LASER CONTACT ABLATION FOR SEMICONDUCTOR PACKAGES AND RELATED METHODS
Implementations of a semiconductor substrate may include a plurality of die including at least one contact; and a plurality of portions of an encapsulant on a surface of the semiconductor substrate, wherein each portion of the plurality of portions extends immediately above a plane of the at least one contact.
1 . A semiconductor substrate comprising:
a plurality of die comprising at least one exposed contact directly coupled to a first side of each of the plurality of die, the first side opposing a second side of the plurality of die directly coupled with a backmetal layer; and
a plurality of portions of an encapsulant on a surface of the semiconductor substrate, wherein each portion of the plurality of portions extends immediately above a plane of the at least one exposed contact.
2 . The semiconductor substrate of claim 1 , wherein the plurality of portions of encapsulant are formed through laser ablating the encapsulant originally over the at least one exposed contact of the plurality of die.
3 . The semiconductor substrate of claim 2 , wherein the laser ablating further comprises spot ablation.
4 . The semiconductor substrate of claim 2 , wherein the laser ablating further comprises scanning ablation.
5 . The semiconductor substrate of claim 2 , wherein the laser ablating further comprises bulk ablation.
6 . The semiconductor substrate of claim 2 , wherein the laser ablating further comprises multi-pass ablation.
7 . (canceled)
8 . A method of forming a semiconductor package comprising:
forming a plurality of electrical connectors on a first side of a wafer, the first side opposing a second side of the wafer configured to directly couple with a backmetal layer;
applying a mold compound to the first side of the wafer, wherein the mold compound encapsulates the plurality of electrical connectors; and
exposing the plurality of electrical connectors through the mold compound by ablating the mold compound immediately above each electrical connector of the plurality of electrical connectors with a laser.
9 . The method of claim 8 , wherein exposing the plurality of electrical connectors through the mold compound by ablating the mold compound with a laser further comprises spot ablation over the plurality of electrical connectors.
10 . The method of claim 8 , wherein exposing the plurality of electrical connectors through the mold compound by ablating the mold compound with a laser further comprises scanning ablation over the plurality of electrical connectors.
11 . The method of claim 8 , wherein exposing the plurality of electrical connectors through the mold compound by ablating the mold compound with a laser further comprises bulk ablation over the plurality of electrical connectors.
12 . The method of claim 8 , wherein exposing the plurality of electrical connectors through the mold compound by ablating the mold compound with a laser further comprises multi-pass ablation over the plurality of electrical connectors in multiple passes.
13 . A semiconductor package comprising:
at least one electrical contact comprising a perimeter, the at least one electrical contact directly coupled to a first side of a die opposing a second side of the die directly coupled with a backmetal layer; and
a mold compound raised above a largest planar area of the contact immediately around the perimeter of the at least one electrical contact;
wherein the perimeter of the at least one electrical contact is exposed through the mold compound.
14 . The semiconductor package of claim 13 , wherein the at least one electrical contact is exposed by ablating the mold compound over the largest planar area.
15 . The semiconductor package of claim 14 , wherein the ablating further comprises spot ablation over the largest planar area of the contact around the perimeter of the at least one electrical contact.
16 . The semiconductor package of claim 14 , wherein the ablating further comprises scanning ablation over the largest planar area of the contact around the perimeter of the at least one electrical contact.
17 . The semiconductor package of claim 14 , wherein the ablating further comprises bulk ablation over the largest planar area of the contact around the perimeter of the at least one electrical contact.
18 . The semiconductor package of claim 14 , wherein the ablating further comprises multi-pass ablation over the largest planar area of the contact around the perimeter of the at least one electrical contact.
19 . The semiconductor package of claim 13 , wherein the raising of the mold compound is formed through laser ablating over the at least one electrical contact.