Patent Assignment
Reel/Frame 011515/0286
Assignment of Assignor's Interest
Recorded: 2001-02-05
Pages: 2
Assignor
OGATA, TAMOTSU
Executed: 2001-01-08
Assignee
MITSUBISHI DENKI KABUSHIKI KAISHA
2-3, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO 100-8310, JAPAN
Covered Property
(1)
Method of Manufacturing Semiconductor Device Including a Step of Forming a Silicide Layer, and Semiconductor Device Manufactured Thereby
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.