IP Library › Assignment 007662/0353
Patent Assignment
Reel/Frame 007662/0353

Security Agreement

Recorded: 1995-09-29 Pages: 15
Assignor
RAMTRON INTERNATIONAL CORPORATION
Executed: 1995-08-31
Assignee
NATIONAL ELECTRICAL BENEFIT FUND
1125 FIFTEENTH STREET, N.W., WASHINGTON, DISTRICT OF COLUMBIA, 20005
Covered Properties (58)
Monolithic Semiconductor Integrated Circuit Ferroelectric Memory Device, and Methods of Fabricating and Utilizing Same
Patent: 4,707,897 →
Application: 06/133,338 →
Combined Integrated Circuit/Ferroelectric Memory Device, and Ion Beam Methods of Constructing Same
Patent: 4,713,157 →
Application: 06/733,939 →
Method of Making Ferroelectric Memory Devices
Patent: 5,024,964 →
Application: 06/793,186 →
Self Restoring Ferroelectric Memory
Patent: 4,873,664 →
Application: 07/013,746 →
Data Storage Device and Method of Using a Ferroeloctric Capacitance Divider
Patent: 4,853,893 →
Application: 07/069,389 →
Method of Operating a Memory Cell with Volatile and Non-Volatile Portions Having Ferroelectric Capacitors
Patent: 4,809,225 →
Application: 07/069,390 →
Timepiece Communication System
Patent: 4,800,543 →
Application: 07/128,550 →
Ferroelectric Retention Method
Patent: 4,893,272 →
Application: 07/184,996 →
Non-Volatile Memory Cell and Sensing Method
Patent: 4,888,733 →
Application: 07/243,414 →
One Transistor Memory Cell with Programmable Capacitance Divider
Patent: 4,914,627 →
Application: 07/292,776 →
Sram with Programmable Capacitance Divider
Patent: 4,918,654 →
Application: 07/292,818 →
Dram with Programmable Capacitance Divider
Patent: 4,910,708 →
Application: 07/292,891 →
Multilayer Electrodes for Integrated Circuit Capacitors
Patent: 5,005,102 →
Application: 07/368,668 →
Dram Memory Cell and Method of Operation Thereof for Transferring Increased Amount of Charge to a Bit Line
Patent: 5,109,357 →
Application: 07/491,180 →
Sealed Self Aligned Contacts Using Two Nitrides Process
Patent: 5,043,790 →
Application: 07/505,242 →
Trench Capacitor for Large Scale Integrated Memory
Patent: 5,075,817 →
Application: 07/542,573 →
Method for Creating Self-Aligned, Non-Patterned Contact Areas & Stacked Capacitors Using the Method
Patent: 5,104,822 →
Application: 07/559,466 →
Output Control Circuit Having Continuously Variable Drive Current
Patent: 5,255,222 →
Application: 07/644,902 →
Current Supply Circuit for Driving High Capacitance Load in an Integrated Circuit
Patent: 5,134,310 →
Application: 07/644,903 →
Reference Generator for an Integrated Circuit
Patent: 5,117,177 →
Application: 07/644,904 →
Stacked Capacitor with Sidewall Insulation
Patent: 5,162,890 →
Application: 07/681,159 →
Reaction Barrier for a Multilayer Structure in an Integrated Circuit
Patent: 5,170,242 →
Application: 07/698,841 →
Conducting Electrode Layers for Ferroelectric Capacitors in Integrated Circuits and Method
Patent: 5,142,437 →
Application: 07/714,682 →
Self Sealed Aligned Contact Incorporating a Dopant Source
Patent: 5,216,281 →
Application: 07/750,098 →
Monolithic Semiconductor Integrated Circuit Ferroelectric Memory Device
Patent: 5,214,300 →
Application: 07/763,371 →
Semiconductor Device with Ferroelectric and Method of Manufacturing the Same
Patent: 5,293,510 →
Application: 07/778,895 →
Structure of High Dielectric Constant Metal/ Dielectric/Semiconductor Capacitor for Use as the Storage Capacitor in Memory Devices
Patent: 5,338,951 →
Application: 07/788,547 →
Series Ferroelectric Capacitor Structure for Monolithic Integrated Circuits and Method
Patent: 5,206,788 →
Application: 07/806,726 →
Method of Manufacturing Semiconductor Device Using a Ferroelectric Film Over a Source Region
Patent: 5,229,309 →
Application: 07/828,886 →
Structure and Method for Increasing the Dielectric Constant of Integrated Ferroelectric Capacitors
