Fan-out wafer level packaging of semiconductor devices
In a general aspect, a fan-out wafer level package (FOWLP) can include a semiconductor die having an active surface, a backside surface, a plurality of side surfaces, each side surface of the plurality of side surfaces extending between the active surface and the backside surface, a plurality of conductive bumps disposed on the active surface, and an insulating layer disposed on a first portion of the active surface between the conductive bumps. The FOWLP can also include a molding compound encapsulating the backside surface, the plurality of side surfaces, and a second portion of the active surface between the conductive bumps and a perimeter edge of the active surface. The FOWLP can also include a signal distribution structure disposed on the conductive bumps, the insulating layer and the molding compound. The signal distribution structure can be configured to provide respective electrical connections to the plurality of conductive bumps.
1. A fan-out wafer level package (FOWLP) semiconductor device, comprising:
a semiconductor die having:
an active surface;
a backside surface opposite the active surface;
a plurality of side surfaces, each side surface of the plurality of side surfaces extending between the active surface and the backside surface; and
a plurality of conductive bumps disposed on the active surface;
an insulating layer disposed on a first portion of the active surface and excluded from a second portion of the active surface, the first portion of the active surface being disposed between the plurality of conductive bumps, the second portion of the active surface being disposed between the plurality of conductive bumps and a perimeter edge of the active surface, the insulating layer respectively contacting, at most, two sides of conductive bumps of the plurality of conductive bumps;
a molding compound, the molding compound:
encapsulating the backside surface, and the plurality of side surfaces; and
partially encapsulating the active surface, such that the second portion of the active surface is encapsulated in the molding compound and the molding compound is excluded from the first portion of the active surface; and
a signal distribution structure disposed on the plurality of conductive bumps, disposed on the insulating layer, and disposed on the molding compound, the signal distribution structure being configured to provide respective electrical connections to the plurality of conductive bumps.
2. The FOWLP semiconductor device of claim 1 , wherein a thickness of the molding compound on the active surface is greater than or equal to five micrometers.
3. The FOWLP semiconductor device of claim 1 , wherein a width of the molding compound on the active surface between the plurality of conductive bumps and the perimeter edge of the active surface is greater than or equal to five micrometers.
4. The FOWLP semiconductor device of claim 1 , wherein the signal distribution structure includes:
a dielectric layer disposed on the insulating layer, disposed on the plurality of conductive bumps, and disposed on the molding compound, the dielectric layer having a planar surface;
a plurality of via openings through the dielectric layer; and
a plurality of electrical connections to the plurality of conductive bumps, each of the plurality of electrical connections being disposed on the planar surface of the dielectric layer and disposed in a respective via opening of the plurality of via openings.
5. The FOWLP semiconductor device of claim 4 , wherein the plurality of conductive bumps is a first plurality of conductive bumps and the dielectric layer is a first dielectric layer, the signal distribution structure further including:
a second dielectric layer disposed on the plurality of electrical connections and the first dielectric layer;
a plurality of via openings through the second dielectric layer; and
a second plurality of conductive bumps disposed in respective via openings of the plurality of via openings of the second dielectric layer, and disposed on respective electrical connections of the plurality of electrical connections.
6. The FOWLP semiconductor device of claim 1 , wherein the insulating layer includes a polyimide material.
7. The FOWLP semiconductor device of claim 1 , wherein the second portion of the active surface, at least partially, surrounds the first portion of the active surface.
8. The FOWLP semiconductor device of claim 1 , wherein the backside surface is a ground surface of the semiconductor die, the semiconductor die further including a metal layer disposed on the ground surface.
9. A fan-out wafer level package (FOWLP) semiconductor device, comprising:
a semiconductor die having:
an active surface;
a backside surface opposite the active surface;
a plurality of side surfaces, each side surface of the plurality of side surfaces extending between the active surface and the backside surface; and
a plurality of conductive bumps disposed on the active surface;
an insulating layer disposed on a first portion of the active surface and excluded from a second portion of the active surface, the first portion of the active surface being disposed between the plurality of conductive bumps, the second portion of the active surface being disposed between the plurality of conductive bumps and a perimeter edge of the active surface, the insulating layer respectively contacting, at most, two sides of conductive bumps of the plurality of conductive bumps;
a molding compound, the molding compound:
encapsulating the backside surface, and the plurality of side surfaces; and
partially encapsulating the active surface, such that the second portion of the active surface is encapsulated in the molding compound and the molding compound is excluded from the first portion of the active surface, a thickness of the molding compound on the active surface being greater than or equal to five micrometers; and
a signal distribution structure configured to provide respective electrical connections to the plurality of conductive bumps,
the signal distribution structure including:
a dielectric layer disposed on the insulating layer;
a plurality of via openings through the dielectric layer; and
a plurality of electrical connections to the plurality of conductive bumps to the plurality of via openings.
