Method for manufacturing a semiconductor device
The improvement of the reliability of a semiconductor device having a split gate type MONOS memory is implemented. An ONO film and a second polysilicon film are sequentially formed so as to fill between a first polysilicon film and a dummy gate electrode. Then, the dummy gate electrode is removed. Then, the top surfaces of the first and second polysilicon films are polished, thereby to form a memory gate electrode formed of the second polysilicon film at the sidewall of a control gate electrode formed of the first polysilicon film via the ONO film. As a result, the memory gate electrode high in perpendicularity of the sidewall, and uniform in film thickness is formed.
1. A semiconductor device comprising:
a semiconductor substrate;
a capacitor element formed on a main surface of the semiconductor substrate,
the capacitor element including:
a first conductor film having first patterns extending in a first direction and a second pattern which is spaced from the first patterns in a plan view;
a second conductor film having a third pattern extending in the first direction and being disposed between the first patterns of the first conductor film in the plan view, and having a fourth pattern which is continuously formed with the third pattern and is disposed along a side surface of the second pattern of the first conductor film in the plan view;
a first insulating film as a dielectric film of the capacitor element formed on the main surface of the semiconductor substrate and disposed between the first patterns of the first conductor film and the third pattern of the second conductor film respectively; and
a first plug formed over the second pattern of the first conductor film and the fourth pattern of the second conductor film, the first plug electrically connecting the second pattern of the first conductor film with the fourth pattern of the second conductor film;
wherein the first patterns of the first conductor film are electrically coupled to each other and act as one side electrode of the capacitor element,
wherein the third pattern of the second conductor film is electrically coupled to the fourth pattern of the second conductor film and acts as the other side electrode of the capacitor element, and
wherein a width of the second pattern of the first conductor film is wider than that of each of the first patterns of the first conductor film in a second direction substantially orthogonal to the first direction.
2. The semiconductor device according to claim 1 ,
wherein the first patterns and the second pattern are formed of the same layer.
3. The semiconductor device according to claim 1 ,
wherein the third pattern and the fourth pattern are formed of the same layer.
4. The semiconductor device according to claim 1 ,
wherein the first conductor film has a fifth pattern extending in the second direction and is spaced from the second pattern in the plan view, and
wherein the fifth pattern of the first conductor film is commonly connected to one end of portions of the first patterns.
5. The semiconductor device according to claim 1 ,
wherein the first plug has a shape with a pair of longer sides extending in the first direction in the plan view.
6. The semiconductor device according to claim 5 ,
wherein a portion of the first insulating film is disposed between the second pattern of the first conductor film and the fourth pattern of the second conductor film in the plan view, and
wherein the plug extends over the portion of the first insulating film.