Patent: 5,216,572 →
Application: 07/853,901 →
Use of Palladium as an Adhesion Layer and as an Electrode in Ferroelectric Memory Devices
Patent: 5,191,510 →
Application: 07/875,749 →
Non-Volatile Ferroelectric Memory with Folded Bit Lines and Method of Making the Same
Patent: 5,371,699 →
Application: 07/977,825 →
Sealed Self Aligned Contact Process
Patent: 5,385,634 →
Application: 08/043,569 →
Ozone Gas Processing for Ferroelectric Memory Circuits
Patent: 5,374,578 →
Application: 08/064,746 →
Ferroelectric-Based Ram Sensing Scheme Including Bit-Line Capacitance Isolation
Patent: 5,381,364 →
Application: 08/083,883 →
Ferroelectrid Memory Device with Capacitor Electrode in Direct Contact with Source Region
Patent: 5,866,926 →
Application: 08/093,790 →
Semiconductor Device Having a Ferroelectric Film in a Through-Hole
Patent: 5,369,296 →
Application: 08/139,340 →
Integration of High Value Capacitor with Ferroelectric Memory
Application: 08/194,706 →
Ferroelectric Capacitor Renewal Method
Patent: 5,525,528 →
Application: 08/200,216 →
System and Method for Write-Protecting Predetermined Portions of a Memory Array
Patent: 5,394,367 →
Application: 08/210,699 →
Passivation Method and Structure for a Ferroelectric Integrated Circuit Using Hard Ceramic Materials or the Like
Patent: 5,438,023 →
Application: 08/212,495 →
Semiconductor Device Having a Transistor, a Ferroelectric Capacitor and a Hydrogen Barrier Film
Patent: 5,523,595 →
Application: 08/238,802 →
Noise and Glitch Suppressing Filter with Feedback
Patent: 5,479,132 →
Application: 08/254,281 →
System and Method for Initiating Communications Between a Controller and a Selected Subset of Multiple Transponders in a Common Rf Field
Patent: 5,434,572 →
Application: 08/255,088 →
Stacked Ferroelectric Memory Cell and Method
Patent: 5,495,117 →
Application: 08/257,954 →
Method of Manufacturing Ferroelectric Bismuth Layered Oxides
Patent: 5,426,075 →
Application: 08/259,870 →
Process for Fabricating Transistors Using Composite Nitride Structure
Patent: 5,610,099 →
Application: 08/267,278 →
Circuit with a Single Address Register That Augments a Memory Controller by Enabling Cache Reads and Page-Mode Writes
Patent: 5,566,318 →
Application: 08/284,384 →
Layered Local Interconnect Compatible with Integrated Circuit Ferroelectric Capacitors
Patent: 5,498,569 →
Application: 08/294,077 →
Semiconductor Device with a Conductive Reaction-Preventing Film
Patent: 5,475,248 →
Application: 08/303,134 →
Voltage Reference for a Ferroelectric 1T/1C Based Memory
Patent: 5,572,459 →
Application: 08/306,686 →
Enhanced Dram with All Reads from on-Chip Cache and All Writers to Memory Array
Patent: 5,699,317 →
Application: 08/319,289 →
Passivation Method and Structure Using Hard Ceramic Materials or the Like
Patent: 5,578,867 →
Application: 08/394,467 →
Film Having Ferroelectric Bismuth Layered Oxides
Patent: 5,519,566 →
Application: 08/403,489 →
Ferroelectric Memory Sensing Method Using Distinct Read and Write Voltages
Patent: 5,532,953 →
Application: 08/413,083 →
Circuit and Method for Reducing a Compensation of a Ferroelectric Capacitor by Multiple Pulsing of the Plate Line Following a Write Operation
Patent: 5,592,410 →
Application: 08/420,293 →
Fabrication of Metal-Ferroelectric-Metal Capacitors with a Two Step Patterning Sequence
Patent: 5,789,323 →
Application: 08/428,544 →
Low Loss, Regulated Charge Pump with Integrated Ferroelectric Capacitors
Patent: 5,889,428 →
Application: 08/468,861 →
Related Assignments (25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest. May 14, 1985
From: MC MILLAN, LARRY; PAZ DE ARAUJO, CARLOS
To: RAMTRON CORPORATION A CORP OF DE
Reel/Frame 004421/0626 →
Assignment of Assignors Interest. Oct 31, 1985
From: ROHRER, GEORGE A.; MC MILLAN, LARRY D.
