Patent Assignment
Reel/Frame 007374/0032
Security Interest
Recorded: 1995-03-03
Pages: 20
Assignor
RAMTRON INTERNATIONAL CORPORATION
Executed: 1995-03-02
Assignee
NATIONAL ELECTRICAL BENEFIT FUND
1125 FIFTEENTH STREET, N.W., WASHINGTON, DISTRICT OF COLUMBIA, 20005
Covered Properties
(52)
Process for Manufacturing a Ferroelectric Device and Devices Manufactured Thereby
Patent:
4,195,355 →
Application:
05/658,199 →
Monolithic Semiconductor Integrated Circuit Ferroelectric Memory Device, and Methods of Fabricating and Utilizing Same
Patent:
4,707,897 →
Application:
06/133,338 →
Combined Integrated Circuit/Ferroelectric Memory Device, and Ion Beam Methods of Constructing Same
Patent:
4,713,157 →
Application:
06/733,939 →
Method of Making Ferroelectric Memory Devices
Patent:
5,024,964 →
Application:
06/793,186 →
Self Restoring Ferroelectric Memory
Patent:
4,873,664 →
Application:
07/013,746 →
Data Storage Device and Method of Using a Ferroeloctric Capacitance Divider
Patent:
4,853,893 →
Application:
07/069,389 →
Method of Operating a Memory Cell with Volatile and Non-Volatile Portions Having Ferroelectric Capacitors
Patent:
4,809,225 →
Application:
07/069,390 →
Timepiece Communication System
Patent:
4,800,543 →
Application:
07/128,550 →
Ferroelectric Retention Method
Patent:
4,893,272 →
Application:
07/184,996 →
Non-Volatile Memory Cell and Sensing Method
Patent:
4,888,733 →
Application:
07/243,414 →
One Transistor Memory Cell with Programmable Capacitance Divider
Patent:
4,914,627 →
Application:
07/292,776 →
Sram with Programmable Capacitance Divider
Patent:
4,918,654 →
Application:
07/292,818 →
Dram with Programmable Capacitance Divider
Patent:
4,910,708 →
Application:
07/292,891 →
Multilayer Electrodes for Integrated Circuit Capacitors
Patent:
5,005,102 →
Application:
07/368,668 →
Dram Memory Cell and Method of Operation Thereof for Transferring Increased Amount of Charge to a Bit Line
Patent:
5,109,357 →
Application:
07/491,180 →
Sealed Self Aligned Contacts Using Two Nitrides Process
Patent:
5,043,790 →
Application:
07/505,242 →
Trench Capacitor for Large Scale Integrated Memory
Patent:
5,075,817 →
Application:
07/542,573 →
Method for Creating Self-Aligned, Non-Patterned Contact Areas & Stacked Capacitors Using the Method
Patent:
5,104,822 →
Application:
07/559,466 →
Output Control Circuit Having Continuously Variable Drive Current
Patent:
5,255,222 →
Application:
07/644,902 →
Current Supply Circuit for Driving High Capacitance Load in an Integrated Circuit
Patent:
5,134,310 →
Application:
07/644,903 →
Reference Generator for an Integrated Circuit
Patent:
5,117,177 →
Application:
07/644,904 →
Stacked Capacitor with Sidewall Insulation
Patent:
5,162,890 →
Application:
07/681,159 →
Reaction Barrier for a Multilayer Structure in an Integrated Circuit
Patent:
5,170,242 →
Application:
07/698,841 →
Conducting Electrode Layers for Ferroelectric Capacitors in Integrated Circuits and Method
Patent:
5,142,437 →
Application:
07/714,682 →
Self Sealed Aligned Contact Incorporating a Dopant Source
Patent:
5,216,281 →
Application:
07/750,098 →
Monolithic Semiconductor Integrated Circuit Ferroelectric Memory Device
Patent:
5,214,300 →
Application:
07/763,371 →
Semiconductor Device with Ferroelectric and Method of Manufacturing the Same
Patent:
5,293,510 →
Application:
07/778,895 →
Structure of High Dielectric Constant Metal/ Dielectric/Semiconductor Capacitor for Use as the Storage Capacitor in Memory Devices
