IP Library Granted Patent US 12,688,869
Granted Patent B2
US 12,688,869 · App. 18/893,605 · Granted Jul 21, 2026

Topological insulator based spin torque oscillator reader

Inventors: Xiaoyong Liu (San Jose, CA); Zhanjie Li (Pleasanton, CA); Quang Le (San Jose, CA); Brian R. York (San Jose, CA); Cherngye Hwang (San Jose, CA); Kuok San Ho (Emerald Hills, CA); Hisashi Takano (Fujisawa, JP)
Assignee: Western Digital Technologies, Inc.
G11B5/3909G11B5/3912G11B5/3932G11B5/3967G11B2005/3996
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Quick Facts
Patent No.
US 12,688,869
App. No.
18/893,605
Filed
Sep 23, 2024
Granted
Jul 21, 2026
Kind
B2
Art Unit
2688
USPC
360/324.2
Abstract

The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.

Claims (48)

1 . A magnetic recording device, comprising:

a magnetic recording head, comprising:

a sensor, comprising:

an antiferromagnetic (AFM) layer disposed at a media facing surface (MFS);

a magnetic tunnel junction (MTJ) structure comprising a free layer; and

a spin orbit torque (SOT) device comprising a bismuth antimony (BiSb) layer;

means for flowing a current through the SOT device while reading data from a magnetic recording media; and

means for measuring frequency of a precession of the free layer, wherein the precession is responsive to a magnetic field generated by the magnetic recording media.

2 . The magnetic recording device of claim 1 , wherein the MTJ structure is disposed over the AFM layer, and wherein the SOT device is disposed over the MTJ structure.

3 . The magnetic recording device of claim 1 , wherein the MTJ structure is disposed over the SOT device, and wherein the AFM layer is disposed over the MTJ structure.

4 . The magnetic recording device of claim 1 , wherein the MTJ structure further comprises a first pinning layer, a Ru layer, and a second pinning layer.

5 . The magnetic recording device of claim 1 , wherein the sensor further comprises a first shield and a second shield, and wherein the AFM layer is disposed adjacent to the second shield.

6 . The magnetic recording device of claim 1 , wherein the sensor further comprises a first shield and a second shield, and wherein the AFM layer is disposed in contact with the first shield.

7 . A magnetic recording device, comprising:

a magnetic recording head, comprising:

a sensor, comprising:

an antiferromagnetic (AFM) layer disposed at a media facing surface (MFS);

a magnetic tunnel junction (MTJ) structure comprising:

a free layer;

a first pinning layer;

a Ru layer; and

a second pinning layer; and

a spin orbit torque (SOT) device comprising:

a first buffer layer;

a bismuth antimony (BiSb) layer disposed on the first buffer layer; and

a second buffer layer disposed on the BiSb layer;

means for flowing a current through the SOT device while reading data from a magnetic recording media; and

means for measuring frequency of a precession of the free layer, wherein the precession is responsive to a magnetic field generated by the magnetic recording media.

8 . The magnetic recording head of claim 7 , further comprising a seed layer disposed between the AFM layer and the MTJ structure.

9 . The magnetic recording device of claim 7 , wherein the MTJ structure is disposed over the AFM layer, and wherein the SOT device is disposed over the MTJ structure.

10 . The magnetic recording device of claim 9 , wherein the sensor further comprises a first shield and a second shield, wherein the AFM layer is disposed on the first shield.

11 . The magnetic recording device of claim 7 , wherein the MTJ structure is disposed over the SOT device, and wherein the AFM layer is disposed over the MTJ structure.

12 . The magnetic recording device of claim 11 , wherein the sensor further comprises a first shield, a capping layer disposed on the AFM layer, and a second shield disposed on the capping layer.

13 . A magnetic recording device, comprising:

a magnetic recording head, comprising:

a sensor, comprising:

an antiferromagnetic (AFM) layer;

a magnetic tunnel junction (MTJ) structure comprising a free layer; and

a spin orbit torque (SOT) device comprising a bismuth antimony (BiSb) layer, the SOT device being disposed in contact with the MTJ structure;

means for flowing a current through the SOT device while reading data from a magnetic recording media; and

means for measuring frequency of a precession of the free layer, wherein the precession is responsive to a magnetic field generated by the magnetic recording media.

14 . The magnetic recording device of claim 13 , wherein the MTJ structure is disposed over the AFM layer.

