EMI shielding for flip chip package with exposed die backside
A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
1. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited over the semiconductor die;
a shielding layer formed on a top surface of the semiconductor die with a portion of a top surface of the encapsulant exposed from the shielding layer, wherein the shielding layer includes,
a stainless steel layer, and
a copper layer formed over the stainless steel layer; and
a heatsink disposed over the shielding layer.
2. The semiconductor device of claim 1 , further including a second shielding layer disposed on a side surface of the semiconductor die between the semiconductor die and encapsulant.
3. The semiconductor device of claim 1 , wherein the stainless steel layer physically contacts the semiconductor die.
4. The semiconductor device of claim 1 , wherein the shielding layer further includes a second stainless steel layer formed over the copper layer.
5. The semiconductor device of claim 1 , further including a solder layer disposed between the shielding layer and heatsink.
6. The semiconductor device of claim 1 , wherein the top surface of the semiconductor die is coplanar to the top surface of the encapsulant.
7. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited over the semiconductor die;
a first shielding layer formed over a top surface of the semiconductor die with a portion of a top surface of the encapsulant exposed adjacent to the first shielding layer; and
a solder layer disposed over the first shielding layer.
8. The semiconductor device of claim 7 , wherein the first shielding layer includes a plurality of layers.
9. The semiconductor device of claim 7 , further including a second shielding layer disposed on a side surface of the semiconductor die between the semiconductor die and encapsulant.
10. The semiconductor device of claim 9 , wherein the first shielding layer is electrically coupled to ground through the second shielding layer.
11. The semiconductor device of claim 9 , wherein the first shielding layer and second shielding layer are formed directly on the semiconductor die.
12. The semiconductor device of claim 7 , wherein the top surface of the semiconductor die is coplanar to the top surface of the encapsulant.
13. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing encapsulant over the semiconductor die;
forming a shielding layer on a top surface of the semiconductor die with a portion of a top surface of the encapsulant exposed adjacent to the shielding layer;
forming a solder layer over the shielding layer; and
disposing a heatsink over the solder layer.
14. The method of claim 13 , further including forming a second shielding layer on a side surface of the semiconductor die prior to depositing the encapsulant.
15. The method of claim 13 , wherein forming the shielding layer includes:
forming a stainless steel layer that physically contacts the semiconductor die; and
forming a copper layer over the stainless steel layer.
16. The method of claim 15 , further including forming a second stainless steel layer over the copper layer.
17. The method of claim 13 , wherein the top surface of the semiconductor die is coplanar to the top surface of the encapsulant.
18. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die; and
forming a first shielding layer over a top surface of the semiconductor die with a portion of a top surface of the encapsulant exposed adjacent to the first shielding layer, wherein forming the first shielding layer includes,
forming a stainless steel layer over the encapsulant, and
forming a copper layer over the stainless steel layer.
19. The method of claim 18 , further including forming a second shielding layer on a side surface of the semiconductor die prior to depositing the encapsulant.
20. The method of claim 19 , wherein the first shielding layer is electrically coupled to ground through the second shielding layer.
21. The method of claim 19 , further including forming the first shielding layer and second shielding layer directly on the semiconductor die.
22. The method of claim 18 , wherein the top surface of the semiconductor die is coplanar to the top surface of the encapsulant.
23. The method of claim 18 , further forming a solder layer over the first shielding layer.