Patent:
5,338,951 →
Application:
07/788,547 →
Series Ferroelectric Capacitor Structure for Monolithic Integrated Circuits and Method
Patent:
5,206,788 →
Application:
07/806,726 →
Method of Manufacturing Semiconductor Device Using a Ferroelectric Film Over a Source Region
Patent:
5,229,309 →
Application:
07/828,886 →
Structure and Method for Increasing the Dielectric Constant of Integrated Ferroelectric Capacitors
Patent:
5,216,572 →
Application:
07/853,901 →
Use of Palladium as an Adhesion Layer and as an Electrode in Ferroelectric Memory Devices
Patent:
5,191,510 →
Application:
07/875,749 →
Non-Volatile Ferroelectric Memory with Folded Bit Lines and Method of Making the Same
Patent:
5,371,699 →
Application:
07/977,825 →
Sealed Self Aligned Contact Process
Patent:
5,385,634 →
Application:
08/043,569 →
Ozone Gas Processing for Ferroelectric Memory Circuits
Patent:
5,374,578 →
Application:
08/064,746 →
Ferroelectric-Based Ram Sensing Scheme Including Bit-Line Capacitance Isolation
Patent:
5,381,364 →
Application:
08/083,883 →
Ferroelectrid Memory Device with Capacitor Electrode in Direct Contact with Source Region
Patent:
5,866,926 →
Application:
08/093,790 →
Semiconductor Device Having a Ferroelectric Film in a Through-Hole
Patent:
5,369,296 →
Application:
08/139,340 →
Integration of High Value Capacitor with Ferroelectric Memory
Application:
08/194,706 →
Ferroelectric Capacitor Renewal Method
Patent:
5,525,528 →
Application:
08/200,216 →
System and Method for Write-Protecting Predetermined Portions of a Memory Array
Patent:
5,394,367 →
Application:
08/210,699 →
Passivation Method and Structure for a Ferroelectric Integrated Circuit Using Hard Ceramic Materials or the Like
Patent:
5,438,023 →
Application:
08/212,495 →
Semiconductor Device Having a Transistor, a Ferroelectric Capacitor and a Hydrogen Barrier Film
Patent:
5,523,595 →
Application:
08/238,802 →
Noise and Glitch Suppressing Filter with Feedback
Patent:
5,479,132 →
Application:
08/254,281 →
System and Method for Initiating Communications Between a Controller and a Selected Subset of Multiple Transponders in a Common Rf Field
Patent:
5,434,572 →
Application:
08/255,088 →
Stacked Ferroelectric Memory Cell and Method
Patent:
5,495,117 →
Application:
08/257,954 →
Method of Manufacturing Ferroelectric Bismuth Layered Oxides
Patent:
5,426,075 →
Application:
08/259,870 →
Process for Fabricating Transistors Using Composite Nitride Structure
Patent:
5,610,099 →
Application:
08/267,278 →
Circuit with a Single Address Register That Augments a Memory Controller by Enabling Cache Reads and Page-Mode Writes
Patent:
5,566,318 →
Application:
08/284,384 →
Layered Local Interconnect Compatible with Integrated Circuit Ferroelectric Capacitors
Patent:
5,498,569 →
Application:
08/294,077 →
Semiconductor Device with a Conductive Reaction-Preventing Film
Patent:
5,475,248 →
Application:
08/303,134 →
Voltage Reference for a Ferroelectric 1T/1C Based Memory
Patent:
5,572,459 →
Application:
08/306,686 →
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest.
May 14, 1985
From: MC MILLAN, LARRY; PAZ DE ARAUJO, CARLOS
To: RAMTRON CORPORATION A CORP OF DE
Reel/Frame 004421/0626 →
Assignment of Assignors Interest.
Oct 31, 1985
From: ROHRER, GEORGE A.; MC MILLAN, LARRY D.
To: RAMTRON CORPORATION, A CORP OF DE
Reel/Frame 004481/0611 →
Assignment of Assignors Interest.
