IP Library › Assignment 013442/0684
Patent Assignment
Reel/Frame 013442/0684

Assignment of Assignor's Interest

Recorded: 2003-02-26 Pages: 3
Assignors
HUNG, CHIH-WEI
Executed: 2003-01-03
HSU, CHENG-YUAN
Executed: 2003-01-03
SUNG, DA
Executed: 2003-01-03
Assignee
POWERCHIP SEMICONDUCTOR CORP.
NO. 12, LI-HSIN RD. I, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, TAIWAN
Covered Property (1)
Method of Manufacturing High Coupling Ratio Flash Memory Having Sidewall Spacer Floating Gate Electrode
Patent: 6,875,660 →
Application: 10/248,867 →
Publication: US 2004/0166641
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Jun 28, 2019
From: POWERCHIP SEMICONDUCTOR CORP.
To: POWERCHIP TECHNOLOGY CORPORATION
Reel/Frame 049629/0170 →
Assignment of Assignor's Interest Jul 12, 2019
From: POWERCHIP TECHNOLOGY CORPORATION
To: POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATION
Reel/Frame 049732/0121 →