Semiconductor memory device, method of controlling read preamble signal thereof, and data transmission system
A system, includes a controller comprising a plurality of first external terminals configured to supply a command and an address, and communicate a data, and communicate a strobe signal related to the data; and a semiconductor memory device including a plurality of second external terminals corresponding to the plurality of first external terminals, at least one of the plurality of first external terminals and at least one of the plurality of second external terminals each being capable of supplying an information specifying a length of a preamble of the strobe signal before the semiconductor memory device communicates the data between the controller and the semiconductor memory device, the semiconductor memory device further including a preamble register configured to be capable of storing the information.
1. A controller, comprising:
a first external terminal configured to output a data strobe signal to a semiconductor device, the data strobe signal changing to a first logic level during a preamble period of time to indicate an initiation of a data transfer;
a second external terminal configured to output a data signal to the semiconductor device; and
a plurality of third external terminals configured to output a mode register command to the semiconductor memory device, the mode register command indicating a first period of time, the first period of time being a period of time during the preamble period for which the data strobe signal remains at the first logic level.
2. The controller of claim 1 , wherein the first time period is equal to the preamble period.
3. The controller of claim 1 , wherein the first time period is less than the preamble period and wherein subsequent to the first time period, the data strobe signal clocks to a second logic level.
4. The controller of claim 3 , wherein the data strobe signal clocks to the second logic level for a second period of time during the preamble period, the second period of time being shorter than the first period of time.
5. The controller of claim 1 , wherein the controller comprises a memory control unit configured to generate the mode register command.
6. A memory system comprising:
a controller; and
a semiconductor memory device;
the controller comprising:
a first external terminal configured to output a data strobe signal to the semiconductor device, the data strobe signal changing to a first logic level during a preamble period of time to indicate an initiation of a data transfer;
a second external terminal configured to output a data signal to the semiconductor device; and
a plurality of third external terminals configured to output a mode register command to the semiconductor memory device, the mode register command indicating a first period of time, the first period of time being a period of time during the preamble period for which the data strobe signal remains at the first logic level.
7. The system of claim 6 , wherein the first time period is equal to the preamble period.
8. The system of claim 6 , wherein the first time period is less than the preamble period and wherein subsequent to the first time period, the data strobe signal clocks to a second logic level.
9. The system of claim 8 , wherein the data strobe signal clocks to the second logic level for a second period of time during the preamble period, the second period of time being shorter than the first period of time.
10. The system of claim 6 , wherein the controller comprises a memory control unit configured to generate the mode register command.
11. A method for operating a controller, the method comprising:
a first external terminal of the controller outputting a data strobe signal to a semiconductor device, the data strobe signal changing to a first logic level during a preamble period of time to indicate an initiation of a data transfer;
a second external terminal of the controller outputting a data signal to the semiconductor device; and
a plurality of third external terminals of the controller outputting a mode register command to the semiconductor memory device, the mode register command indicating a first period of time, the first period of time being a period of time during the preamble period for which the data strobe signal remains at the first logic level.
12. The method of claim 11 , wherein the first time period is equal to the preamble period.
13. The method of claim 11 , wherein the first time period is less than the preamble period and wherein subsequent to the first time period, the data strobe signal clocks to a second logic level.
14. The method of claim 13 , wherein the data strobe signal clocks to the second logic level for a second period of time during the preamble period, the second period of time being shorter than the first period of time.
15. The method of claim 11 , further comprising a memory control unit of the controller generating the mode register command.