Aug 22, 1988
From: EATON, S. SHEFFIELD JR.; BUTLER, DOUGLAS; PARRIS, MICHAEL C.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004931/0860 →
Assignment of Assignors Interest.
Sep 12, 1988
From: MOBLEY, KENNETH J.
To: RAMTRON CORPORATION, A CORP. OF DE.
Reel/Frame 004935/0075 →
Assignment of Assignors Interest.
Sep 19, 1988
From: PAZ DE ARAUJO, CARLOS
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0760 →
Assignment of Assignors Interest.
Sep 19, 1988
From: GNADINGER, ALFRED P.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0766 →
Assignment of Assignors Interest.
Sep 19, 1988
From: BLACK, DONALD L.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0764 →
Assignment of Assignors Interest.
Sep 19, 1988
From: LYNDON-JAMES, ROSS
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0762 →
Assignment of Assignors Interest.
Jun 20, 1989
From: LARSON, WILLIAM L.
To: RAMTRON CORPORATION
Reel/Frame 005095/0171 →
Assignment of Assignors Interest.
Apr 5, 1990
From: BUTLER, DOUGLAS
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR COMPANY, LTD., A CORP. OF JAPAN
Reel/Frame 005282/0415 →
Assignment of 1/2 of Assignors Interest
Jun 22, 1990
From: BUTLER, DOUGLAS B.
To: RAMTRO CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR COMPANY, LTD., A CORP. OF JAPAN
Reel/Frame 005345/0818 →
Assignment of Assignors Interest. Each Assignee to Own an Undivided One-Half Interest
Jul 30, 1990
From: BUTLER, DOUGLAS B.
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR COMPANY, LTD., A CORP. OF JAPAN
Reel/Frame 005398/0413 →
Assignment of Assignors Interest.
Jan 23, 1991
From: EATON, S. S. JR.
To: RAMTRON CORPORATION, A CORP. OF DELAWARE; NMB SEMICONDUCTOR CO., LTD.
Reel/Frame 005588/0771 →
Assignment of Assignors Interest.
Jan 23, 1991
From: MOBLEY, KENNETH J.
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR CO., LTD.
Reel/Frame 005599/0578 →
Assignment of Assignors Interest.
Jan 23, 1991
From: EATON, S. S. JR.
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR CO., LTD., JAPAN
Reel/Frame 005590/0958 →
Assignment of Assignors Interest.
Jun 13, 1991
From: KAMMERDINER, LEE; HUFFMAN, MARIA; GOLABI-KHOOZANI, MANOOCHEHR
To: RAMTRON CORPORATION, A DE CORPORATION
Reel/Frame 005738/0501 →
Assignment of Assignors Interest.
Oct 28, 1991
From: BUTLER, DOUGLAS
To: RAMTRON CORPORATION A CORP. OF DELAWARE; NMB SEMICONDUCTOR COMPANY, LTD. A CORP. OF JAPAN
Reel/Frame 005898/0548 →
Merger
May 10, 1993
From: RAMTRON CORPORATION
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 006581/0001 →
Change of Name
May 28, 1993
From: NMB SEMICONDUCTOR COMPANY, LTD.
To: NIPPON STEEL SEMICONDUCTOR CORPORATION
Reel/Frame 006554/0575 →
Security Interest
Oct 12, 1993
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND; BENTON, OREN L.
Reel/Frame 006721/0286 →
Security Agreement
Sep 29, 1995
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND
Reel/Frame 007662/0353 →
Release/Termination of Security Interest
Sep 29, 1995
From: NATIONAL ELECTRICAL BENEFIT FUND; BENTON, OREN L.
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 007648/0966 →
Security Interest
Apr 12, 2002
From: RAMTRON INTERNATIONAL CORPORATION
To: INFINEON TECHNOLOGIES AG
Reel/Frame 012653/0747 →
Release of Security Interest
Mar 29, 2004
From: NATIONAL ELECTRICAL BENEFIT FUND
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 014468/0248 →
Amendment to Security Agreement and Amendment to Certain Ip
Apr 5, 2004
From: INFINEON TECHNOLOGIES AG
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 014491/0364 →