Methods of forming integrated circuit package with thermally conductive pillar
Embodiments of the present disclosure relate to an integrated circuit (IC) package, including a molding compound positioned on a first die and laterally adjacent to a stack of dies positioned on the first die. The stack of dies electrically couples the first die to an uppermost die, and a thermally conductive pillar extends through the molding compound from the first die to an upper surface of the molding compound. The thermally conductive pillar is electrically isolated from the stack of dies and the uppermost die. The thermally conductive pillar laterally abuts and contacts the molding compound.
1. A method of forming an integrated circuit (IC) package, the method comprising:
mounting a plurality of metal contacts on a first die, the first die including a plurality of connecting vias coupled to the plurality of metal contacts, wherein mounting the plurality of metal contacts on the first die includes:
coupling the first die having the plurality of connecting vias to a temporary wafer, the plurality of metal contacts being positioned between the first die and the temporary wafer; and
removing portions of the first die to expose the plurality of connecting vias, such that an upper surface of the first die is substantially coplanar with an upper surface of the plurality of connecting vias;
forming a thermally conductive pillar on the first die and laterally displaced from the plurality of connecting vias;
forming a stack of dies on the plurality of connecting vias, such that the stack of dies is laterally displaced from the thermally conductive pillar;
forming a molding compound on the first die, such that the molding compound laterally and electrically isolates the thermally conductive pillar from the stack of dies, wherein the molding compound laterally abuts and contacts the thermally conductive pillar after being formed; and
dicing the thermally conductive pillar and the stack of dies from a wafer structure.
2. The method of claim 1 , further comprising removing the temporary wafer from the plurality of metal contacts.
3. The method of claim 1 , wherein the thermally conductive pillar comprises one of copper (Cu) or aluminum (Al).
4. The method of claim 1 , wherein the molding compound comprises a resinous material having one of silicon dioxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ) therein.
5. The method of claim 1 , wherein forming the molding compound on the first die includes:
forming the molding compound on the first die, the thermally conductive pillar, and the stack of dies; and
planarizing the molding compound such that an upper surface of the molding compound is substantially coplanar with an upper surface of the thermally conductive pillar and the stack of dies.
6. The method of claim 1 , wherein forming the thermally conductive pillar includes electroplating the thermally conductive pillar to the first die.
7. A method of forming an integrated circuit (IC) package, the method comprising:
mounting a plurality of metal contacts on a first die, the first die including a plurality of connecting vias coupled to the plurality of metal contacts, wherein mounting the plurality of metal contacts on the first die includes:
coupling the first die having the plurality of connecting vias to a temporary wafer, the plurality of metal contacts being positioned between the first die and the temporary wafer; and
removing portions of the first die to expose the plurality of connecting vias, such that an upper surface of the first die is substantially coplanar with an upper surface of the plurality of connecting vias;
electroplating a thermally conductive pillar onto the first die, wherein the thermally conductive pillar is laterally displaced from the plurality of connecting vias;
forming a stack of dies on the plurality of connecting vias, such that the stack of dies is laterally displaced from the thermally conductive pillar; and
forming a molding compound on the first die, such that the molding compound laterally and electrically isolates the thermally conductive pillar from the stack of dies, wherein the molding compound laterally abuts and contacts the thermally conductive pillar after being formed.
8. The method of claim 7 , further comprising removing the temporary wafer from the plurality of metal contacts.
9. The method of claim 7 , wherein the thermally conductive pillar comprises one of copper (Cu) or aluminum (Al).
10. The method of claim 7 , wherein the molding compound comprises a resinous material having one of silicon dioxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ) therein.
11. The method of claim 7 , further comprising dicing the thermally conductive pillar and the stack of dies from a wafer structure.
12. A method of forming an integrated circuit (IC) package, the method comprising:
mounting a plurality of metal contacts on a first die, the first die including a plurality of connecting vias coupled to the plurality of metal contacts, wherein mounting the plurality of metal contacts on the first die includes:
coupling the first die having the plurality of connecting vias to a temporary wafer, the plurality of metal contacts being positioned between the first die and the temporary wafer, and
removing portions of the first die to expose the plurality of connecting vias, such that an upper surface of the first die is substantially coplanar with an upper surface of the plurality of connecting vias;
forming a thermally conductive pillar on the first die and laterally displaced from the plurality of connecting vias;
forming a stack of dies on the plurality of connecting vias, such that the stack of dies is laterally displaced from the thermally conductive pillar; and
forming a molding compound on the first die, such that the molding compound laterally and electrically isolates the thermally conductive pillar from the stack of dies, wherein the molding compound laterally abuts and contacts the thermally conductive pillar after being formed.
13. The method of claim 12 , further comprising removing the temporary wafer from the plurality of metal contacts.
14. The method of claim 12 , wherein the thermally conductive pillar comprises one of copper (Cu) or aluminum (Al).
15. The method of claim 12 , wherein the molding compound comprises a resinous material having one of silicon dioxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ) therein.
16. The method of claim 12 , wherein forming the molding compound on the first die includes:
forming the molding compound on the first die, the thermally conductive pillar, and the stack of dies; and
planarizing the molding compound such that an upper surface of the molding compound is substantially coplanar with an upper surface of the thermally conductive pillar and the stack of dies.
17. The method of claim 12 , wherein forming the thermally conductive pillar includes electroplating the thermally conductive pillar to the first die.
18. The method of claim 12 , further comprising dicing the thermally conductive pillar and the stack of dies from a wafer structure.