Laser-based redistribution and multi-stacked packages
A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
1. A method of making a semiconductor device, comprising:
providing a first package layer;
forming a first shielding layer over the first package layer;
patterning the first shielding layer to form a redistribution layer;
disposing an electrical component over the redistribution layer;
depositing an encapsulant over the electrical component;
forming a second shielding layer over the encapsulant; and
patterning the second shielding layer.
2. The method of claim 1 , further including patterning the first shielding layer and second shielding layer using a laser.
3. The method of claim 1 , further including patterning the second shielding layer to include an antenna.
4. The method of claim 1 , further including forming a conductive via through the encapsulant, wherein the electrical component is coupled to the second shielding layer through the conductive via.
5. The method of claim 1 , further including:
forming a patterned cavity in the encapsulant; and
patterning the second shielding layer to match the patterned cavity.
6. The method of claim 1 , further including:
patterning the second shielding layer to include a contact pad; and
disposing a board-to-board (B2B) connector over the contact pad.
7. A method of making a semiconductor device, comprising:
providing a first package layer;
forming a patterned cavity in the first package layer;
forming a first shielding layer over the first package layer;
patterning the first shielding layer to form a redistribution layer matching the patterned cavity;
forming a second package layer utilizing the redistribution layer;
forming a second shielding layer over the second package layer; and
patterning the second shielding layer.
8. The method of claim 7 , further including patterning the first shielding layer and second shielding layer using a laser.
9. The method of claim 7 , further including patterning the second shielding layer to include an antenna.
10. The method of claim 7 , further including coupling the first package layer to the second package layer through the redistribution layer.
11. The method of claim 7 , further including disposing a board-to-board (B2B) connector over the second shielding layer.
12. The method of claim 7 , further including forming the redistribution layer to include a ground plane.
13. A method of making a semiconductor device, comprising:
providing a first package layer;
forming a first redistribution layer over the first package layer;
depositing a second encapsulant over the first redistribution layer;
forming a second redistribution layer over the second encapsulant;
depositing a first encapsulant over the first redistribution layer and second encapsulant;
forming a first shielding layer over the first encapsulant; and
patterning the first shielding layer.
14. The method of claim 13 , further including forming the first redistribution layer by inkjet or electrohydrodynamic jet printing.
15. The method of claim 13 , further including forming the first redistribution layer embedded into the first package layer.
16. The method of claim 13 , wherein the first redistribution layer and second redistribution layer are formed using inkjet or electrohydrodynamic jet printing.
17. The method of claim 13 , further including patterning the first shielding layer to form an antenna.
18. A method of making a semiconductor device, comprising:
providing a first package layer;
disposing a 5G transceiver within the first package layer or second package layer;
forming a redistribution layer over the first package layer;
forming a second package layer over the redistribution layer;
forming an antenna over the second package layer; and
coupling the 5G transceiver to the antenna.
19. The method of claim 18 , further including forming the redistribution layer embedded in the first package layer.
20. The method of claim 18 , further including forming the antenna embedded in the second package layer.
21. The method of claim 18 , further including forming a conductive via through the first package layer to couple the first package layer to the redistribution layer.
22. The method of claim 18 , further including:
forming a first shielding layer around the first package layer; and
forming a second shielding layer around the first shielding layer and first package layer.