IP Library Assignment 013329/0222
Patent Assignment
Reel/Frame 013329/0222

Assignment of Assignor's Interest

Recorded: 2002-09-23 Pages: 6
Assignors
SHIBATA, MASATOMO
Executed: 2002-05-22
KURODA, NAOTAKA
Executed: 2002-05-22
Assignees
HITACHI CABLE, LTD
6-1, OTEMACHI 1-CHOME, CHIYODA-KU, TOKYO, JAPAN
NEC CORPORATION
7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property (1)
Process for Producing Gallium Nitride Crystal Substrate, and Gallium Nitride Crystal Substrate
Patent: 6,824,610 →
Application: 10/106,693 →
Publication: US 2002/0175340
Related Assignments (5)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jun 11, 2002
From: SHIBATA, MASATOMO; KURODA, NAOTAKA
To: HITACHI CABLE, LTD.; NEC CORPORATION
Reel/Frame 013002/0086 →
Merger Dec 23, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034578/0236 →
Corporate Separation Jul 29, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY LIMITED
Reel/Frame 036206/0031 →
Assignment of Assignor's Interest Feb 29, 2016
From: NEC CORPORATION
To: SCIOCS COMPANY LIMITED
Reel/Frame 037852/0796 →
Assignment of Assignor's Interest Mar 2, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037869/0437 →