Tall single-fin FIN-type field effect transistor structures and methods
Disclosed are methods of forming improved fin-type field effect transistor (FINFET) structures and, particularly, relatively tall single-fin FINFET structures that provide increased drive current over conventional single-fin FINFET structures. The use of such a tall single-fin FINFET provides significant area savings over a FINFET that requires multiple semiconductor fins to achieve the same amount of drive current. Furthermore, since only a single fin is used, only a single leakage path is present at the bottom of the device. Thus, the disclosed FINFET structures can be incorporated into a cell in place of multi-fin FINFETs in order to allow for cell height scaling without violating critical design rules or sacrificing performance.
1. An integrated circuit structure comprising:
a first transistor comprising:
a first semiconductor fin comprising a first channel region positioned laterally between first recessed source/drain regions, wherein a width of the first semiconductor fin at the first channel region is less than a width of the first semiconductor fin at the first recessed source/drain regions;
a first metal gate adjacent to a first top surface and first opposing sides of the first semiconductor fin at the first channel region, wherein the first metal gate comprises an end that abuts a dielectric-filled gate cut trench;
first epitaxial source/drain regions above and immediately adjacent to the first recessed source/drain regions, wherein a width of the first epitaxial source/drain regions is greater than the width of the first semiconductor fin at the first recessed source/drain regions; and
first wrap-around metal plugs adjacent to top and side surfaces of the first epitaxial source/drain regions.
2. The integrated circuit structure of claim 1 , further comprising a silicide layer immediately adjacent to the top and side surfaces of the first epitaxial source/drain regions, the first wrap-around metal plugs comprising a metal layer covering the silicide layer.
3. The integrated circuit structure of claim 1 , wherein the width of the first semiconductor fin at the first channel region is approximately equal to a gate length of the first metal gate divided by 2.5.
4. The integrated circuit structure of claim 1 , wherein the first wrap-around metal plugs abut dielectric-filled plug cut trenches and wherein the dielectric-filled plug cut trenches are filled with a different dielectric material than the dielectric-filled gate cut trench.
5. The integrated circuit structure of claim 1 , further comprising a second transistor adjacent to the first transistor, the second transistor comprising a second metal gate in end to end alignment with the first metal gate and being separated from the first metal gate by the dielectric-filled gate cut trench.
6. The integrated circuit structure of claim 5 , wherein a distance between the dielectric-filled gate cut trench and the first semiconductor fin is greater than 15 nm.
7. The integrated circuit structure of claim 5 , further comprising a dielectric sidewall spacer having a first portion adjacent to the first metal gate and a second portion adjacent to the second metal gate, wherein the dielectric-filled gate cut trench physically separates the first portion from the second portion.
8. The integrated circuit structure of claim 7 , wherein the dielectric sidewall spacer and the dielectric-filled gate cut trench comprise different dielectric materials.
9. An integrated circuit structure comprising:
a first transistor comprising:
a first semiconductor fin comprising a first channel region positioned laterally between first recessed source/drain regions, wherein a width of the first semiconductor fin at the first channel region is less than a width of the first semiconductor fin at the first recessed source/drain regions;
a first metal gate adjacent to a first top surface and first opposing sides of the first semiconductor fin at the first channel region;
first epitaxial source/drain regions above and immediately adjacent to the first recessed source/drain regions, wherein a width of the first epitaxial source/drain regions is greater than the width of the first semiconductor fin at the first recessed source/drain regions; and
first wrap-around metal plugs adjacent to top and side surfaces of the first epitaxial source/drain regions; and
a second transistor comprising:
a second semiconductor fin parallel to the first semiconductor fin, the second semiconductor fin comprising a second channel region positioned laterally between second recessed source/drain regions, wherein a width of the second semiconductor fin at the second channel region is less than a width of the second semiconductor fin at the second recessed source/drain regions;
a second metal gate adjacent to a second top surface and second opposing sides of the second semiconductor fin at the second channel region, wherein the second metal gate is in end to end alignment with the first metal gate and separated from the first metal gate by a dielectric-filled gate cut trench;
second epitaxial source/drain regions above and immediately adjacent to the second recessed source/drain regions, wherein a width of the second epitaxial source/drain regions is greater than the width of the second semiconductor fin at the second recessed source/drain regions; and
second wrap-around metal plugs adjacent to top and side surfaces of the second epitaxial source/drain regions.
