IP Library Granted Patent US 12,585,597
Granted Patent B2
US 12,585,597 · App. 18/747,497 · Granted Mar 24, 2026

Memory with write address delay circuit

Inventors: Lunkai Zhang (Portland, OR); Rasmus Madsen (Skovlunde, DK); Martin Lueker-Boden (Fremont, CA)
Assignee: Sandisk Technologies, Inc.
G06F12/1408G06F12/145G06F13/1689G06F2212/402G06F2212/7201
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Quick Facts
Patent No.
US 12,585,597
App. No.
18/747,497
Granted
Mar 24, 2026
Kind
B2
Abstract

An apparatus includes control circuits configured to connect to a memory structure. The control circuits are configured to receive a write request that includes a logical address with write data corresponding to the logical address, encrypt the write data to obtain encrypted write data and map the logical address to a physical address in the memory structure. The control circuits are further configured to delay output of the physical address by a delay period to align output of the physical address and the encrypted write data.

Claims (37)

1 . An apparatus, comprising:

one or more control circuits configured to connect to a memory structure, the one or more control circuits configured to:

receive a write request that includes a logical address with write data corresponding to the logical address, encrypt the write data to obtain encrypted write data and map the logical address to a physical address in the memory structure, delay output of the physical address by a delay period to align output of the physical address and the encrypted write data.

2 . The apparatus of claim 1 , wherein the control circuits are configured to encrypt the write data in a first period and send the encrypted write data to the memory structure after the first period, map the logical address to the physical address in a second period that is less than the first period and the delay period is equal to or greater than the difference between the first period and the second period.

3 . The apparatus of claim 1 , wherein the one or more control circuits include a logical-to-physical mapping circuit connected in series with a delay circuit.

4 . The apparatus of claim 3 , wherein the one or more control circuits include an encryption circuit connected in parallel with the logical-to-physical mapping circuit and the delay circuit.

5 . The apparatus of claim 3 , wherein the delay circuit includes a First-In First-Out (FIFO) buffer in series with the logical-to-physical mapping circuit to delay output of physical addresses from the logical-to-physical mapping circuit for all logical addresses received in write requests.

6 . The apparatus of claim 5 , wherein the one or more control circuits include a path for logical addresses of read requests, the path bypasses the FIFO buffer such that the logical-to-physical mapping circuit outputs physical addresses for all read requests without the delay period.

7 . The apparatus of claim 1 , wherein the memory structure is one of: Resistive Random Access Memory (ReRAM), Magnetoresistive Random Access Memory (MRAM), Ferroelectric Random Access Memory (FeRAM) or Phase Change Memory (PCM).

8 . The apparatus of claim 7 , wherein the one or more control circuits are located on a control die that is configured to connect to a memory die that includes the memory structure to form an integrated memory assembly.

9 . A method comprising:

receiving a write request with a logical address and write data corresponding to the logical address;

encrypting the write data to generate encrypted write data;

while encrypting the write data, mapping the logical address to a physical address in a nonvolatile memory structure;

applying a delay period to cause the physical address to be sent in parallel with the encrypted write data or later than the encrypted write data; and

subsequently, writing the encrypted write data at the physical address in the nonvolatile memory structure.

10 . The method of claim 9 , further comprising:

subsequent to receiving the write request, receiving a read request with an additional logical address;

while encrypting the write data, mapping the additional logical address to an additional physical address in the nonvolatile memory structure; and

while encrypting the write data, sending the additional physical address to initiate reading at the additional physical address.

11 . The method of claim 10 , further comprising:

reading read data from the additional physical address;

decrypting the read data to generate decrypted read data; and

sending the decrypted read data in response to the read request.

12 . The method of claim 11 , wherein reading the read data from the additional physical address is performed prior to writing the encrypted write data at the physical address.

13 . The method of claim 10 , wherein applying the delay period includes delaying the logical address at an input to a logical-to-physical mapping circuit to delay initiation of mapping the logical address to the physical address.

14 . The method of claim 13 , wherein receiving the read request occurs during the delay period such that mapping the additional logical address occurs earlier than mapping the logical address.

15 . The method of claim 9 , wherein encrypting the write data extends over a first period, mapping the logical address to the physical address extends over a second period that is shorter than the first period and the delay period is equal to or greater than the difference between the first period and the second period.

16 . The method of claim 15 , wherein the second period is a variable period with a range and the delay period is equal to or greater than the difference between the first period and a smallest value of the second period in the range such that the physical address is sent in parallel with the encrypted write data or later than the encrypted write data for all values of the second period within the range.

17 . The method of claim 9 , further comprising:

applying the delay period to cause physical addresses of all write requests to be delayed; and

applying no delay to physical addresses of read requests such that physical addresses of read requests are output a shorter time after receipt than physical addresses of write requests.

18 . A system comprising:

a nonvolatile memory structure; and

means for receiving a write request with a logical address and write data corresponding to the logical address, encrypting the write data to generate encrypted write data, mapping the logical address to a physical address in the nonvolatile memory structure while encrypting the write data and applying a delay period to cause the physical address to be sent in parallel with the encrypted write data or later than the encrypted write data.

19 . The system of claim 18 , wherein the nonvolatile memory structure is one of: Resistive Random Access Memory (ReRAM), Magnetoresistive Random Access Memory (MRAM), Ferroelectric Random Access Memory (FeRAM) or Phase Change Memory (PCM).

20 . The system of claim 18 , wherein the nonvolatile memory structure is located on a memory die and the means for receiving, encrypting, mapping and applying a delay period are located on a control die that is bonded to the memory die to form an integrated memory assembly.

Assignments (4)
SECURITY AGREEMENT Recorded Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →
PARTIAL RELEASE OF SECURITY INTERESTS Recorded Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2024
From: SANDISK TECHNOLOGIES LLC
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 069796/0423 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 19, 2024
From: ZHANG, LUNKAI; MADSEN, RASMUS; LUEKER-BODEN, MARTIN
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 067772/0062 →
Continuity (1)
Related Publication 20250390442A1 · Dec 25, 2025
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