Method for forming carbon rich silicon-containing films
Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O 2 plasma.
1. A method of forming a silicon dioxide film on a microelectronic device substrate, comprising exposing said substrate to
(i) a silicon precursor compound having the Formula (I)
wherein R 1 , R 2 , and R 3 are independently chosen from hydrogen or C 1 -C 6 alkyl, and each X and each Y, are independently chosen from hydrogen, halo, C 1 -C 6 alkyl, C 1 -C 6 alkylamino, C 1 -C 6 dialkylamino, and C 1 -C 6 alkylhydrazido; and
(ii) a co-reactant chosen from ammonia, nitrous oxide and oxygen, under vapor deposition conditions, wherein said silicon oxycarbonitride film possesses a pre-selected atomic percentage of carbon of from about 5 to about 60%, to form a silicon oxycarbonitride film,
followed by treatment of said silicon oxycarbonitride film with oxygen plasma, to afford said silicon dioxide film.
2. The method of claim 1 , wherein the pre-selected atomic percentage of carbon is from about 40 to about 60%.
3. The method of claim 1 , wherein the pre-selected atomic percentage of carbon is from about 40 to about 45%.
4. The method of claim 1 , wherein the pre-selected atomic percentage of carbon is from about 45 to about 50%.
5. The method of claim 1 , wherein the pre-selected atomic percentage of carbon is from about 50 to about 55%.
6. The method of claim 1 , wherein the pre-selected atomic percentage of carbon is from about 55 to about 60%.
7. The method of claim 1 , wherein X and Y are chosen from halo, methyl, and propyl.
8. The method of claim 1 , wherein the compound of Formula (I) is
9. The method of claim 1 , wherein the co-reactant comprises ammonia.
10. The method of claim 1 , wherein the co-reactant comprises nitrous oxide.
11. The method of claim 1 wherein the co-reactant comprises oxygen.
12. The method of claim 1 , wherein the co-reactant comprises any combination of at least two of oxygen, ammonia, and nitrous oxide.