Patent Assignment
Reel/Frame 008526/0292
Assignment of Assignor's Interest
Recorded: 1997-02-26
Pages: 2
Assignor
ASAI, SHUJI
Executed: 1997-02-17
Assignee
NEC CORPORATION
MINATO-KU, 7-1, SHIBA 5-CHOME, TOKYO, JAPAN
Covered Property
(1)
Compound Semiconductor Device Having an Ion Implanted Defect-Rich Layer for Improved Backgate Effect Suppression
Patent:
6,420,775 →
Application:
08/806,985 →
Related Assignments
(4)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 31, 2003
From: NEC CORPORATION
To: NEC COMPOUND SEMICONDUCTOR DEVICES
Reel/Frame 013905/0105 →
Document Re-Recorded to Correct an Error Contained in Property Number 09/806,985 in the Document Previously Recorded on Reel 013905, Frame 0105. Assignor Hereby Confirms the Assignment of the Entire Interest.
Nov 17, 2003
From: NEC CORPORATION
To: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
Reel/Frame 014133/0945 →
Assignment of Assignor's Interest
Apr 4, 2006
From: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
To: NEC ELECTRONICS CORPORATION
Reel/Frame 017422/0528 →
Change of Name
Oct 21, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025173/0161 →