Method and systems useful for producing aluminum ions
Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.
1. A method of generating aluminum ion in an ion source having an ion source chamber, the method comprising:
in an ion source chamber that contains aluminum dopant source, flowing into the ion source chamber:
fluorine-containing gas selected from BF 3 , PF 3 , PF 5 , GeF 4 , XeF 2 , CF 4 B 2 F 4 , SiF 4 , Si 2 F 6 , AsF 3 , AsF 5 , XeF 4 , XeF 6 , WF 6 , MoF 6 , C n F 2n+2 , C n F 2n , C n F 2n−2 , C n H x F 2n+2−x , C n H x F 2n−x , C n H x F 2n−2−x (n=1, 2, 3 . . . , -x=0, 1, 2 . . . ), COF 2 , SF 6 , SF 4 , SeF 6 , NF 3 , N 2 F 4 , HF, F 2 , or a combination thereof, and
hydrogen-containing gas, wherein flowing the hydrogen containing gas to the ion source in an amount that is 10 to 30 percent to a maximum beam current, and
generating aluminum ions within the ion source chamber;
wherein the aluminum dopant source comprises solid aluminum target selected from: aluminum oxide, aluminum carbide, aluminum boride, and a combination of these.
2. The method of claim 1 wherein hydrogen-containing gas and fluorine-containing gas are flowed into the ion source chamber in relative amounts of from 2 to 60 percent (volume) hydrogen-containing gas based on total hydrogen-containing and fluorine-containing gas.
3. The method of claim 1 wherein hydrogen-containing gas and fluorine-containing gas are flowed into the ion source chamber in relative amounts of from 5 to 60 percent (volume) hydrogen-containing gas based on total hydrogen-containing and fluorine-containing gas.
4. The method of claim 1 wherein the flow of hydrogen-containing gas to the ion source as a co-gas extends an operating life of the ion source by at least 10 percent relative to an operating life that would result from comparable operation of the ion source without the hydrogen-containing gas.
5. The method of claim 1 wherein the flow of hydrogen-containing gas to the ion source as a co-gas reduces glitching of the ion source by at least 20 percent relative to an amount of glitching that would result from comparable operation of the ion source without the hydrogen-containing gas.
6. The method of claim 1 comprising generating neutral or ionized fluorine-containing species from the fluorine-containing gas, and reacting the fluorine-containing species with the aluminum target to generate aluminum ion.
7. The method of claim 1 wherein the ion source chamber comprises:
an interior defined by interior surfaces that include sidewalls, a bottom, and a top, and
a cathode and an anti-cathode at the interior,
wherein an interior surface comprises tungsten or molybdenum.
8. The method of claim 7 wherein:
during generating the aluminum ions, non-aluminum ions are also generated, the non-aluminum ions comprising tungsten ion (W + ) or molybdenum (Mo + ), tungsten or molybdenum fluoride ion (WF x + , MoF x + ) (x=1, 2, 3, 4, or 5), or both, and the hydrogen-containing gas reduces an amount of the tungsten ion (W + ) or molybdenum (Mo+), tungsten or molybdenum fluoride ion (WF x + , MoF x + ), or both, that are generated.
9. The method of claim 1 wherein:
the fluorine-containing gas is PF 3 , PF 5 , or GeF 4 , and
the hydrogen-containing gas is H 2 .
10. The method of claim 1 wherein:
the fluorine-containing gas is PF 5 , and
the hydrogen-containing gas is H 2 .
11. The method of claim 1 wherein the hydrogen-containing gas is selected from H 2 , PH 3 , AsH 3 , SiH 4 , B 2 H 6 , CH 4 , NH 3 , GeH 4 , or A x H y (A is any element except H, x, y=1, 2, 3, 4, 5, 6, 7, 8, 8 or 10) and a combination thereof.
12. A method of forming aluminum ion in an ion source chamber, the method comprising:
flowing fluorine-containing gas selected from PF 3 and PF 5 into an ion source chamber that contains aluminum dopant source, and
flowing a hydrogen-containing gas, wherein flowing the hydrogen containing gas to the ion source in an amount that is 10 to 30 percent to a maximum beam current
generating aluminum ion within the ion source chamber;
wherein the aluminum dopant source comprises solid aluminum target selected from: aluminum oxide, aluminum carbide, aluminum boride, and a combination thereof.
13. The method of claim 12 comprising flowing hydrogen-containing gas into the ion source chamber.
14. The method of claim 13 wherein the hydrogen-containing gas is selected from: H 2 , PH 3 , AsH 3 , SiH 4 , B 2 H 6 , CH 4 , NH 3 , GeH 4 , A x H y (A is any element except H, x, y=1, 2, 3, 4, 5, 6, 7, 8, 8 or 10), and a combination thereof.
15. The method of claim 13 comprising flowing PF 5 and the hydrogen-containing gas into the ion source chamber in relative amounts of from 2 to 60 percent (volume) hydrogen-containing gas based on total hydrogen-containing gas and fluorine-containing gas.
16. The method of claim 13 comprising flowing PF 3 and the hydrogen-containing gas into the ion source chamber in relative amounts of from 2 to 60 percent (volume) hydrogen-containing gas based on total hydrogen-containing gas and fluorine-containing gas.
17. The method of claim 12 comprising: generating neutral or ionized fluorine-containing species from the fluorine-containing gas, and reacting the fluorine-containing species with the aluminum dopant source to generate aluminum ion.