IP Library Assignment 014695/0456
Patent Assignment
Reel/Frame 014695/0456

Assignment of Assignor's Interest

Recorded: 2003-11-14 Pages: 3
Assignor
NEC CORPORATION
Executed: 2003-11-12
Assignee
NEC ELECTRONIC CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA, JAPAN
Covered Property (1)
Method for Forming a Semiconductor Device That Uses a Low Resistance Tungsten Silicide Layer with a Strong Adherence to an Underlayer
Patent: 6,699,786 →
Application: 10/313,290 →
Publication: US 2003/0087521
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Dec 22, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025525/0163 →
Change of Address Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →