IP Library Assignment 007648/0966
Patent Assignment
Reel/Frame 007648/0966

Release/Termination of Security Interest

Recorded: 1995-09-29 Pages: 6
Assignors
NATIONAL ELECTRICAL BENEFIT FUND
Executed: 1993-07-02
BENTON, OREN L.
Executed: 1995-09-01
Assignee
RAMTRON INTERNATIONAL CORPORATION
1850 RAMTRON DRIVE, COLORADO SPRINGS, COLORADO, 80921
Covered Properties (29)
Process for Manufacturing a Ferroelectric Device and Devices Manufactured Thereby
Patent: 4,195,355 →
Application: 05/658,199 →
Monolithic Semiconductor Integrated Circuit Ferroelectric Memory Device, and Methods of Fabricating and Utilizing Same
Patent: 4,707,897 →
Application: 06/133,338 →
Combined Integrated Circuit/Ferroelectric Memory Device, and Ion Beam Methods of Constructing Same
Patent: 4,713,157 →
Application: 06/733,939 →
Method of Making Ferroelectric Memory Devices
Patent: 5,024,964 →
Application: 06/793,186 →
Self Restoring Ferroelectric Memory
Patent: 4,873,664 →
Application: 07/013,746 →
Data Storage Device and Method of Using a Ferroeloctric Capacitance Divider
Patent: 4,853,893 →
Application: 07/069,389 →
Method of Operating a Memory Cell with Volatile and Non-Volatile Portions Having Ferroelectric Capacitors
Patent: 4,809,225 →
Application: 07/069,390 →
Timepiece Communication System
Patent: 4,800,543 →
Application: 07/128,550 →
Ferroelectric Retention Method
Patent: 4,893,272 →
Application: 07/184,996 →
Non-Volatile Memory Cell and Sensing Method
Patent: 4,888,733 →
Application: 07/243,414 →
One Transistor Memory Cell with Programmable Capacitance Divider
Patent: 4,914,627 →
Application: 07/292,776 →
Sram with Programmable Capacitance Divider
Patent: 4,918,654 →
Application: 07/292,818 →
Dram with Programmable Capacitance Divider
Patent: 4,910,708 →
Application: 07/292,891 →
Multilayer Electrodes for Integrated Circuit Capacitors
Patent: 5,005,102 →
Application: 07/368,668 →
Dram Memory Cell and Method of Operation Thereof for Transferring Increased Amount of Charge to a Bit Line
Patent: 5,109,357 →
Application: 07/491,180 →
Sealed Self Aligned Contacts Using Two Nitrides Process
Patent: 5,043,790 →
Application: 07/505,242 →
Trench Capacitor for Large Scale Integrated Memory
Patent: 5,075,817 →
Application: 07/542,573 →
Method for Creating Self-Aligned, Non-Patterned Contact Areas & Stacked Capacitors Using the Method
Patent: 5,104,822 →
Application: 07/559,466 →
Current Supply Circuit for Driving High Capacitance Load in an Integrated Circuit
Patent: 5,134,310 →
Application: 07/644,903 →
Reference Generator for an Integrated Circuit
Patent: 5,117,177 →
Application: 07/644,904 →
Stacked Capacitor with Sidewall Insulation
Patent: 5,162,890 →
Application: 07/681,159 →
Reaction Barrier for a Multilayer Structure in an Integrated Circuit
Patent: 5,170,242 →
Application: 07/698,841 →
Conducting Electrode Layers for Ferroelectric Capacitors in Integrated Circuits and Method
Patent: 5,142,437 →
Application: 07/714,682 →
Self Sealed Aligned Contact Incorporating a Dopant Source
Patent: 5,216,281 →
Application: 07/750,098 →
Monolithic Semiconductor Integrated Circuit Ferroelectric Memory Device
Patent: 5,214,300 →
Application: 07/763,371 →
Series Ferroelectric Capacitor Structure for Monolithic Integrated Circuits and Method
Patent: 5,206,788 →
Application: 07/806,726 →
Method of Manufacturing Semiconductor Device Using a Ferroelectric Film Over a Source Region
Patent: 5,229,309 →
Application: 07/828,886 →
Structure and Method for Increasing the Dielectric Constant of Integrated Ferroelectric Capacitors
Patent: 5,216,572 →
Application: 07/853,901 →
Use of Palladium as an Adhesion Layer and as an Electrode in Ferroelectric Memory Devices
Patent: 5,191,510 →
Application: 07/875,749 →
Related Assignments (25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest. May 14, 1985
From: MC MILLAN, LARRY; PAZ DE ARAUJO, CARLOS
To: RAMTRON CORPORATION A CORP OF DE
Reel/Frame 004421/0626 →
Assignment of Assignors Interest. Oct 31, 1985
From: ROHRER, GEORGE A.; MC MILLAN, LARRY D.
To: RAMTRON CORPORATION, A CORP OF DE
Reel/Frame 004481/0611 →
Assignment of Assignors Interest. Aug 22, 1988
From: EATON, S. SHEFFIELD JR.; BUTLER, DOUGLAS; PARRIS, MICHAEL C.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004931/0860 →
Assignment of Assignors Interest. Sep 12, 1988
From: MOBLEY, KENNETH J.
To: RAMTRON CORPORATION, A CORP. OF DE.
Reel/Frame 004935/0075 →
Assignment of Assignors Interest. Sep 19, 1988
From: PAZ DE ARAUJO, CARLOS
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0760 →
Assignment of Assignors Interest. Sep 19, 1988
From: GNADINGER, ALFRED P.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0766 →
Assignment of Assignors Interest. Sep 19, 1988
From: BLACK, DONALD L.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0764 →
Assignment of Assignors Interest. Sep 19, 1988
From: LYNDON-JAMES, ROSS
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0762 →
Assignment of Assignors Interest. Jun 20, 1989
From: LARSON, WILLIAM L.
To: RAMTRON CORPORATION
Reel/Frame 005095/0171 →
Assignment of Assignors Interest. Apr 5, 1990
From: BUTLER, DOUGLAS
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR COMPANY, LTD., A CORP. OF JAPAN
Reel/Frame 005282/0415 →
Assignment of 1/2 of Assignors Interest Jun 22, 1990
From: BUTLER, DOUGLAS B.
To: RAMTRO CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR COMPANY, LTD., A CORP. OF JAPAN
Reel/Frame 005345/0818 →
Assignment of Assignors Interest. Each Assignee to Own an Undivided One-Half Interest Jul 30, 1990
From: BUTLER, DOUGLAS B.
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR COMPANY, LTD., A CORP. OF JAPAN
Reel/Frame 005398/0413 →
Assignment of Assignors Interest. Jan 23, 1991
From: MOBLEY, KENNETH J.
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR CO., LTD.
Reel/Frame 005599/0578 →
Assignment of Assignors Interest. Jan 23, 1991
From: EATON, S. S. JR.
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR CO., LTD., JAPAN
Reel/Frame 005590/0958 →
Assignment of Assignors Interest. Jun 13, 1991
From: KAMMERDINER, LEE; HUFFMAN, MARIA; GOLABI-KHOOZANI, MANOOCHEHR
To: RAMTRON CORPORATION, A DE CORPORATION
Reel/Frame 005738/0501 →
Assignment of Assignors Interest. Oct 28, 1991
From: BUTLER, DOUGLAS
To: RAMTRON CORPORATION A CORP. OF DELAWARE; NMB SEMICONDUCTOR COMPANY, LTD. A CORP. OF JAPAN
Reel/Frame 005898/0548 →
Merger May 10, 1993
From: RAMTRON CORPORATION
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 006581/0001 →
Change of Name May 28, 1993
From: NMB SEMICONDUCTOR COMPANY, LTD.
To: NIPPON STEEL SEMICONDUCTOR CORPORATION
Reel/Frame 006554/0575 →
Security Interest Oct 12, 1993
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND; BENTON, OREN L.
Reel/Frame 006721/0286 →
Security Interest Mar 3, 1995
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND
Reel/Frame 007374/0032 →
Security Agreement Sep 29, 1995
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND
Reel/Frame 007662/0353 →
Security Interest Apr 12, 2002
From: RAMTRON INTERNATIONAL CORPORATION
To: INFINEON TECHNOLOGIES AG
Reel/Frame 012653/0747 →
Release of Security Interest Mar 29, 2004
From: NATIONAL ELECTRICAL BENEFIT FUND
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 014468/0248 →
Amendment to Security Agreement and Amendment to Certain Ip Apr 5, 2004
From: INFINEON TECHNOLOGIES AG
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 014491/0364 →
Release of Security Agreement May 12, 2004
From: NATIONAL ELECTRICAL BENEFIT FUND
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 014624/0077 →