Double-sided partial molded SIP module
A semiconductor device has a substrate and a first component disposed over a first surface of the substrate. A connector is disposed over the first surface of the substrate. A first encapsulant is deposited over the first component while the connector remains outside of the first encapsulant. A shielding layer is formed over the first encapsulant while the connector remains outside of the shielding layer. A second component is disposed over a second surface of the substrate. A solder bump is disposed over the second surface of the substrate. A second encapsulant is deposited over the second surface of the substrate. An opening is formed through the second encapsulant to expose the solder bump. A solder ball is disposed in the opening. The solder ball and solder bump are reflowed to form a combined solder bump.
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first component over a first surface of the substrate;
disposing a board-to-board (B2B) connector over the first surface of the substrate;
depositing a first encapsulant over the first component while the B2B connector remains outside of the first encapsulant;
disposing a second component over a second surface of the substrate;
disposing a solder bump over the second surface of the substrate;
depositing a second encapsulant over the second surface of the substrate;
forming an opening through the second encapsulant to expose the solder bump;
disposing a solder ball in the opening;
reflowing the solder ball and solder bump to form a combined solder bump;
disposing a can or mask over the B2B connector;
forming a shielding layer over the first encapsulant and the can or mask; and
removing the can or mask after forming the shielding layer.
2. The method of claim 1 , further including disposing the substrate on a film carrier, wherein the can or mask rests on the film carrier while forming the shielding layer.
3. The method of claim 2 , wherein removing the can or mask removes an entirety of the can or mask.
4. The method of claim 2 , wherein the film carrier includes an opening formed through the film carrier under the combined solder bump.
5. The method of claim 1 , further including depositing the first encapsulant into a mold cavity, wherein the first component is within the mold cavity and the B2B connector is outside the mold cavity.
6. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first component and a board-to-board (B2B) connector over a first surface of the substrate;
depositing a first encapsulant over the first component while the B2B connector remains outside of the first encapsulant;
forming a shielding layer over the first encapsulant while the B2B connector remains outside of the first encapsulant;
depositing a second encapsulant over a second surface of the substrate opposite the first surface; and
forming a solder bump through the second encapsulant.
7. The method of claim 6 , further including disposing a can over the B2B connector while forming the shielding layer.
8. The method of claim 7 , further including removing the can after forming the shielding layer.
9. The method of claim 6 , further including depositing the first encapsulant into a mold cavity, wherein the first component is within the mold cavity and the B2B connector is outside the mold cavity.
10. The method of claim 6 , further including:
disposing a third component on the second surface of the substrate; and
depositing the second encapsulant over the third component.
11. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first component over a first surface of the substrate;
disposing a board-to-board (B2B) connector over the first surface of the substrate;
depositing a first encapsulant over the first component;
forming a shielding layer over the first encapsulant;
disposing a solder bump over a second surface of the substrate opposite the first surface;
depositing a second encapsulant over the second surface of the substrate;
forming an opening through the second encapsulant to expose the solder bump;
disposing a solder ball in the opening; and
reflowing the solder ball and solder bump into a combined solder bump.
12. The method of claim 11 , further including disposing a can over the B2B connector while forming the shielding layer.
13. The method of claim 11 , further including leaving a portion of the substrate and the B2B connector exposed from the first encapsulant and shielding layer.
14. The method of claim 11 , further including disposing a semiconductor die over the second surface of the substrate.
15. The method of claim 11 , further including removing a portion of the shielding layer to expose a portion of the substrate.
16. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first component over a first surface of the substrate;
disposing a board-to-board (B2B) connector over the first surface of the substrate;
depositing a first encapsulant over the first component;
forming a shielding layer over the first encapsulant;
disposing a solder bump over a second surface of the substrate;
depositing a second encapsulant over the solder bump;
forming an opening through the second encapsulant to expose the solder bump;
disposing a solder ball in the opening; and
reflowing the solder ball and solder bump into a combined solder bump.
17. The method of claim 16 , further including disposing a can or mask over the B2B connector while the shielding layer is formed.
18. The method of claim 16 , further including leaving a portion of the substrate exposed from the first encapsulant and shielding layer.
19. The method of claim 16 , further including disposing a semiconductor die over the second surface of the substrate.