15 . The magnetic recording device of claim 13 , wherein the SOT device is disposed over the MTJ structure.

16 . The magnetic recording device of claim 13 , wherein the MTJ structure is disposed over the AFM layer, and wherein the SOT device is disposed over the MTJ structure.

17 . The magnetic recording device of claim 13 , wherein the sensor further comprises a first shield and a second shield, and wherein the AFM layer is disposed in contact with the first shield.

18 . The magnetic recording device of claim 13 , wherein the MTJ structure further comprises a first pinning layer, a Ru layer, and a second pinning layer.

19 . The magnetic recording device of claim 13 , wherein the SOT device further comprises one or more buffer layers.

20 . The magnetic recording head of claim 13 , further comprising a seed layer disposed between the AFM layer and the MTJ structure.

Assignments (2)
SECURITY AGREEMENT (SUPPLEMENTAL) Recorded Nov 14, 2024
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 069411/0208 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2024
From: LIU, XIAOYONG; LI, ZHANJIE; LE, QUANG; YORK, BRIAN R.; HWANG, CHERNGYE; HO, KUOK SAN; TAKANO, HISASHI
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 069091/0413 →
Continuity (3)
Division 18244555 · Sep 11, 2023
Division 17828226 · May 31, 2022
Related Publication 20250014595A1 · Jan 9, 2025
References Cited (146)
US 5751521A · Gill · 1998 [cited by applicant]
US 5898548A · Dill et al. · 1999 [cited by examiner]
US 6657823B2 · Kawato · 2003 [cited by applicant]
US 6667861B2 · Gill · 2003 [cited by applicant]
US 6680828B2 · Gill · 2004 [cited by applicant]
US 6906898B2 · Kawato · 2005 [cited by applicant]
US 7016160B2 · Mao et al. · 2006 [cited by applicant]
US 7242556B2 · Gill · 2007 [cited by applicant]
US 7298595B2 · Gill · 2007 [cited by applicant]
US 7436632B2 · Li et al. · 2008 [cited by applicant]
US 7457085B2 · Carey et al. · 2008 [cited by examiner]
US 7643255B2 · Gill · 2010 [cited by applicant]
US 7697242B2 · Gill · 2010 [cited by applicant]
US 7881018B2 · Gill et al. · 2011 [cited by applicant]
US 8125746B2 · Dimitrov et al. · 2012 [cited by applicant]
US 8174799B2 · Hoshiya et al. · 2012 [cited by applicant]
US 8223464B2 · Yasui et al. · 2012 [cited by applicant]
US 8553346B2 · Braganca et al. · 2013 [cited by applicant]
US 8570677B2 · Braganca et al. · 2013 [cited by applicant]
US 8570689B2 · Sato et al. · 2013 [cited by applicant]
US 8654465B2 · Braganca et al. · 2014 [cited by applicant]
US 9190078B2 · Sapozhnikov et al. · 2015 [cited by examiner]
US 9472216B1 · Mauri et al. · 2016 [cited by applicant]
US 9806710B2 · Flatté · 2017 [cited by applicant]
US 9929210B2 · Lai et al. · 2018 [cited by applicant]
US 9947347B1 · Van Der Heijden et al. · 2018 [cited by applicant]
US 10014012B1 · Song et al. · 2018 [cited by applicant]
US 10127933B2 · Batra et al. · 2018 [cited by applicant]
US 10210888B1 · Li et al. · 2019 [cited by applicant]
US 10483457B1 · Lee et al. · 2019 [cited by applicant]
US 10490731B2 · Sasaki et al. · 2019 [cited by applicant]
US 10559318B1 · Chen et al. · 2020 [cited by applicant]
US 10580441B1 · Chen et al. · 2020 [cited by applicant]
US 10679650B2 · Bai et al. · 2020 [cited by applicant]
US 10714136B1 · Chen et al. · 2020 [cited by applicant]
US 10720570B2 · Le et al. · 2020 [cited by applicant]
US 10770104B1 · Chen et al. · 2020 [cited by applicant]
US 10777219B1 · Asif Bashir et al. · 2020 [cited by applicant]
US 10839831B1 · Nguyen et al. · 2020 [cited by applicant]