10. The FOWLP semiconductor device of claim 9 , wherein the plurality of conductive bumps is a first plurality of conductive bumps and the dielectric layer is a first dielectric layer, the signal distribution structure further including:
a second dielectric layer disposed on the plurality of electrical connections and the first dielectric layer;
a plurality of via openings through the second dielectric layer; and
a second plurality of conductive bumps disposed in respective via openings of the plurality of via openings of the second dielectric layer, and disposed on respective electrical connections of the plurality of electrical connections.
11. The FOWLP semiconductor device of claim 9 , wherein a width of the molding compound on the active surface between the plurality of conductive bumps and the perimeter edge of the active surface is greater than or equal to five micrometers.
12. The FOWLP semiconductor device of claim 9 , wherein the insulating layer includes a polyimide material.
13. The FOWLP semiconductor device of claim 9 , wherein the second portion of the active surface, at least partially, surrounds the first portion of the active surface.
14. The FOWLP semiconductor device of claim 9 , wherein the backside surface is a ground surface of the semiconductor die, the semiconductor die further including a metal layer disposed on the ground surface.
15. A fan-out wafer level package (FOWLP) semiconductor device, comprising:
a semiconductor die having:
an active surface;
a backside surface opposite the active surface;
a plurality of side surfaces, each side surface of the plurality of side surfaces extending between the active surface and the backside surface; and
a plurality of conductive bumps disposed on the active surface;
an insulating layer disposed on a first portion of the active surface and excluded from a second portion of the active surface, the first portion of the active surface being disposed between the plurality of conductive bumps, the second portion of the active surface being disposed between the plurality of conductive bumps and a perimeter edge of the active surface, the insulating layer respectively contacting, at most, two sides of conductive bumps of the plurality of conductive bumps;
a molding compound, the molding compound:
encapsulating the backside surface, and the plurality of side surfaces; and
partially encapsulating the active surface, such that a second portion of the active surface is encapsulated in the molding compound and the molding compound is excluded from the first portion of the active surface, a thickness of the molding compound on the active surface being greater than or equal to five micrometers, and a width of the molding compound on the active surface between the plurality of conductive bumps and the perimeter edge of the active surface being greater than or equal to five micrometers, the molding compound on the second portion of the active surface having a thickness that corresponds with the thickness of the insulating layer and the thickness of the plurality of conductive bumps; and
a signal distribution structure configured to provide respective electrical connections to the plurality of conductive bumps.
16. The FOWLP semiconductor device of claim 15 , wherein the signal distribution structure includes:
a dielectric layer disposed on the insulating layer, disposed on the plurality of conductive bumps, and disposed on the molding compound, the dielectric layer having a planar surface;
a plurality of via openings through the dielectric layer; and
a plurality of electrical connections to the plurality of conductive bumps, each of the plurality of electrical connections being disposed on the planar surface of the dielectric layer and disposed in a respective via opening of the plurality of via openings.
17. The FOWLP semiconductor device of claim 16 , wherein the plurality of conductive bumps is a first plurality of conductive bumps and the dielectric layer is a first dielectric layer, the signal distribution structure further including:
a second dielectric layer disposed on the plurality of electrical connections and the first dielectric layer;
a plurality of via openings through the second dielectric layer; and
a second plurality of conductive bumps disposed in respective via openings of the plurality of via openings of the second dielectric layer, and disposed on respective electrical connections of the plurality of electrical connections.
18. The FOWLP semiconductor device of claim 15 , wherein the insulating layer includes a polyimide material.
19. The FOWLP semiconductor device of claim 15 , wherein the second portion of the active surface, at least partially, surrounds the first portion of the active surface.
20. The FOWLP semiconductor device of claim 15 , wherein the backside surface is a ground surface of the semiconductor die, the semiconductor die further including a metal layer disposed on the ground surface.