Assignment of Assignor's Interest

Recorded: 1996-03-04 Pages: 2

Assignor

KATO, HIROSI

Executed: 1995-11-07

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN

Covered Property (1)

Method for Fabricating a Bipolar Transistor with a Base Layer Having an Extremely Low Resistance

Patent: 5,648,280 →

Application: 08/533,850 →

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.