Optoelectronic module package
An optoelectronic module. In some embodiments, the optoelectronic module includes a substrate; a digital integrated circuit, on an upper surface of the substrate; a photonic integrated circuit, secured in a pocket of the substrate, the pocket being in the upper surface of the substrate; and an analog integrated circuit, on the photonic integrated circuit.
1. An optoelectronic module, comprising:
a substrate having an upper surface and a pocket formed in the upper surface, the pocket extending from a first end of the substrate toward a second end of the substrate along a first direction;
a digital integrated circuit, on the upper surface of the substrate and spaced apart from the pocket along the first direction;
a photonic integrated circuit, secured in the pocket with an epoxy, the photonic integrated circuit:
extending from a first end to a second end along the first direction,
having a V-groove in an upper surface of the photonic integrated circuit at the first end, and
comprising an optoelectronic component connected to a conductive trace on the photonic integrated circuit and bonded into a cavity in the photonic integrated circuit;
an optical fiber having a first end in the V-groove, the optical fiber extending from the first end of the optical fiber away from the photonic integrated circuit and the substrate;
a fiber lid clamping the optical fiber in the V-groove;
a waveguide, for coupling light between the optical fiber and the optoelectronic component;
an analog integrated circuit secured to the upper surface of the photonic integrated circuit via a plurality of copper pillar bumps;
a heater, in or on the photonic integrated circuit; and
a wire bond between the photonic integrated circuit and the substrate, wherein the wire bond forming forms a portion of a conductive path between a conductive trace on the photonic integrated circuit and a circuit in the digital integrated circuit,
wherein a separation between a first copper pillar bump of the plurality of copper pillar bumps and a second copper pillar bump of the plurality of copper pillar bumps is less than 150 microns.
2. The optoelectronic module of claim 1 , wherein the analog integrated circuit is flip-chip mounted on the photonic integrated circuit.
3. The optoelectronic module of claim 2 , wherein a copper pillar bump of the plurality of copper pillar bumps forms a portion of a conductive path between a circuit in the analog integrated circuit and a conductive trace on the photonic integrated circuit.
4. The optoelectronic module of claim 2 , wherein a copper pillar bump of the plurality of copper pillar bumps forms a portion of a conductive path between a circuit in the analog integrated circuit and a circuit in the digital integrated circuit.
5. The optoelectronic module of claim 2 , further comprising underfill between the analog integrated circuit and the photonic integrated circuit.
6. The optoelectronic module of claim 1 , further comprising a conductive trace in the substrate, the conductive trace forming a portion of a conductive path between a conductive trace on the photonic integrated circuit and a circuit in the digital integrated circuit.
7. The optoelectronic module of claim 1 , wherein the optoelectronic component is a photodetector.
8. The optoelectronic module of claim 1 , wherein the optoelectronic component is a modulator.
9. The optoelectronic module of claim 1 , further comprising a heat sink on the analog integrated circuit and on the digital integrated circuit.
10. The optoelectronic module of claim 9 , further comprising a thermal interface material between the heat sink and the analog integrated circuit.
11. The optoelectronic module of claim 1 , wherein the digital integrated circuit is secured and connected to the substrate by a first array of contacts, and
a lower surface of the substrate has a second array of contacts.
12. The optoelectronic module of claim 11 , wherein the second array of contacts has a coarser pitch than the first array of contacts.