilayer substructure with a light atom implant.
14. The method of claim 9 , wherein the method includes doping one or more layer of the multilayer substructure with a light atom implant selected from the group consisting of He and H.
15. The method of claim 9 , wherein the multilayer substructure includes one or more third layer, the one or more third layer being formed of a material different from a material of the one or more first layer and the one or more second layer.