Semiconductor device and method of forming vertical interconnect structure for PoP module
A semiconductor device has a substrate and a first light sensitive material formed over the substrate. A plurality of first conductive posts is formed over the substrate by patterning the first light sensitive material and filling the pattern with a conductive material. A plurality of electrical contacts is formed over the substrate and the conductive posts are formed over the electrical contacts. A first electric component is disposed over the substrate between the first conductive posts. A plurality of second conductive posts is formed over the first electrical component by patterning a second light sensitive material and filling the pattern with conductive material. A first encapsulant is deposited over the first electrical component and conductive posts. A portion of the first encapsulant is removed to expose the first conductive posts. A second electrical component is disposed over the first electrical component and covered with a second encapsulant.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first light sensitive material over the substrate;
forming a plurality of first conductive posts over the substrate by patterning the first light sensitive material and filling the pattern with conductive material;
disposing a first electrical component over the substrate between the first conductive posts;
depositing a first encapsulant over the first electrical component and conductive posts;
removing a portion of the first encapsulant to expose the first conductive posts; and
singulating through the first conductive posts to expose a side surface of the first conductive posts, wherein the exposed side surface of the first conductive posts extends between a first surface of the first encapsulant and a second surface of the first encapsulant opposite the first surface of the first encapsulant.
2. The method of claim 1 , further including forming a plurality of second conductive posts over the first electrical component.
3. The method of claim 2 , wherein forming the plurality of second conductive posts includes:
forming a second light sensitive material over the first electrical component; and
forming the plurality of second conductive posts over the first electrical component by patterning the second light sensitive material and filling the pattern with conductive material.
4. The method of claim 1 , further including disposing a second electrical component over the first electrical component.
5. The method of claim 4 , further including disposing a second encapsulant over the second electrical component.
6. A method of making a semiconductor device, comprising:
providing a substrate;
forming a plurality of first conductive posts over the substrate by patterning a first light sensitive material and filling the pattern with conductive material;
disposing a first electrical component over the substrate between the first conductive posts;
depositing a first encapsulant over the first electrical component and conductive posts; and
singulating through the first conductive posts to expose a side surface of the first conductive posts, wherein the exposed side surface of the first conductive posts extends between a first surface of the first encapsulant and a second surface of the first encapsulant opposite the first surface of the first encapsulant.
7. The method of claim 6 , further including
removing a portion of the first encapsulant to expose the first conductive posts.
8. The method of claim 6 , further including forming a plurality of second conductive posts over the first electrical component.
9. The method of claim 8 , wherein forming the plurality of second conductive posts includes:
forming a second light sensitive material over the first electrical component; and
forming the plurality of second conductive posts over the first electrical component by patterning the second light sensitive material and filling the pattern with conductive material.
10. The method of claim 6 , further including disposing a second electrical component over the first electrical component.
11. The method of claim 10 , further including disposing a second encapsulant over the second electrical component.
12. A method of making a semiconductor device, comprising:
providing a substrate;
forming a plurality of first conductive posts over the substrate by patterning a first light sensitive material and filling the pattern with conductive material;
disposing a first electrical component over the substrate between the first conductive posts;
depositing a first encapsulant over the first electrical component and conductive posts; and
singulating through the first conductive posts to expose a side surface of the first conductive posts extending between a first surface of the first encapsulant and a second surface of the first encapsulant opposite the first surface of the first encapsulant.
13. The method of claim 12 , further including removing a portion of the first encapsulant to expose the first conductive posts.
14. The method of claim 12 , further including forming a plurality of second conductive posts over the first electrical component.
15. The method of claim 14 , wherein the plurality of second conductive posts is formed by patterning a second light sensitive material and filling the pattern with conductive material.
16. The method of claim 12 , further including disposing a second electrical component over the first electrical component.
17. The method of claim 16 , further including depositing a second encapsulant over the second electrical component.
18. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first light sensitive material over the substrate;
forming a plurality of first conductive posts over the substrate by patterning the first light sensitive material and filling the pattern with conductive material;
disposing a first electrical component over the substrate;
depositing a first encapsulant over the first electrical component and conductive posts; and
singulating through the first conductive posts to expose a side surface of the first conductive posts between a first surface of the first encapsulant and a second surface of the first encapsulant opposite the first surface of the first encapsulant.
19. The method of claim 18 , further including
removing a portion of the first encapsulant to expose the first conductive posts.
20. The method of claim 18 , further including forming a plurality of second conductive posts over the first electrical component.
21. The method of claim 20 , wherein the plurality of second conductive posts is formed by patterning a second light sensitive material and filling the pattern with conductive material.
22. The method of claim 18 , further including disposing a second electrical component over the first electrical component.
23. The semiconductor device of claim 22 , further including depositing a second encapsulant over the second electrical component.