To: RAMTRON CORPORATION, A CORP OF DE
Reel/Frame 004481/0611 →
Assignment of Assignors Interest. Aug 22, 1988
From: EATON, S. SHEFFIELD JR.; BUTLER, DOUGLAS; PARRIS, MICHAEL C.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004931/0860 →
Assignment of Assignors Interest. Sep 12, 1988
From: MOBLEY, KENNETH J.
To: RAMTRON CORPORATION, A CORP. OF DE.
Reel/Frame 004935/0075 →
Assignment of Assignors Interest. Sep 19, 1988
From: PAZ DE ARAUJO, CARLOS
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0760 →
Assignment of Assignors Interest. Sep 19, 1988
From: GNADINGER, ALFRED P.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0766 →
Assignment of Assignors Interest. Sep 19, 1988
From: BLACK, DONALD L.
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0764 →
Assignment of Assignors Interest. Sep 19, 1988
From: LYNDON-JAMES, ROSS
To: RAMTRON CORPORATION, A CORP. OF DE
Reel/Frame 004993/0762 →
Assignment of Assignors Interest. Jun 20, 1989
From: LARSON, WILLIAM L.
To: RAMTRON CORPORATION
Reel/Frame 005095/0171 →
Assignment of Assignors Interest. Apr 5, 1990
From: BUTLER, DOUGLAS
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR COMPANY, LTD., A CORP. OF JAPAN
Reel/Frame 005282/0415 →
Assignment of 1/2 of Assignors Interest Jun 22, 1990
From: BUTLER, DOUGLAS B.
To: RAMTRO CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR COMPANY, LTD., A CORP. OF JAPAN
Reel/Frame 005345/0818 →
Assignment of Assignors Interest. Each Assignee to Own an Undivided One-Half Interest Jul 30, 1990
From: BUTLER, DOUGLAS B.
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR COMPANY, LTD., A CORP. OF JAPAN
Reel/Frame 005398/0413 →
Assignment of Assignors Interest. Jan 23, 1991
From: EATON, S. S. JR.
To: RAMTRON CORPORATION, A CORP. OF DELAWARE; NMB SEMICONDUCTOR CO., LTD.
Reel/Frame 005588/0771 →
Assignment of Assignors Interest. Jan 23, 1991
From: MOBLEY, KENNETH J.
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR CO., LTD.
Reel/Frame 005599/0578 →
Assignment of Assignors Interest. Jan 23, 1991
From: EATON, S. S. JR.
To: RAMTRON CORPORATION, A CORP. OF DE; NMB SEMICONDUCTOR CO., LTD., JAPAN
Reel/Frame 005590/0958 →
Assignment of Assignors Interest. Jun 13, 1991
From: KAMMERDINER, LEE; HUFFMAN, MARIA; GOLABI-KHOOZANI, MANOOCHEHR
To: RAMTRON CORPORATION, A DE CORPORATION
Reel/Frame 005738/0501 →
Assignment of Assignors Interest. Oct 28, 1991
From: BUTLER, DOUGLAS
To: RAMTRON CORPORATION A CORP. OF DELAWARE; NMB SEMICONDUCTOR COMPANY, LTD. A CORP. OF JAPAN
Reel/Frame 005898/0548 →
Merger May 10, 1993
From: RAMTRON CORPORATION
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 006581/0001 →
Change of Name May 28, 1993
From: NMB SEMICONDUCTOR COMPANY, LTD.
To: NIPPON STEEL SEMICONDUCTOR CORPORATION
Reel/Frame 006554/0575 →
Security Interest Oct 12, 1993
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND; BENTON, OREN L.
Reel/Frame 006721/0286 →
Security Interest Mar 3, 1995
From: RAMTRON INTERNATIONAL CORPORATION
To: NATIONAL ELECTRICAL BENEFIT FUND
Reel/Frame 007374/0032 →
Release/Termination of Security Interest Sep 29, 1995
From: NATIONAL ELECTRICAL BENEFIT FUND; BENTON, OREN L.
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 007648/0966 →
Security Interest Apr 12, 2002
From: RAMTRON INTERNATIONAL CORPORATION
To: INFINEON TECHNOLOGIES AG
Reel/Frame 012653/0747 →
Release of Security Interest Mar 29, 2004
From: NATIONAL ELECTRICAL BENEFIT FUND
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 014468/0248 →
Amendment to Security Agreement and Amendment to Certain Ip Apr 5, 2004
From: INFINEON TECHNOLOGIES AG
To: RAMTRON INTERNATIONAL CORPORATION
Reel/Frame 014491/0364 →