US 10867626B1 · Li et al. · 2020 [cited by applicant]
US 10891974B1 · Chembrolu et al. · 2021 [cited by applicant]
US 10891975B1 · Bai et al. · 2021 [cited by applicant]
US 10896690B1 · Bai et al. · 2021 [cited by applicant]
US 10991390B2 · Kobayashi · 2021 [cited by applicant]
US 11017801B1 · Chembrolu et al. · 2021 [cited by applicant]
US 11088200B1 · Xiao · 2021 [cited by applicant]
US 11094338B1 · Hwang et al. · 2021 [cited by applicant]
US 11100946B1 · Le et al. · 2021 [cited by applicant]
US 11222656B1 · Le et al. · 2022 [cited by applicant]
US 11227627B1 · Song et al. · 2022 [cited by applicant]
US 11437058B2 · Song et al. · 2022 [cited by applicant]
US 11495741B2 · York et al. · 2022 [cited by applicant]
US 11532323B1 · Le et al. · 2022 [cited by applicant]
US 11763973B2 · Le et al. · 2023 [cited by applicant]
US 11783853B1 · Liu et al. · 2023 [cited by examiner]
US 12125508B2 · Liu et al. · 2024 [cited by examiner]
US 20090161265A1 · Sugano et al. · 2009 [cited by applicant]
US 20110089940A1 · Carey et al. · 2011 [cited by applicant]
US 20140226239A1 · Mihajlovic et al. · 2014 [cited by applicant]
US 20140254252A1 · Guo · 2014 [cited by applicant]
US 20150041934A1 · Khvalkovskiy et al. · 2015 [cited by applicant]
US 20150287426A1 · Mihajlovic et al. · 2015 [cited by applicant]
US 20170077392A1 · Han et al. · 2017 [cited by applicant]
US 20170098545A1 · Woodruff · 2017 [cited by applicant]
US 20170221506A1 · Tan et al. · 2017 [cited by applicant]
US 20170271581A1 · Seong et al. · 2017 [cited by applicant]
US 20170288666A1 · Flatté · 2017 [cited by applicant]
US 20170365777A1 · Mihajlovic et al. · 2017 [cited by applicant]
US 20180166500A1 · Wang et al. · 2018 [cited by applicant]
US 20180358543A1 · Le et al. · 2018 [cited by applicant]
US 20180366172A1 · Wang et al. · 2018 [cited by applicant]
US 20190037703A1 · Wang et al. · 2019 [cited by applicant]
US 20190058113A1 · Ramaswamy et al. · 2019 [cited by applicant]
US 20190326353A1 · O'Brien et al. · 2019 [cited by applicant]
US 20190392881A1 · Rakshit et al. · 2019 [cited by applicant]
US 20200035910A1 · Li et al. · 2020 [cited by applicant]
US 20200098410A1 · Gosavi et al. · 2020 [cited by applicant]
US 20200176511A1 · Park et al. · 2020 [cited by applicant]
US 20200243603A1 · Lee et al. · 2020 [cited by applicant]
US 20200243752A1 · Sasaki · 2020 [cited by applicant]
US 20200279992A1 · Pham et al. · 2020 [cited by applicant]
US 20210056988A1 · Chen et al. · 2021 [cited by applicant]
US 20210249038A1 · Le et al. · 2021 [cited by applicant]
US 20210328134A1 · Guo et al. · 2021 [cited by applicant]
US 20210336127A1 · Le et al. · 2021 [cited by applicant]
US 20210351342A1 · Yui et al. · 2021 [cited by applicant]
US 20210367142A1 · Lee et al. · 2021 [cited by applicant]
US 20210408370A1 · York et al. · 2021 [cited by applicant]
US 20220005498A1 · Le et al. · 2022 [cited by applicant]
US 20220013138A1 · Hwang et al. · 2022 [cited by applicant]
US 20220029090A1 · Cho et al. · 2022 [cited by applicant]
US 20220044103A1 · Nguyen et al. · 2022 [cited by applicant]
US 20220068538A1 · Apalkov et al. · 2022 [cited by applicant]
US 20220069202A1 · Nguyen et al. · 2022 [cited by applicant]
US 20220310901A1 · Oguz et al. · 2022 [cited by applicant]
US 20230027086A1 · Le et al. · 2023 [cited by applicant]
US 20230047223A1 · Le et al. · 2023 [cited by applicant]
US 20230121375A1 · Le et al. · 2023 [cited by applicant]
US 20230197132A1 · Le et al. · 2023 [cited by applicant]
CN 111354392A · 2020 [cited by applicant]
JP 4934582B2 · 2012 [cited by applicant]
