Emi shielding for flip chip package with exposed die backside
A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
1. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited around the semiconductor die;
a conductive layer formed over the encapsulant and semiconductor die;
a solder paste disposed over the conductive layer; and
a heat spreader disposed over the solder paste.
2. The semiconductor device of claim 1 , wherein the conductive layer is formed over a back surface of the semiconductor die.
3. The semiconductor device of claim 1 , further including a second conductive layer formed between the semiconductor die and solder paste.
4. The semiconductor device of claim 1 , further including a substrate, wherein the semiconductor die is disposed over the substrate.
5. The semiconductor device of claim 1 , wherein the heat spreader is bonded to the semiconductor die through the conductive layer and solder paste.
6. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited around the semiconductor die;
a conductive layer formed over the encapsulant and semiconductor die; and
a solder paste disposed over the conductive layer.
7. The semiconductor device of claim 6 , wherein the conductive layer is formed over a back surface of the semiconductor die.
8. The semiconductor device of claim 6 , further including a second conductive layer formed between the semiconductor die and solder paste.
9. The semiconductor device of claim 6 , wherein the encapsulant, conductive layer, and solder include coplanar surfaces.
10. The semiconductor device of claim 6 , further including a substrate, wherein the semiconductor die is disposed over the substrate.
11. The semiconductor device of claim 10 , further including a mold underfill disposed between the substrate and semiconductor die.
12. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant around the semiconductor die;
forming a conductive layer over the encapsulant and semiconductor die;
disposing a solder paste over the conductive layer; and
disposing a heat spreader over the solder paste.
13. The method of claim 12 , further including forming the conductive layer over a back surface of the semiconductor die.
14. The method of claim 12 , further including forming a second conductive layer between the semiconductor die and solder paste.
15. The method of claim 12 , further including disposing the semiconductor die over a substrate.
16. The method of claim 12 , further including reflowing the solder paste to bond the heat spreader to the conductive layer.
17. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant around the semiconductor die;
forming a conductive layer over the encapsulant and semiconductor die; and
disposing a solder paste over the conductive layer.
18. The method of claim 17 , further including forming the conductive layer over a back surface of the semiconductor die.
19. The method of claim 17 , further including forming a second conductive layer between the semiconductor die and solder paste.
20. The method of claim 17 , further including disposing the semiconductor die over a substrate.
21. The method of claim 20 , further including disposing a mold underfill between the semiconductor die and substrate.