IP Library Granted Patent US 11,201,182
Granted Patent B2
US 11,201,182 · App. 16/886,325 · Granted Dec 14, 2021

Embedded image sensor semiconductor packages and related methods

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Quick Facts
Patent No.
US 11,201,182
App. No.
16/886,325
Granted
Dec 14, 2021
Kind
B2
Abstract

An embedded image sensor package including a transparent cover having a first side and an opposing second side. A first layer couples over the second side of the transparent cover and has an opening. An electrically conductive layer couples in or over the first layer and electrically couples with one or more electrical contacts exposed on an outer surface of the package. An image sensor chip having a first side with an image sensor and an opposing second side electrically couples with the electrically conductive layer at the first side of the image sensor chip. The image sensor chip couples over the first layer so the first side of the image sensor chip faces the second side of the transparent cover through the opening. The image sensor chip, first layer, and transparent cover at least partially define a cavity hermetically sealed using an underfill material. The package includes no wirebonds.

Claims (33)

1. An embedded image sensor package, comprising:

a first layer coupled over a transparent cover, the first layer comprising an opening therein;

an electrically conductive layer coupled one of in or over the first layer;

a second layer coupled over the electrically conductive layer, the second layer comprising an opening therein;

a plurality of vias formed in the second layer;

an image sensor chip within the opening of the second layer, the image sensor chip electrically coupled with the electrically conductive layer, the image sensor chip coupled over the first layer so that the image sensor chip faces the transparent cover through the opening; and

an underfill material within the opening in the second layer, the underfill material separating the image sensor chip from the second layer;

wherein the electrically conductive layer is electrically coupled with one or more electrical contacts exposed on an outer surface of the package through the plurality of vias formed in the second layer; and

wherein the image sensor chip, the first layer, and the transparent cover at least partially define a cavity that is hermetically sealed using the underfill material.

2. The package of claim 1 , wherein a side of the second layer is level with a side of the image sensor chip opposite a side of the image sensor chip adjacent to the cavity.

3. The package of claim 1 , wherein the first layer is directly coupled to the transparent cover.

4. The package of claim 1 , wherein the image sensor chip is electrically coupled with the electrically conductive layer using one or more bumps.

5. The package of claim 1 , further comprising a thermal dissipation metal coupled with the image sensor chip and exposed on the outer surface of the package through a third layer of the package.

6. The package of claim 1 , further comprising an embedded device electrically coupled with the image sensor chip and mechanically coupled within one or more layers of the package, the embedded device comprising one of a passive component or a processor.

7. The package of claim 1 , further comprising a third layer coupled over the image sensor and an entirety of the second layer, the third layer comprising conductive portions coupled over the plurality of vias formed in the second layer.

8. The package of claim 7 , wherein the underfill material is directly coupled to the electrically conductive layer, the second layer, the third layer, and the image sensor chip.

9. An embedded image sensor package, comprising:

a first layer coupled over a transparent cover, the first layer comprising an opening therein;

an electrically conductive layer coupled one of in or over the first layer;

a second layer coupled over the electrically conductive layer, the second layer comprising an opening therein;

a plurality of vias formed in the second layer;

a third layer coupled over the second layer;

a plurality of vias formed in the third layer;

an image sensor chip within the opening of the second layer, the image sensor chip electrically coupled with the electrically conductive layer, the image sensor chip coupled over the first layer so that the image sensor chip faces the transparent cover through the opening; and

an underfill material within the opening in the second layer, the underfill material separating the image sensor chip from the second layer;

wherein the image sensor chip, the first layer, and the transparent cover at least partially define a cavity that is hermetically sealed using the underfill material.

10. The package of claim 9 , wherein a side of the second layer is level with a side of the image sensor chip opposite a side of the image sensor chip adjacent to the cavity.

11. The package of claim 9 , wherein the first layer is directly coupled to the transparent cover.

12. The package of claim 9 , wherein the image sensor chip is electrically coupled with the electrically conductive layer using one or more bumps.

13. The package of claim 9 , further comprising a thermal dissipation metal coupled with the image sensor chip and exposed on an outer surface of the package through the third layer of the package.

14. The package of claim 9 , further comprising an embedded device electrically coupled with the image sensor chip and mechanically coupled within one or more layers of the package, the embedded device comprising one of a passive component or a processor.

15. The package of claim 9 , wherein the third layer comprises conductive portions coupled over the plurality of vias formed in the second layer.

16. The package of claim 15 , wherein the underfill material is directly coupled to the electrically conductive layer, the second layer, the third layer, and the image sensor chip.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL 053613, FRAME 0621 Recorded Aug 17, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064618/0942 →
SECURITY INTEREST Recorded Aug 27, 2020
From: FAIRCHILD SEMICONDUCTOR CORPORATION; SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 053613/0621 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 28, 2020
From: WU, WENG-JIN
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 052779/0557 →