JP 2021034480A · 2021 [cited by applicant]
JP 2021057357A · 2021 [cited by applicant]
JP 2021128814A · 2021 [cited by applicant]
WO 2018231292A1 · 2018 [cited by applicant]
WO 2019054484A1 · 2019 [cited by applicant]
WO 2019125388A1 · 2019 [cited by applicant]
WO 2019159885A1 · 2019 [cited by applicant]
WO 2021221726A1 · 2021 [cited by applicant]
WO 2023022764A1 · 2023 [cited by applicant]
“A colossal breakthrough for topological spintronics,” Tokyo Institute of Technology, Jul. 31, 2018, 4 pages, <https://www.titech.ac.jp/english/news/2018/042001.html>. [cited by applicant]
Berry et al. “Melting at dislocations and grain boundaries: A phase field crystal study,” Physical Review, vol. B 77, No. 224114, 2008, p. 224114-1-224114-5, DOI: 10.1103/PhysRevB.77.224114. [cited by applicant]
Buffat et al. “Size effect on the melting temperature of gold particles,” Physical Review A, vol. 13, No. 6, Jun. 1976, pp. 2287-2298. [cited by applicant]
Cantwell et al. “Grain boundary complexions,” ScienceDirect, Acta Materialia, vol. 62, No. 152, 2014, pp. 1-48, http://dx.doi.org/10.1016/j.actamat.2013.07.037. [cited by applicant]
Chi et al. “The Spin Hall Effect of Bi-Sb Alloys Driven by Thermally Excited Dirac-like Electronics,” Oct. 28, 2019, ArXiv: 1910, 40 pages, https://arxiv.org/pdf/1910.12433.pdf. [cited by applicant]
Eustathopoulos “Wetting by Liquid Metals-Application in Materials Processing: The Contribution of the Grenoble Group,” Metals, 2015, vol. 5, No. 1, pp. 350-370, doi:10.3390/met5010350. [cited by applicant]
Fan et al. “Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure,” Nature Materials, vol. 13, Apr. 28, 2014, pp. 1-6, «https://doi.org/10.1038/nmat3973». [cited by applicant]
Frolov et al. “Structural phase transformations in metallic grain boundaries,” Nature Communications, 2013, vol. 4, No. 1899, pp. 1-7, DOI: 10.1038/ncomms2919. [cited by applicant]
Han et al. “Self-Biased Differential Dual Spin Valve Readers for Future Magnetic Recording,” IEEE Transactions on Magnetics, vol. 48, No. 5, May 2012, pp. 1770-1776, 10.1109/TMAG.2011.2169946. [cited by applicant]
International Search Report and the Written Opinion for International Application No. PCT/US2020/065156 mailed Mar. 14, 2021, 13 pages. [cited by applicant]
International Search Report and the Written Opinion for International Application No. PCT/US2020/066902 mailed Apr. 18, 2021, 12 pages. [cited by applicant]
International Search Report and the Written Opinion for International Application No. PCT/US2021/033197 mailed Jul. 12, 2021, 9 pages. [cited by applicant]
International Search Report and the Written Opinion for International Application No. PCT/US2021/033912 mailed Jul. 25, 2021, 9 pages. [cited by applicant]
Khang et al. “A conductive topological insulator with large spin Hall effect for ultralow power spin-orbit torque switching,” Nature Materials, vol. 17, pp. 808-813, Sep. 2018, pp. 808-813, https://doi.org/10.1038/s4156… [cited by applicant]
Kogtenkova et al. “Grain Boundary Complexions and Phase Transformations in Al- and Cu-Based Alloys,” Metals, 2019, vol. 9, No. 1, doi: 10.3390/met9010010, 24 pages. [cited by applicant]
Jabeur et al. “Study of spin transfer torque (STT) and spin orbit torque (SOT) magnetic tunnel junctions (MTJs) at advanced CMOS technology nodes,” Electrical and Electronics Engineering: An International Journal, (ELEL… [cited by applicant]
Lau et al. “Spin-orbit torque switching without an external field using interlayer exchange coupling,” Nature Nanotechnology, vol. 11, Sep. 2016, pp. 758-762, <https://doi.org/10.1038/nnano.2016.84>. [cited by applicant]
