Electrostatic chuck with embossments that comprise diamond-like carbon and deposited silicon-based material, and related methods
Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including embossments that are made of multiple deposited layers, the layers including diamond-like carbon layers and layers that contain silicon-based materials such as silicon carbide layers.
1. An electrostatic chuck assembly comprising a wafer support surface that comprises a ceramic layer with at least one embossment at an upper surface of the ceramic layer, the at least one embossment comprising multiple layers that include at least two layers of deposited silicon-based material, and at least two diamond-like carbon layers.
2. The assembly of claim 1 , wherein the at least one embossment comprises at least 6 total layers that include at least 3 layers of deposited silicon-based material and at least 3 diamond-like carbon layers, each deposited silicon-based material layer and each diamond-like carbon layer having a thickness in a range from 0.5 to about 3 microns.
3. The assembly of claim 1 , wherein a top layer of the at least one embossment is a diamond-like carbon layer.
4. The assembly of claim 1 , wherein the deposited silicon-based material is selected from silicon nitride (SiN), silicon carbide (SiC), silicon oxide (e.g., silicon dioxide, SiO 2 ), and silicon oxynitride (SiON).
5. The assembly of claim 1 , wherein the at least one embossment consists of alternating layers of the deposited silicon-based material and diamond-like carbon.
6. The assembly of claim 1 , wherein the deposited silicon-based material is silicon carbide.
7. The assembly of claim 1 , wherein the at least one embossment includes multiple layers of silicon carbide and diamond-like carbon, each silicon carbide layer and each diamond-like carbon layer having a thickness in a range from 1 to 5 microns.
8. The assembly of claim 1 , further comprising multiple embossments that each comprise multiple layers that include at least two silicon carbide layers and at least two diamond-like carbon layers.
9. The assembly of claim 1 , wherein the at least one embossment includes from 4 to 100 total silicon carbide layers and diamond-like carbon layers.
10. The assembly of claim 1 , wherein the at least one embossment has a diameter in a range from 0.75 to 1.5 millimeters.
11. The assembly of claim 1 , wherein the at least one embossment has a height in a range from 5 to 100 microns.
12. The assembly of claim 1 , wherein the diamond-like carbon contains atomic dopant to increase electrical conductivity of the at least one embossment.
13. The assembly of claim 1 , further comprising multiple embossments, wherein the embossments cover an area that is equal to from 1 to 10 percent of a total area of the upper surface.
14. The assembly of claim 1 , further comprising multiple embossments, each embossment consisting of from 4 to 100 total silicon carbide layers and diamond-like carbon layers, wherein the embossments cover an area that is equal to from 1 to 10 percent of a total area of the upper surface.
15. A method of preparing an electrostatic chuck assembly that comprises a ceramic layer with at least one embossment at an upper surface of the ceramic layer, the at least one embossment comprising multiple layers that include at least two layers of deposited silicon-based material and at least two diamond-like carbon layers, the method comprising depositing the at least one embossment onto the upper surface by a deposition method.
16. The method of claim 15 , wherein the deposition method is plasma-enhanced chemical vapor deposition.
17. The method of claim 15 , wherein the deposition method deposits the at least two layers of the deposited silicon-based material and the at least two layers of diamond-like carbon through openings in a mask.
18. The method of claim 15 , further comprising depositing multiple embossments by a method of pattern coating, wherein the embossments cover an area that is equal to from 1 to 10 percent of a total area of the upper surface.
19. The method of claim 15 , further comprising depositing multiple embossments by a photolithographic method.
20. The method of claim 15 , further comprising depositing multiple embossments on the upper surface, each embossment consisting of from 4 to 100 total silicon carbide layers and diamond-like carbon layers, wherein the embossments cover an area that is equal to from 1 to 10 percent of a total area of the upper surface.