Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)
In a general aspect, method of producing an insulated-gate bipolar transistor (IGBT) device can include forming a termination structure in an inactive region. The inactive region at least partial surround an active region. The method can also include forming a trench extending along a longitudinal axis in the active region. A first mesa can define a first sidewall of the trench, and a second mesa can define a second sidewall of the trench. The first mesa and the second mesa can be parallel with the trench. The method can further include forming, in at least a portion of the first mesa, an active segment of the IGBT device, and, forming, in at least a portion of the second mesa, an inactive segment of the IGBT device.
1. A method comprising:
forming, in a substrate, a termination region of an insulated-gate bipolar transistor (IGBT) device, the termination region being included in an inactive region of the IGBT device, the inactive region at least partially surrounding an active region of the IGBT device;
forming a trench in the substrate, the trench extending along a longitudinal axis in the active region of the IGBT device, the trench having:
a first sidewall included in a first mesa disposed in the active region of the IGBT device; and
a second sidewall included in a second mesa disposed in the active region of the IGBT device, the first mesa and the second mesa being parallel with the trench;
forming, in at least a portion of the first mesa in the active region of the IGBT device, an active segment of the IGBT device; and
forming, in at least a portion of the second mesa in the active region of the IGBT device, an inactive segment of the IGBT device, the inactive segment being defined by a dielectric material.
2. The method of claim 1 , wherein the active segment is a first active segment, the inactive segment is a first inactive segment, the at least a portion of the first mesa includes a first portion of the first mesa and the at least a portion of the second mesa includes a first portion of the second mesa, the method further comprising:
forming a second active segment of the IGBT device in a second portion of the second mesa in the active region of the IGBT device; and
forming a second inactive segment in a second portion of the first mesa in the active region of the IGBT device.
3. The method of claim 2 , wherein:
the first active segment of the IGBT device is a first emitter segment of the IGBT device; and
the second active segment of the IGBT device is a second emitter segment of the IGBT device.
4. The method of claim 1 , wherein the first mesa is an active mesa included in the active region and the second mesa is an inactive mesa included in the active region.
5. The method of claim 1 , wherein forming the inactive segment includes thermally oxidizing the at least a portion of the second mesa.
6. The method of claim 1 , wherein forming the inactive segment includes:
removing the at least a portion of the second mesa; and
replacing the at least a portion of the second mesa with the dielectric material.
7. The method of claim 6 , wherein the dielectric material includes a deposited dielectric material.
8. The method of claim 7 , wherein the dielectric material further includes an air gap enclosed in the deposited dielectric material.
9. A method comprising:
implanting, in a substrate, a termination implant of an insulated-gate bipolar transistor (IGBT) device, the termination implant being included in an inactive region of the IGBT device, the inactive region at least partially surrounding an active region of the IGBT device;
etching a trench in the substrate, the trench extending along a longitudinal axis in the active region of the IGBT device, the trench having:
a first sidewall included in a first mesa disposed in the active region of the IGBT device; and
a second sidewall included in a second mesa disposed in the active region of the IGBT device, the first mesa and the second mesa being parallel with the trench;
forming, in at least a portion of the first mesa in the active region of the IGBT device, an active segment of the IGBT device, the forming the active segment including:
implanting, in the at least a portion of the first mesa, an implant of a first conductivity type to form a well region; and
implanting, in the well region, an emitter implant of a second conductivity type, the second conductivity type being opposite the first conductivity type; and
forming, in at least a portion of the second mesa in the active region of the IGBT device, an inactive segment of the IGBT device, the forming the inactive segment including:
etching the substrate to form a plurality of semiconductor fingers along the second sidewall; and
oxidizing the plurality of semiconductor fingers to form a dielectric material, the dielectric material defining the inactive segment.
10. The method of claim 9 , further comprising forming a conductive electrode in the trench, the conductive electrode being a gate electrode of the active segment of IGBT device.
11. The method of claim 9 , wherein the active segment is a first active segment, the inactive segment is a first inactive segment, the at least a portion of the first mesa includes a first portion of the first mesa and the at least a portion of the second mesa includes a first portion of the second mesa, the method further comprising:
forming a second active segment of the IGBT device in a second portion of the second mesa in the active region of the IGBT device; and
forming a second inactive segment in a second portion of the first mesa in the active region of the IGBT device.
12. The method of claim 9 , wherein the first mesa is an active mesa included in the active region and the second mesa is an inactive mesa included in the active region.
13. The method of claim 9 , wherein the first mesa is inhomogeneous along the longitudinal axis.
14. The method of claim 9 , wherein the second mesa is inhomogeneous along the longitudinal axis.
15. A method comprising:
implanting, in a substrate, a termination implant of an insulated-gate bipolar transistor (IGBT) device, the termination implant being included in an inactive region of the IGBT device, the inactive region at least partially surrounding an active region of the IGBT device;
etching a trench in the substrate, the trench extending along a longitudinal axis in the active region of the IGBT device, the trench having:
a first sidewall included in a first mesa disposed in the active region of the IGBT device; and
a second sidewall included in a second mesa disposed in the active region of the IGBT device, the first mesa and the second mesa being parallel with the trench;
forming, in at least a portion of the first mesa in the active region of the IGBT device, an active segment of the IGBT device, the forming the active segment including:
implanting, in the at least a portion of the first mesa, an implant of a first conductivity type to form a well region; and
implanting, in the well region, an emitter implant of a second conductivity type, the second conductivity type being opposite the first conductivity type; and
forming, in at least a portion of the second mesa in the active region of the IGBT device, an inactive segment of the IGBT device, the forming the inactive segment including:
removing the at least a portion of the second mesa; and
replacing the at least a portion of the second mesa with a dielectric material.
16. The method of claim 15 , wherein the replacing the at least a portion of the second mesa with the dielectric material includes depositing an oxide material.
17. The method of claim 16 , wherein the replacing the at least a portion of the second mesa with the dielectric material further includes enclosing an air gap in the oxide material.
18. The method of claim 16 , wherein the active segment is a first active segment, the inactive segment is a first inactive segment, the at least a portion of the first mesa includes a first portion of the first mesa and the at least a portion of the second mesa includes a first portion of the second mesa, the method further comprising:
forming a second active segment of the IGBT device in a second portion of the second mesa in the active region of the IGBT device; and
forming a second inactive segment in a second portion of the first mesa in the active region of the IGBT device.
19. The method of claim 16 , wherein the first mesa is an active mesa included in the active region and the second mesa is an inactive mesa included in the active region.
20. The method of claim 16 , wherein the first mesa is inhomogeneous along the longitudinal axis.