Selector only memory write operation
Technology for programming selector-only memory cells in a cross-point memory structure. The threshold switching memory element may include, but is not limited to, an Ovonic Threshold Switch (OTS). The memory system removes Vth drift in the threshold switching memory elements prior to programming. The Vth drift is removed by applying a first voltage and a second voltage having opposite polarities to all of the SOM cells to be programmed. Then, two programming voltages having the two polarities are applied to program the cells to two states.
1 . An apparatus comprising:
one or more control circuits configured to connected to a cross-point structure having self-selecting memory cells, each self-selecting memory cell having a threshold switching selector, the one or more control circuits configured to:
apply a first signal having a first polarity to a group of memory cells selected for programming, the first signal switches on the threshold switching selectors in a first set of the memory cells;
apply a second signal having a second polarity to the group of memory cells selected for programming, the second signal switches on the threshold switching selectors in a second set of the memory cells;
apply a third signal having the first polarity to a third set of the group of memory cells after applying both the first signal and the second signal to the group of the memory cells, the third signal programs the threshold switching selectors in the third set of the memory cells to a first state; and
apply a fourth signal having the second polarity to a fourth set of the group of memory cells after applying both the first signal and the second signal to the group of the memory cells, the fourth signal programs the threshold switching selectors in the fourth set of the memory cells to a second state.
2 . The apparatus of claim 1 , wherein the one or more control circuits are configured to establish a magnitude of the first signal to create a maximum voltage across the memory cells in the group between a first highest drifted threshold voltage of memory cells in the group that were most recently programmed to the first state and a second highest drifted threshold voltage of memory cells in the group that were most recently programmed to the second state.
3 . The apparatus of claim 1 , wherein the one or more control circuits are configured to establish a magnitude of the first signal to create a maximum voltage across the memory cells in the group at a midpoint between a first highest drifted threshold voltage for memory cells in the group programmed to a low threshold voltage state and second highest drifted threshold voltage for memory cells in the group programmed to a high threshold voltage state.
4 . The apparatus of claim 1 , wherein the first set of the memory cells were most recently programmed to the first state, the first signal has a magnitude and polarity that switches on the threshold switching selectors of memory cells most recently programmed to the first state but does not switch on the threshold switching selectors of memory cells most recently programmed to the second state.
5 . The apparatus of claim 1 , wherein the first signal has a magnitude and polarity to remove drift in threshold voltages of the threshold switching selectors of the first set of the memory cells but does not switch on the threshold switching selectors in the second set of the memory cells.
6 . The apparatus of claim 5 , wherein the second signal has a magnitude and polarity to remove drift in threshold voltages of the threshold switching selectors of the second set of the memory cells that were most recently programmed to the second state.
7 . The apparatus of claim 1 , wherein:
the first signal has a magnitude to demarcate between the first state and the second state; and
the second signal has the magnitude to demarcate between the first state and the second state.
8 . The apparatus of claim 1 , wherein the wherein the one or more control circuits are configured to concurrently apply the third signal to the third set of the group of memory cells and the fourth signal to the fourth set of the group of memory cells.
9 . The apparatus of claim 1 , wherein the one or more control circuits are configured to:
apply the third signal to the third set of the memory cells and the fourth signal to the fourth set of the memory cells without determining memory cell states in response to either the first signal or the second signal.
10 . The apparatus of claim 1 , wherein the first signal and the second signal are voltages having substantially the same magnitude.
11 . The apparatus of claim 1 , wherein the first signal and the second signal are currents having substantially the same magnitude.
12 . A method for operating a cross-point memory structure having self-selecting memory cells, the method comprising:
applying a first read signal to a group of the memory cells that triggers memory cells that were most recently programmed to a first state but does not trigger memory cells were most recently programmed to a second state, the first read signal having a first polarity and creating a first maximum voltage across each particular cell in the group;
applying a second read signal to the group of the memory cells after applying the first read signal to the group, the second read signal having a second polarity opposite the first polarity and creating the first maximum voltage across each particular cell in the group;
applying a first write signal to a first set of the group of memory cells to write the first set to the first state after applying both the first read signal and the second read signal to the group of the memory cells, the first write signal having the first polarity; and
applying a second write signal to a second set of the group of memory cells to write the second set to the second state after applying both the first read signal and the second read signal to the group of the memory cells, the second write signal having the second polarity.
13 . The method of claim 12 , further comprising:
establishing a magnitude of the first read signal to create a maximum voltage across the memory cells in the group between a first highest drifted threshold voltage of memory cells in the group that were most recently programmed to the first state and a second highest drifted threshold voltage of memory cells in the group that were most recently programmed to the second state.
14 . The method of claim 12 , further comprising:
establishing a magnitude of the first read signal to create a maximum voltage across the memory cells in the group at a midpoint between a first highest drifted threshold voltage for memory cells programmed to a low threshold voltage state and second highest drifted threshold voltage for memory cells programmed to a high threshold voltage state.
15 . The method of claim 12 , wherein applying the first write signal to the first set of the group and applying the second write signal to the second set of the group are performed without determining memory cell states in response to either the first read signal or the second read signal.
16 . A memory system comprising:
a cross-point memory structure having first conductive lines, second conductive lines, and memory cells, each memory cell at a junction of one of the first conductive lines and one of the second conductive lines, each memory cell having a threshold switching selector;
one or more control circuits in communication with the cross-point memory structure, the one or more control circuits configured to:
cause a first voltage across each memory cell in a group of memory cells selected for programming, the first voltage having a first maximum magnitude and a first polarity that reduces threshold voltage drift in the threshold switching selectors in memory cells in the group that were most recently programmed to a first state;
cause a second voltage across each memory cell in the group of memory cells following causing the first voltage to the group of memory cells, the second voltage having substantially the first maximum magnitude and a second polarity opposite the first polarity;
cause a third voltage having the first polarity across each memory cell in a first set of memory cells in the group to write the threshold switching selectors in the first set of memory cells to the first state, the third voltage caused after causing both the first voltage and the second voltage; and
cause a fourth voltage having the second polarity across each memory cell in the group in a second set of memory cells in the group to write the threshold switching selectors in the second set of memory cells to a second state, the fourth voltage caused after causing both the first voltage and the second voltage.
17 . The memory system of claim 16 , wherein the one or more control circuits are configured to cause the first maximum magnitude for the first voltage between a first highest drifted threshold voltage of the memory cells most recently programmed to the first state and a second highest drifted threshold voltage of memory cells most recently programmed to the second state.
18 . The memory system of claim 16 , wherein the one or more control circuits are configured to cause the first maximum magnitude for the first voltage at a midpoint between a first highest drifted threshold voltage for memory cells programmed to a low threshold voltage state and second highest drifted threshold voltage for memory cells programmed to a high threshold voltage state.
19 . The memory system of claim 16 , wherein the one or more control circuits are configured to:
cause the first maximum magnitude for the first voltage to refresh drifted threshold voltages of the memory cells most recently programmed to the first state without triggering the threshold switching selector in the memory cells most recently programmed to the second state.
20 . The memory system of claim 16 , wherein the one or more control circuits are configured to:
concurrently cause the third voltage across memory cells in the first set and the fourth voltage across memory cells in the second set.