Liu “Spin-orbit Torque Driven Magnetization Switching for Non-volatile Memory and Beyond,” Carnegie Mellon University, May 2020, Thesis, 157 pages, <https://doi.org/10.1184/R1/11933571.v1>, <https://kilthub.cmu.edu/arti… [cited by applicant]
Roschewsky et al. “Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures,” Physical Review, vol. B 99, No. 195103, 2019, pp. 195103-1-195103-5, DOI: 10.1103/PhysRevB.99.195103. [cited by applicant]
Roschewsky et al. “Spin-Orbit Torque and Nernst Effect in BiSb/ Co Heterostructures,” Center for Energy Efficient Electronics Science, University of California—Berkeley, 2018, 12 pages, https://e3s-center.berkeley.edu/w… [cited by applicant]
Shao “Spin-Orbit Torques in Topological Insultators,” UCLA Electronic Theses and Dissertations; 2015; 76 pages, https://escholarship.org/content/qt3ds9792s/qt3ds9792s.pdf?t=nys 1b5&nosplash=32ac004cc5750a361e60ece735dd2… [cited by applicant]
Shirokura et al. “Origin of the Giant Spin Hall Effect in BISb Topological Insulator,” ArXiv:1810; 27 pages, https://arxiv.org/ftp/arxiv/papers/1810/1810.10840.pdf. [cited by applicant]
Tanaka et al. “Thermodynamic Evaluation of Nano-Particle Binary Alloy Phase Diagrams,” 2001, Zeitschrift für Metallkunde, vol. 92, No. 11, pp. 1236-1241, http: //hdl.handle.net/11094/26514. [cited by applicant]
Teague “X-ray and Mossbauer spectroscopy studies of the silicon-antimony and bismuth-antimony alloys,” 1971, Scholar's Mine, Doctoral Dissertations, University of Missouri-Rolla, 167 pages. [cited by applicant]
U.S. Appl. No. 17/401,856, filed Aug. 13, 2021. [cited by applicant]
U.S. Appl. No. 17/405,954, filed Aug. 18, 2021. [cited by applicant]
Walker et al. “Composition-dependent structural transition in epitaxial Bi1-xSbx thin films on Si (111),” Physical Review Materials, vol. 3, 064201, Jun. 7, 2019, 8 pages. [cited by applicant]
Yao et al. “Influence of Crystal Orientation and Surface Termination on the Growth of BiSb thin films on GaAs Substrates,” Accepted Manuscript, Journal of Crystal Growth, 2019, 24 pages, doi: https://doi.org/10.1016/j.j… [cited by applicant]
Yuan et al. “Readback Resolution of Differential Dual CPP Spin Valve Reader,” IEEE Transactions on Magnetics, vol. 46, No. 6, Jun. 2010, pp. 1667-1670, 10.1109/TMAG.2010.2045106. [cited by applicant]
Tuo Fan et al. “Ultrahigh Efficient Spin-Orbit Torque Magnetization Switching in All-Sputtered Topological Insulator—Ferromagnet Multilayer”, Jul. 5, 2020, <https://arxiv.org/ftp/arxiv/papers/2007/2007.02264.pdf. [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2022/027960 dated Sep. 5, 2022. [cited by applicant]
Zhang et al., “Different types of spin currents in the comprehensive materials database of nonmagnetic spin Hall effect”, NPJ Computational Materials, 2021, 167, pp. 1-7, (Year: 2021). [cited by applicant]
Shirokura et al. “Origin of the Giant Spin Hall Effect in BISb Topological Insulator,” ArXiv:1810; 27 pages, https://arxiv.org/ftp/arxiv/papers/1810/1810.10840.pdf, Published Oct. 25, 2018. [cited by applicant]
Demasius, Kai-Uwe, et al. “Enhanced spin-orbit torques by oxygen incorporation in tungsten films.” Nature communications 7.1 (2016): 1-7. [cited by applicant]
International Search Report and Written Opinion dated Nov. 16, 2022 for Application No. PCT/US2022/035654. [cited by applicant]
Manchon, A. et al. “Theory of nonequilibrium intrinsic spin torque in a single nanomagnet”, Phys. Rev. B, vol. 78, 212405, Dec. 2008. [cited by applicant]