IP Library Granted Patent US 11,140,343
Granted Patent B1
US 11,140,343 · App. 15/929,729 · Granted Oct 5, 2021

Image sensors having an adjustable current source for column settling speedup

Inventor: Shankar Ramakrishnan (Bangalore, IN)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H04N5/3698H04N5/378H04N5/3745
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Quick Facts
Patent No.
US 11,140,343
App. No.
15/929,729
Granted
Oct 5, 2021
Kind
B1
Abstract

An image sensor may include an array of imaging pixels arranged in rows and columns. Each column of imaging pixels may be coupled to a respective column output line. Each column output line may be coupled to readout circuitry that includes an adjustable current source, sample and hold circuitry, and slew rate sensing and current source control circuitry. To decrease the settling time of the column output line, the slew rate sensing and current source control circuitry may increase the magnitude of a bias current provided by the adjustable current source when the slew rate of the output voltage is above a threshold. When the slew rate of the output voltage is below the threshold, the bias current may revert to a lower magnitude to conserve power.

Claims (57)

1. An image sensor comprising:

imaging pixels;

a column output line that is coupled to a column of the imaging pixels and that is configured to provide an output voltage;

an adjustable current source that is coupled to the column output line; and

control circuitry that is configured to control the adjustable current source based on a slew rate of the output voltage, wherein the adjustable current source is configured to provide a bias current at a first magnitude when the slew rate is below a threshold.

2. The image sensor defined in claim 1 , wherein the adjustable current source is configured to provide the bias current at a second magnitude that is greater than the first magnitude when the slew rate is above the threshold.

3. The image sensor defined in claim 1 , wherein the control circuitry is configured to increase a magnitude of the bias current provided by the adjustable current source in response to the slew rate exceeding the threshold.

4. The image sensor defined in claim 3 , wherein the control circuitry is configured to assert a transistor in the adjustable current source to increase the magnitude of the bias current provided by the adjustable current source.

5. The image sensor defined in claim 1 , wherein the image sensor further comprises:

sample and hold circuitry that is configured to sample the output voltage.

6. The image sensor defined in claim 1 , wherein the output voltage is associated with a selected one of the imaging pixels in the column of the imaging pixels.

7. The image sensor defined in claim 1 , wherein the adjustable current source comprises first and second transistors coupled in series between the column output line and ground and wherein the first and second transistors have respective first and second gate terminals that are both coupled to a first bias voltage supply terminal.

8. The image sensor defined in claim 7 , wherein the adjustable current source further comprises a cascode transistor that is coupled between the first transistor and the column output line.

9. The image sensor defined in claim 7 , wherein the adjustable current source further comprises a third transistor that has:

a first terminal coupled to a first node that is interposed between the first and second transistors;

a second terminal coupled to ground; and

a third gate terminal that receives a control signal from the control circuitry.

10. The image sensor defined in claim 9 , wherein the control circuitry comprises a source follower transistor that has a fourth gate terminal that is coupled to the column output line.

11. The image sensor defined in claim 10 , wherein the control circuitry further comprises:

a fourth transistor coupled between the source follower transistor and a second node;

a first capacitor coupled between the second node and ground;

a second capacitor coupled to the second node;

a fifth transistor coupled between the second node and a second bias voltage supply terminal;

a sixth transistor coupled between the second capacitor and the second bias voltage supply terminal; and

a seventh transistor coupled between the second capacitor and ground.

12. The image sensor defined in claim 11 , wherein the control circuitry further comprises:

an eighth transistor coupled between a drain terminal of the source follower transistor and ground, wherein the eighth transistor has a fifth gate terminal that is coupled to the first bias voltage supply terminal; and

a ninth transistor coupled between a source terminal of the source follower transistor and ground, wherein the ninth transistor has a sixth gate terminal that is coupled to a third node and wherein the third node is interposed between the source follower transistor and the eighth transistor.

13. An image sensor comprising:

imaging pixels;

a column output line that is coupled to a column of the imaging pixels and that is configured to provide an output voltage;

an adjustable current source that is coupled to the column output line; and

control circuitry that is configured to control the adjustable current source based on a slew rate of the output voltage, wherein the adjustable current source comprises first and second transistors coupled in series between the column output line and ground and wherein the first and second transistors have respective first and second gate terminals that are both coupled to a first bias voltage supply terminal.

14. The image sensor defined in claim 13 , wherein the adjustable current source further comprises a cascode transistor that is coupled between the first transistor and the column output line.

15. The image sensor defined in claim 13 , wherein the adjustable current source further comprises a third transistor that has:

a first terminal coupled to a first node that is interposed between the first and second transistors;

a second terminal coupled to ground; and

a third gate terminal that receives a control signal from the control circuitry.

16. The image sensor defined in claim 15 , wherein the control circuitry comprises a source follower transistor that has a fourth gate terminal that is coupled to the column output line.

17. The image sensor defined in claim 16 , wherein the control circuitry further comprises:

a fourth transistor coupled between the source follower transistor and a second node;

a first capacitor coupled between the second node and ground;

a second capacitor coupled to the second node;

a fifth transistor coupled between the second node and a second bias voltage supply terminal;

a sixth transistor coupled between the second capacitor and the second bias voltage supply terminal; and

a seventh transistor coupled between the second capacitor and ground.

18. The image sensor defined in claim 17 , wherein the control circuitry further comprises:

an eighth transistor coupled between a drain terminal of the source follower transistor and ground, wherein the eighth transistor has a fifth gate terminal that is coupled to the first bias voltage supply terminal; and

a ninth transistor coupled between a source terminal of the source follower transistor and ground, wherein the ninth transistor has a sixth gate terminal that is coupled to a third node and wherein the third node is interposed between the source follower transistor and the eighth transistor.

19. The image sensor defined in claim 18 , wherein the control circuitry further comprises:

an inverter having an input terminal that is coupled to the third node; and

a latch circuit having a first input coupled to an output of the inverter, a second input, and an output that provides the control signal to the third gate terminal.

20. An image sensor comprising:

imaging pixels;

a column output line that is coupled to a column of the imaging pixels and that is configured to provide an output voltage;

an adjustable current source that is coupled to the column output line; and

control circuitry that is configured to increase a magnitude of a bias current provided by the adjustable current source in response to a slew rate of the output voltage being greater than a threshold.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL 053613, FRAME 0621 Recorded Aug 17, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064618/0942 →
SECURITY INTEREST Recorded Aug 27, 2020
From: FAIRCHILD SEMICONDUCTOR CORPORATION; SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 053613/0621 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 19, 2020
From: RAMAKRISHNAN, SHANKAR
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 052698/0203 →
Priority Claims (1)
IN 202011014251 · Mar 31, 2020 · national