10. The integrated circuit structure of claim 9 , further comprising:
a first silicide layer immediately adjacent to the top and side surfaces of the first epitaxial source/drain regions, the first wrap-around metal plugs comprising a first metal layer covering the first silicide layer; and
a second silicide layer immediately adjacent to the top and side surfaces of the second epitaxial source/drain regions, the second wrap-around metal plugs comprising a second metal layer covering the second silicide layer.
11. The integrated circuit structure of claim 9 , wherein the width of the first semiconductor fin at the first channel region is approximately equal to a first gate length of the first metal gate divided by 2.5, wherein the width of the second semiconductor fin at the second channel region is approximately equal to a second gate length of the second metal gate divided by 2.5, and wherein the first gate length is approximately equal to the second gate length.
12. The integrated circuit structure of claim 9 , further comprising dielectric-filled plug cut trenches between and abutting adjacent wrap-around plugs of adjacent transistors, wherein the dielectric-filled plug cut trenches are filled with a different dielectric material than the dielectric-filled gate cut trench.
13. The integrated circuit structure of claim 9 , wherein distances between the dielectric-filled gate cut trench and the first semiconductor fin and between the dielectric-filled gate cut trench and the second semiconductor fin are greater than 15 nm.
14. The integrated circuit structure of claim 9 , further comprising a dielectric sidewall spacer having a first portion adjacent to the first metal gate and a second portion adjacent to the second metal gate, wherein the dielectric-filled gate cut trench physically separates the first portion from the second portion.
15. The integrated circuit structure of claim 14 , wherein the dielectric sidewall spacer and the dielectric-filled gate cut trench comprise different dielectric materials.
16. An integrated circuit structure comprising:
a first transistor comprising:
a first semiconductor fin comprising a first channel region positioned laterally between first recessed source/drain regions, wherein a width of the first semiconductor fin at the first channel region is less than a width of the first semiconductor fin at the first recessed source/drain regions;
a first metal gate adjacent to a first top surface and first opposing sides of the first semiconductor fin at the first channel region;
first epitaxial source/drain regions above and immediately adjacent to the first recessed source/drain regions, wherein a width of the first epitaxial source/drain regions is greater than the width of the first semiconductor fin at the first recessed source/drain regions; and,
first wrap-around metal plugs adjacent to top and side surfaces of the first epitaxial source/drain regions;
a second transistor comprising:
a second semiconductor fin parallel to the first semiconductor fin, the second semiconductor fin comprising a second channel region positioned laterally between second recessed source/drain regions, wherein a width of the second semiconductor fin at the second channel region is less than a width of the second semiconductor fin at the second recessed source/drain regions;
a second metal gate adjacent to a second top surface and second opposing sides of the second semiconductor fin at the second channel region, wherein the second metal gate is in end to end alignment with the first metal gate and separated from the first metal gate by a dielectric-filled gate cut trench;
second epitaxial source/drain regions above and immediately adjacent to the second recessed source/drain regions, wherein a width of the second epitaxial source/drain regions is greater than the width of the second semiconductor fin at the second recessed source/drain regions; and,
second wrap-around metal plugs adjacent to top and side surfaces of the second epitaxial source/drain regions;
a dielectric sidewall spacer having a first portion adjacent to the first metal gate and a second portion adjacent to the second metal gate, wherein the first portion is physically separated from the second portion by the dielectric-filled gate cut trench; and
an interlayer dielectric layer positioned laterally adjacent to the dielectric sidewall spacer, wherein at least two of the dielectric sidewall spacer, the dielectric-filled gate cut trench and the interlayer dielectric layer comprise different dielectric materials.
17. The integrated circuit structure of claim 16 , wherein the width of the first semiconductor fin at the first channel region is approximately equal to a first gate length of the first metal gate divided by 2.5, wherein the width of the second semiconductor fin at the second channel region is approximately equal to a second gate length of the second metal gate divided by 2.5, and wherein the first gate length is approximately equal to the second gate length.
18. The integrated circuit structure of claim 16 , further comprising dielectric-filled plug cut trenches between and abutting adjacent wrap-around plugs of adjacent transistors, wherein the dielectric-filled plug cut trenches are filled with a different dielectric material than the dielectric-filled gate cut trench.
19. The integrated circuit structure of claim 16 , wherein distances between the dielectric-filled gate cut trench and the first semiconductor fin and between the dielectric-filled gate cut trench and the second semiconductor fin are greater than 15 nm.
20. The integrated circuit structure of claim 16 , wherein the dielectric sidewall spacer and the dielectric-filled gate cut trench comprise any of silicon nitride, silicon carbon nitride and silicon boron carbon nitride and wherein the interlayer dielectric layer comprises silicon dioxide.