Transistor structure having multiple n-type and/or p-type elongated regions intersecting under common gate
A semiconductor structure includes a semiconductor substrate, at least one first elongated region of n-type or p-type, and at least one other second elongated region of the other of n-type or p-type, the first and second elongated regions crossing such that the first elongated region and the second elongated region intersect at a common area, and a shared gate structure over each common area.
1. A semiconductor structure, comprising:
a semiconductor substrate;
at least one elongated region of one of p-type and n-type;
at least two other elongated regions, wherein the at least two other elongated regions are an opposite type to the at least one elongated region of one of p-type and n-type;
at least one common area comprising an intersection of the at least one elongated region and the at least two other elongated regions; and
a shared gate structure over the at least one common area, wherein the semiconductor structure is configured to act as an inverter;
wherein an added impurities level of the at least one elongated region and the at least two other elongated regions is less in the at least one common area than outside the at least one common area.
2. The semiconductor structure of claim 1 , wherein the at least one elongated region and the at least two other elongated regions are situated in the substrate.
3. The semiconductor structure of claim 1 , further comprising a plurality of semiconductor fins coupled to the substrate, wherein the at least one elongated region and the at least two other elongated regions are situated in a different fin of the plurality of fins.
4. The semiconductor structure of claim 1 , wherein the at least one elongated region has a different width than the at least two other elongated regions.
5. The semiconductor structure of claim 1 , wherein the shared gate structure comprises a dummy gate structure.
6. The semiconductor structure of claim 1 , wherein the shared gate structure comprises a conductive gate structure.
7. The semiconductor structure of claim 6 , wherein the conductive gate structure comprises a single mid-gap work function material.
8. The semiconductor structure of claim 1 , wherein the at least one elongated region comprises one elongated region, wherein the at least two other elongated regions comprise two other elongated regions, and wherein one end of the elongated region and corresponding ends of the two other elongated regions outside the common area are electrically shorted.
9. The semiconductor structure of claim 8 , comprising an array of the semiconductor structures.
10. The semiconductor structure of claim 1 , wherein the at least one elongated region and the at least two other elongated regions comprise epitaxial semiconductor material.